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We used a pulsed green laser to activate indium gallium zinc oxide thin-film transistors (IGZO TFTs). The IGZO films with large bandgaps (>3 eV) were easily activated by heat delivered by a pulsed green laser to the gate, source, and drain metal electrodes. The IGZO TFTs were quickly and selectively activated in the absence of conventional annealing. Compared to the IGZO TFTs that were annealed at 300°C, the IGZO TFTs that were activated via pulsed green laser irradiation exhibited superior electrical characteristics: a field effect mobility of 11.98 ± 0.64 cm2 V−1 s−1, a subthreshold swing of 0.33 ± 0.02 V dec−1, and an on/off ratio of 8.28 × 109 ± 7.42 × 109, which were attributable to increases in the number of metal–oxide (M-O) bonds and oxygen vacancies, and reduced levels of OH-related species. The pulsed green laser broke weak chemical M-O bonds in the IGZO films through dihydroxylation of the OH-related species, and then strengthened the residual M-O bonds via heat transfer from the metal electrodes. This new activation process could replace conventional annealing and is expected to expand the applications of flexible and transparent devices.

We present a solution-processed oxide absorption layer (SAL) for detecting visible light of long wavelengths (635 and 532 nm) for indium-gallium-zinc oxide (IGZO) phototransistors. The SALs were deposited onto sputtered IGZO using precursor solutions composed of IGZO, which have the same atomic configuration as that of the channel layer, resulting in superior interface characteristics. We artificially generated subgap states in the SAL using a low annealing temperature (200 °C), minimizing the degradation of the electrical characteristics of thin-film transistor. These subgap states improved the photoelectron generation in SALs under visible light of long wavelength despite the wide band gap of IGZO (∼3.7 eV). As a result, IGZO phototransistors with SALs have both high optical transparency and superior optoelectronic characteristics such as a high photoresponsivity of 206 A/W and photosensitivity of ∼106 under the influence of a green (532 nm) laser. Furthermore, endurance tests proved that the IGZO phototransistor with SALs can operate stably under red laser illumination switched on and off at 0.05 Hz for 7200 s.

In recent decades, oxide thin-film transistors (TFTs) have attracted a great deal of attention as a promising technology in terms of next-generation electronics due to their outstanding electrical performance. However, achieving robust electrical characteristics under various environments is a crucial challenge for successful realization of oxide-based electronic applications. To resolve the limitation, we propose a highly flexible and reliable heterogeneous organic passivation layer composed of stacked parylene-C and diketopyrrolopyrrole-polymer films for improving stability of oxide TFTs under various environments and mechanical stress. The presented multifunctional heterogeneous organic (MHO) passivation leads to high-performance oxide TFTs by: (1) improving their electrical characteristics, (2) protecting them from external reactive molecules, and (3) blocking light exposure to the oxide layer. As a result, oxide TFTs with MHO passivation exhibit outstanding stability in ambient air as well as under light illumination: the threshold voltage shift of the device is almost 0 V under severe negative bias illumination stress condition (white light of 5700 lx, gate voltage of -20 V, and drain voltage of 10.1 V for 20 000 s). Furthermore, since the MHO passivation layer exhibits high mechanical stability at a bending radius of ≤5 mm and can be deposited at room temperature, this technique is expected to be useful in the fabrication of flexible/wearable devices.

A novel organic material named ‘collodion’ was suggested as a gate insulator for amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). To find the optimized condition of the collodion gate insulator (CGI), the following three parameters of collodion solution were controlled: (1) the concentration of collodion solution; (2) the number of stacked layers; and (3) the spin-coating speed. The single-layered diluted CGI (collodion:ethanol=1:1) that was fabricated with a 3 krpm spin-coating speed exhibited an acceptable dielectric strength (J

Proposed herein is a new technique of activation for the backplane of low-temperature amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) by applying a bias voltage to gate, sou...

Activation using the simultaneous UV-thermal (U-T) treatment of sputter-processed InGaZnO (IGZO) thin-film transistors (TFTs) is suggested. This treatment was performed to lower the activation temperature from 300°C (thermal activation alone) to 150°C as well as to improve the electrical characteristics and stability. Despite the low temperature, the U-T-treated devices showed superior electrical characteristics and stability compared to the devices that were only thermally activated (300°C): the mobility improved from 5.19 ± 1.8 to 16.20 ± 1.5 cm2/Vs, the on-off ratio increased from (5.58 ± 3.21) × 108 to (2.50 ± 2.23) × 109, and the threshold voltage shift (under positive bias stress for 1000 s) decreased from 7.1 to 2.2 V. These improvements are attributed to the following two contributions: (1) generation of reactive oxygen radical at a low temperature and (2) decomposition-rearrangement of the metal oxide (MO) bonds in the IGZO active layer. Contributions (1) and (2) effectively increased the...

We suggest thermal treatment with static magnetic fields (SMFs) or rotating magnetic fields (RMFs) as a new technique for the activation of indium–gallium–zinc oxide thin-film transistors (IGZO TFTs). Magnetic interactions between metal atoms in IGZO films and oxygen atoms in air by SMFs or RMFs can be expected to enhance metal–oxide (M–O) bonds, even at low temperature (150 °C), through attraction of metal and oxygen atoms having their magnetic moments aligned in the same direction. Compared to IGZO TFTs with only thermal treatment at 300 °C, IGZO TFTs under an RMF (1150 rpm) at 150 °C show superior or comparable characteristics: field-effect mobility of 12.68 cm2 V–1 s–1, subthreshold swing of 0.37 V dec–1, and on/off ratio of 1.86 × 108. Although IGZO TFTs under an SMF (0 rpm) can be activated at 150 °C, the electrical performance is further improved in IGZO TFTs under an RMF (1150 rpm). These improvements of IGZO TFTs under an RMF (1150 rpm) are induced by increases in the number of M–O bonds due to e...

A homojunction-structured amorphous indium gallium zinc oxide (a-IGZO) phototransistor that can detect visible light is reported. The key element of this technology is an absorption layer composed of hydrogen-doped a-IGZO. This absorption layer is fabricated by simple hydrogen plasma doping, and subgap states are induced by increasing the amount of hydrogen impurities. These subgap states, which lead to a higher number of photoexcited carriers and aggravate the instability under negative bias illumination stress, enabled the detection of a wide range of visible light (400–700 nm). The optimal condition of the hydrogen-doped absorption layer (HAL) is fabricated at a hydrogen partial pressure ratio of 2%. As a result, the optimized a-IGZO phototransistor with the HAL exhibits a high photoresponsivity of 1932.6 A/W, a photosensitivity of 3.85 × 106, and a detectivity of 6.93 × 1011 Jones under 635 nm light illumination.

We fabricated wire-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using a self-formed cracked template based on a lift-off process. The electrical characteristics of wire-type IGZO TFTs could be controlled by changing the width and density of IGZO wires through varying the coating conditions of template solution or multi-stacking additional layers. The fabricated wire-type devices were applied to sensors after functionalizing the surface. The wire-type pH sensor showed a sensitivity of 45.4 mV/pH, and this value was an improved sensitivity compared with that of the film-type device (27.6 mV/pH). Similarly, when the wire-type device was used as a glucose sensor, it showed more variation in electrical characteristics than the film-type device. The improved sensing properties resulted from the large surface area of the wire-type device compared with that of the film-type device. In addition, we fabricated wire-type IGZO TFTs on flexible substrates and confirmed that such structures were very resistant to mechanical stresses at a bending radius of 10 mm.

Carbon nanotubes, in different forms and architectures, have demonstrated good promise as electrode material for Li-ion batteries, owing to large surface area, shorter Li-conduction distance and high electrical conductivity. However, practical application of such Li-ion batteries demands higher volumetric capacity, which is otherwise low for most nanomaterials, used as electrodes. In order to address this urgent issue, we have developed a novel 3-dimensional (3D) anode, based on multiwall carbon nanotubes (MWCNTs), for Li-ion batteries. The unique 3D design of the electrode allowed much higher solid loading of active anode material, MWCNTs in this case and resulted in more amount of Li + ion intake in comparison to those of conventional 2D Cu current collector. Though one such 3D anode was demonstrated to offer 50% higher capacity, compared to its 2D counterpart, its ability to deliver much higher capacity, by geometrical modification, is presented. Furthermore, deposition of amorphous Si (a-Si) layer on the 3D electrode (a-Si/MWCNTs hybrid structure) offered enhancement in electrochemical response. Correlation between electrochemical performances and structural properties of the 3D anodes highlights the possible charge transfer mechanism.

The purpose of this study was to investigate the changes of the nanostructured surface of Ti–35Ta–xZr alloys for dental application resulting from changes in anodization factors. TiO 2 nanotubes were formed on Ti–35Ta–xZr alloys by anodization in H 3 PO 4 -containing NaF solutions. Anodization was carried out using a scanning potentiostat. Microstructures of the alloys were examined by optical microscopy (OM), field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). Microstructures of the Ti–35Ta–xZr alloys were changed from α" phase to β phase, and morphologies changed from a needle-like to an equiaxed structure, with increasing Zr content. As the Zr content increased from 3 to 7 to 15 wt.%, the average thickness of the TiO 2 nanotubes increased from 4.5 μm to 6.1 μm to 9.0 μm. When the anodizing potential was increased from 3 V to 10 V, the thickness of the nanotube layers increased from about 0.5 μm to 9.5 μm. As the anodization time increased from 30 min to 180 min at 10 V, the nanotube thickness increased from 4 μm to 9.5 μm. The amorphous oxide phase in the nanotubes transformed to anatase and rutile phases of TiO 2 by heat treatment above 300 °C.

In order to investigate the nanostructures and corrosion behaviors of Ti-Zr alloys, nanotube formed Ti-Zr(10%, 20%, 30% and 40% in mass fraction) alloys were prepared by arc melting and the condition of controlling nanostructure was at 1 000 �� for 24 h in argon atmosphere; formation of nanotubes was conducted by anodizing a Ti-Zr alloy in H3PO4 electrolyte with a small amount of fluoride ions at room temperature. The corrosion properties of specimens were examined through potentiodynamic test (potential range of I1 500I2 000 mV) in 0.9% NaCl solution by using potentiostat. Microstructures of the alloys were observed by optical microscope(OM), field emission scanning electron microscope(FE-SEM) and X-ray diffractometer(XRD). Diameter of nanotube does not depend on Zr content, but interspace of nanotube predominantly depends on Zr content, which confirms that ZrO2 oxides play a role to increase the interspace of nanotube formed on the surface.

Nanotube morphology changes in Ti–Zr alloys as Zr content increases have been investigated. Ti–Zr (10, 20, 30 and 40 wt.%) alloys were prepared by arc melting and heat treated for 24 h at 1000 °C in an argon atmosphere. TiO2 nanotubes were formed on the Ti–Zr alloys by anodization in H3PO4 containing 0.5 wt.% NaF. Electrochemical experiments were performed using a conventional three-electrode configuration with a platinum counter electrode and a saturated calomel reference electrode. Samples were embedded in epoxy resin, leaving an area of 10 mm2 exposed to the electrolyte. Anodization was carried out using a scanning potentiostat, and all experiments were conducted at room temperature. Microstructures of the alloys were examined by optical microscopy (OM), field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The Ti–Zr alloy microstructures observed by OM and FE-SEM changed from a lamellar structure to a needle-like structure with increasing Zr content. The microstructures also changed from β phase to increasing amounts of α phase as the Zr content increased. The number of large nanotubes formed by anodization decreased, and the number of small nanotubes increased, as the Zr content increased. The mean inner diameter ranged from approximately 150 to 200 nm with a tube-wall thickness of about 20 nm. The interspace between the nanotubes was approximately 60, 70, 100 and 130 nm for Zr contents of 10, 20, 30 and 40 wt.%, respectively.

This study was performed to examine the effects of electron beam irradiation on volatile flavor components of Shingo pear (Pyrus pyrifolia cv. Niitaka) and on their changes according to storing period following irradiation. Volatile flavor components in pear were extracted using simultaneous steam distillation and extraction (SDE) apparatus and analyzed by GC/MS. 46 components were identified in control whereas 45, 44, 48 and 51 components were identified in irradiated samples by electron beam at 0.25, 0.5, 1, and 3 kGy, respectively. Hexanal, n-hexanol, and (E)-2-hexenal were identified as the major volatile flavor components of all samples. The characteristic volatile flavor components of irradiated pear by electron beam were similar to those of control, and their effects depending on irradiation source were not different. In addition, there was no noticeable change in volatile flavor components of pear with storage at 4 o C for 30 days or with irradiation. Sensory evaluation indicated that the consumer receptiveness tended to be higher at a low level of radiation dose under 1 kGy than control, albeit not significant. Therefore, electron beam irradiation at low level of radiation dose under 1 kGy could be considered as an effective method to exterminate vermin and thus to improve the shelf-stability of pear without deterioration.

We investigated various approaches to enhance the electrical performance and stability of oxide thin-film transistors (TFTs) fabricated with vacuum- and solution-process: vertically graded oxygen vacancy active layer (VGA) by control of oxygen partial pressure, sequential pressure annealing (SPA), and hydrogen peroxide activation (HPA) using ultraviolet irradiation. By adopting these techniques, we could effectively control the defect densities in active layer which resulted in high performance and stable oxide TFTs.

Titanium and its alloys are widely used as a dental implant material in clinical dentistry and as an orthopedic implant materials due to their good mechanical properties, corrosion resistance, and biocompatibility. In this study, nanotubular oxide surface and layer formed on the Ti-35Ta-xZr alloys for biomaterials have been investigated by using electrochemical methods. Ti-35Ta-xZr alloys were prepared by arc melting and heat treated for 24 hr at 1000 degrees C in argon atmosphere, and then water quenching. Ti oxide nanotubes were formed on the Ti-35Ta-xZr alloys by anodizing in H3PO4 containing 0.8 wt% NaF solution at 25 degrees C. Anodization was carried out using a scanning potentiostat. Microstructures of the alloys and nanotube surface were examined by FE-SEM, EDX, and XRD. Crystallization treatment of nanotube surface was carried out for 3 hr at 450 degrees C. Microstructures of the Ti-35Ta-xZr alloys were changed from beta phase to alpha'' phase, and changed from an equiaxed to a needle-like structure with increasing Zr content. Nanotubular oxide surface and layers consisting of highly ordered nanotubes with a wide range of diameters (approximately 150-200 nm) and lengths (approximately 4-10 microm) can be formed on alloys in the Ti-35Ta-xZr alloys with Zr content. As the Zr content increased from 3% to 15%, length of step between the bamboo knob-like had increasing values of approximately 50 nm, 80 nm, and 140 nm, respectively. The nanotubes formed on the Ti-35Ta-xZr alloy surface were amorphous structure before heat treatment, but oxide surface had mainly an anatase structure by heat treatment.

In this study, the electrochemical behavior of nano and femtosecond laser textured titanium alloy for implant surface modification has been researched using the potentiostat equipment. Cp-Ti and Ti-6Al-4V alloy, located on X-Y motorized stage, were irradiated using femtosecond laser. The corrosion properties were examined by a potentiodynamic and AC impedance test.