1. The 2020 UV emitter roadmap
- Author
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Biplab Sarkar, Ferdinand Scholz, Yuewei Zhang, Friedhard Römer, Hideki Hirayama, Luca Sulmoni, Yukio Kashima, Mitsuru Funato, Ryota Ishii, Robert W. Martin, Philip A. Shields, Akira Hirano, Tim Wernicke, Siddharth Rajan, Michael Kneissl, Yoichi Kawakami, Abdallah Ougazzaden, Peter J. Parbrook, Zlatko Sitar, Pramod Reddy, Ramon Collazo, Matteo Meneghini, Johannes Glaab, Carlo De Santi, Frank Mehnke, Ronny Kirste, Hiroshi Amano, Yuh-Renn Wu, Thomas Wunderer, Tao Wang, Markus Weyers, Sven Einfeldt, Leo J. Schowalter, Jan Ruschel, Bernd Witzigmann, Sylvia Hagedorn, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), CRC 787, and DFG
- Subjects
Ultraviolet radiation ,AlGaN ,InGaN ,light emitting diodes ,ultraviolet ,UV-LED ,Materials science ,Acoustics and Ultrasonics ,Band gap ,02 engineering and technology ,Electroluminescence ,medicine.disease_cause ,7. Clean energy ,01 natural sciences ,Lumineszenzdiode ,law.invention ,[SPI]Engineering Sciences [physics] ,law ,0103 physical sciences ,medicine ,ddc:530 ,QC ,Ultraviolet ,Diode ,Common emitter ,010302 applied physics ,business.industry ,DDC 530 / Physics ,Ultraviolett ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Laser ,Light emitting diodes ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Optoelectronics ,Direct and indirect band gaps ,0210 nano-technology ,business ,Light-emitting diode - Abstract
Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm—due to its large and tuneable direct band gap, n- and p-doping capability up to the largest bandgap material AlN and a growth and fabrication technology compatible with the current visible InGaN-based LED production. However AlGaN based UV-emitters still suffer from numerous challenges compared to their visible counterparts that become most obvious by consideration of their light output power, operation voltage and long term stability. Most of these challenges are related to the large bandgap of the materials. However, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance of UV emitters to be pushed far beyond the current state. One example is the very recent realization of edge emitting laser diodes emitting in the UVC at 271.8 nm and in the UVB spectral range at 298 nm. This roadmap summarizes the current state of the art for the most important aspects of UV emitters, their challenges and provides an outlook for future developments., publishedVersion
- Published
- 2020