1. MoS 2 Nanoribbon Transistor for Logic Electronics.
- Author
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Duan, Xinpei, Yang, Zhenyu, Lin, Jun, Huang, Hao, Li, Guoli, Wan, Da, Zou, Xuming, Bai, Jingwei, Miao, Jinshui, Liao, Lei, and Liu, Xingqiang
- Subjects
LOGIC circuits ,NAND gates ,ELECTRONIC materials ,LOGIC ,TRANSISTORS - Abstract
Tailoring MoS2 into nanoribbon (NR) provides an efficient regulation of the electrical property. Herein, high-performance MoS2 transistors are fabricated by optimizing the channel height, width, and length. The electrical performance of the device is improved due to enhanced gate modulation capability from the quasi-3D channel geometry. The devices obtain a high ON-state current of $496 ~\mu \text{A}\,\cdot \, \mu \text{m}$ −1 while offering appropriate field-effect mobility of 52.6 cm2V−1s−1 as the height and width of MoS2 NR are fixed to 20 ± 3 nm and 130 ± 10 nm, respectively. The high performance and desirable current saturation are promising to construct robust logic gates. The NOT and NAND gates are assembled based on an individual MoS2 NR. The inverters demonstrate a voltage gain of −17.8 and a total noise margin of nearly 75%. This work provides an alternative strategy to fully take the advantage of 2-D materials in logic electronics circuits. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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