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In this paper, the relation between the surface electric field and the temperature distribution dependence on the drift-region doping concentration in a 30-V asymmetric drain-extended MOSFET is studied. For the case of high drift-region concentration, the drain resistance is low, and the current density is high, which induces a high nonuniform temperature distribution in the transistor, which in turn reduces the carrier mobility and causes a negative drain resistance. For the case of low drift-region concentration, a uniform temperature distribution is obtained. However, the different drift-region concentration changes the location of the maximum temperature from the gate-overlapped drift region for the high concentration case to the drain-side contact region for the low concentration case under the high VGS and VDS conditions. Therefore, the self-heating effect is also changed by the redistribution of the electric field in the drift region. [ABSTRACT FROM AUTHOR]

This paper presents, for the first time, the study of the application of a lateral diffused metal–oxide–semiconductor field-effect transistor (LDMOSFET) in a common-gate configuration to radio-frequency (RF) transmit/receive (T/R) switching circuits. A single-pole double-throw (SPDT) 900-MHz T/R switch is implemented using 0.25-\mu\m LDMOSFET foundry technology. Measured results show that our switching circuit can achieve a low insertion loss of 0.82 dB and a high power handling capability of 27 dBm. This result is promising in integrating power management integrated circuits, RF power amplifiers, and switching circuits in a single chip, based on LDMOSFET technology, to realize an RF transmit front-end system-on-chip solution. [ABSTRACT FROM AUTHOR]