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Nowadays, digital circuits use both serial and parallel data transmission. It is important to ensure compatibility between them. The key component for that is the code converter, which can, without proper frequency specifications, be the “bottleneck” of the whole system. High data transmission density implies increasing of digital signal frequency. Thus, circuits for high frequency applications face high requirements. The siliconbased technologies often concede in terms of frequency capabilities. Using GaAs-based pHEMTs is one of the possible ways to overcome this. It might be useful for logic circuits in which data transfer speed and early decisions are crucial. In this paper, the serial-to-parallel code converter using GaAs pHEMT 0.5 μm technology is presented.

The article presents the results of the development and measurements of a specialized integrated circuit of an instrumentation amplifier (IA) with indirect negative current feedback. The schematic and the measurement results of the main characteristics for a silicon-on-insulator metal-oxide-semiconductor instrumentation amplifier are presented. The amplifier is intended for use as a part of a sensor network for monitoring the state of high-temperature objects. The temperature range of the instrumentation amplifier is up to 200 °C. Instrumentation amplifier has 11.8 MHz gain bandwidth product with a 3.3 V supply voltage. The measured gain is 27.50 dB and the error in setting the gain was 0.27 dB, the 3 dB bandwidth is 500 kHz.