19 results on '"Aissat, A."'
Search Results
2. Study of Graded Ultrathin CIGS/Si Structure for Solar Cell Applications
- Author
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Boubakeur, M., Aissat, A., Vilcot, J. P., Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zhang, Junjie James, Series Editor, Hajji, Bekkay, editor, Mellit, Adel, editor, Marco Tina, Giuseppe, editor, Rabhi, Abdelhamid, editor, Launay, Jerome, editor, and Naimi, Salah Eddine, editor
- Published
- 2021
- Full Text
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3. Bandgap energy modeling of the deformed ternary GaAs1-uNu by artificial neural networks
- Author
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A. Tarbi, T. Chtouki, Y. Elkouari, H. Erguig, A. Migalska-Zalas, and A. Aissat
- Subjects
Materials ,N-III-V semiconductor ,Bandgap energy ,Optoelectronic ,Sensors ,Science (General) ,Q1-390 ,Social sciences (General) ,H1-99 - Abstract
Appraising the bandgap energy of materials is a major issue in the field of band engineering. To better understand the behavior of GaAs1-uNu material, it is necessary to improve the applied calculation methodologies. The band anticrossing model (BAC) allows modeling of the bandgap energy when diluted nitrogen is incorporated into the material. The model can be improved using artificial neural networks (ANN) as an alternative solution, which is rarely applied. Our goal is to study the efficiency of the (ANN) method to gauge the bandgap energy of the material from experimental measurements, considering the extensive strain due to the lattice mismatch between the substrate and the material. This makes the GaAsN material controllable with (ANN) method, and is a potential candidate for the fabrication of ultrafast optical sensors.
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- 2022
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4. Theoretical Study of Quantum Well GaAsP(N)/GaP Structures for Solar Cells
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Chenini, L., Aissat, A., Öchsner, Andreas, Series Editor, da Silva, Lucas F. M., Series Editor, Altenbach, Holm, Series Editor, Mellit, Adel, editor, and Benghanem, Mohamed, editor
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- 2020
- Full Text
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5. Optimization by simulation for photovoltaic applications of the quaternary semiconductor InGaAsP epitaxed on InP substrate
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Tarbi, A., Chtouki, T., Benahmed, A., Sellam, M. A., Elkouari, Y., Erguig, H., Migalska-Zalas, A., and Aissat, A.
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- 2021
- Full Text
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6. Study of Graded Ultrathin CIGS/Si Structure for Solar Cell Applications
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J.P. Vilcot, Manel Boubakeur, Abdelkader Aissat, Laboratoire de Traitement de Signal et Imagerie [Blida] (LATSI), Université de Saâd Dahlab [Blida] (USDB ), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Optoélectronique - IEMN (OPTO - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Université Saâd Dahlab Blida 1 (UB1)
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Yield (engineering) ,Materials science ,Band gap ,chemistry.chemical_element ,Context (language use) ,02 engineering and technology ,7. Clean energy ,01 natural sciences ,law.invention ,[SPI]Engineering Sciences [physics] ,law ,0103 physical sciences ,Solar cell ,Gallium ,Materials ,ComputingMilieux_MISCELLANEOUS ,Ultrathin CIGS ,Bandgap gradient ,010302 applied physics ,business.industry ,Energy conversion efficiency ,021001 nanoscience & nanotechnology ,Copper indium gallium selenide solar cells ,chemistry ,Optoelectronics ,Thickness ,0210 nano-technology ,business ,Layer (electronics) - Abstract
International audience; This paper aims to improve the performance of graded ultrathin CIGS-based solar cells using the one-dimensional simulation program (SCAPS-1D). In this context, we have assessed the effect of the graded bandgap and the thickness of the absorber layer (CIGS) on solar cell performance. We have also examined the impact of different graded bandgap profiles by varying the gallium concentration. Notably, the increase of the gallium concentration (xGa) and the CIGS thickness (dCIGS) have degraded the conversion efficiency η. The optimization of these parameters gives a considerable solar yield when dCIGS = 1 μm and xGa in the range 0.1–0.3. For the graded cell, we have mentioned that the double-graded profile improves significantly the conversion efficiency up to 22.21% compared to the uniform profile with η = 21.43%.
- Published
- 2020
7. Efficiency improvement of thin film CuIn1-xGaxSe2 structure for solar cells applications.
- Author
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Benahmed, A., Aissat, A., Ayachi, B., Sfina, N., Saidi, F., and Vilcot, J.P.
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SOLAR cells , *PHOTOVOLTAIC power systems , *THIN films , *SOLAR cell efficiency , *QUANTUM efficiency , *OPTICAL properties - Abstract
In this paper, the CuInGaSe 2 based solar cell optimization has been established. We have simulated the structural strain effect. The effect of gallium concentration on the optical properties and the quantum external efficiency EQE was investigated. We also optimized the concentration x at low defect densities. The optimal gallium concentration is 0.30. We obtained an efficiency of the CuIn 0.70 Ga 0.30 Se 2 absorber solar cell around 24% with a strain ɛ = 0.64% and material defects densities equal to 1.2x1015cm−3. This work has been validated by theoretical and experimental studies. This study allows us to find a compromise between concentration x and defect concentrations in order to improve the performance and high efficiency of the solar cell. • The effect of structural deformation has been studied and simulated. • The effect of gallium on the optical properties and EQE was investigated. • We optimized the x concentration at low defect concentrations. • An efficiency of the solar cell which is equal to 24% with ɛ = 0.6% was obtained. • This work is validated by a theoretical and experimental study. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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8. Improvement in the efficiency of solar cells based on the ZnSnN2/Si structure.
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Aissat, A., Chenini, L., Laidouci, A., Nacer, S., and Vilcot, J.P.
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PHOTOVOLTAIC power systems , *SOLAR cell efficiency , *OPEN-circuit voltage , *REFLECTANCE , *SOLAR spectra , *ABSORPTION coefficients - Abstract
This study aims to investigate the different optical properties of the ZnSnN 2 absorber layer such as absorption, reflection and transmission coefficients. The effects of the ZnSnN 2 absorber layer thickness, temperature,and defect density on electrical parameters such as short circuit current density, open circuit voltage, fill factor and efficiency have also been studied in detail. These factors play an important role in the performance of the ZnO/CdS/ZnSnN 2 /Si/Mo structure. The highest efficiency of about 23.32 % is achieved without defects in the ZnSnN 2 absorber layer, under the 1-sun AM1.5 solar spectrum, by applying the flat band condition and considering the strain values of 0.37 % (ZnSnN 2 /Cds) and 7.17 % (ZnSnN 2 /Si). In addition to high efficiency, the ZnSnN 2 has a high absorption coefficient. This device will play a crucial role in optoelectronic applications. This structure is a promising candidate for low cost and high efficiency photovoltaic technology. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF
9. Performance of the structure AlxGa1-xAs1-yNy/Ge for solar cell applications
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J.P. Vilcot, W. Bellil, Abdelkader Aissat, Laboratoire de Traitement de Signal et Imagerie [Blida] (LATSI), Université de Saâd Dahlab [Blida] (USDB ), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Optoélectronique - IEMN (OPTO - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Université Saâd Dahlab Blida 1 (UB1)
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Electron mobility ,Yield (engineering) ,Materials science ,Band gap ,chemistry.chemical_element ,02 engineering and technology ,01 natural sciences ,7. Clean energy ,law.invention ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Modeling and simulation ,Stress (mechanics) ,[SPI]Engineering Sciences [physics] ,AlxGa1-xAs1-yNy/Ge ,Aluminium ,law ,0103 physical sciences ,Solar cell ,Electrical and Electronic Engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Absorption (electromagnetic radiation) ,Materials ,ComputingMilieux_MISCELLANEOUS ,010302 applied physics ,business.industry ,021001 nanoscience & nanotechnology ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Detection ,chemistry ,Optoelectronics ,0210 nano-technology ,business - Abstract
International audience; The aim of this modeling and simulation is to study the influence of the incorporation of nitrogen (N) and aluminum (Al) on the optoelectronic properties of the structure AlxGa1-xAs1-yNy/Ge, and then choose the right combination (N, Al) which gives us a better conversational efficiency of the junction(AlxGa1-xAs1-yNy/Ge), in this study, we simulated the effect of N and Al on the strain, the band gap, carrier mobility and structure efficiency where we based on theoretical models experimentally validate, It has been shown that the Al concentration slightly affects the stress and the band gap, but it has a significant influence on the incorporation of nitrogen and in a more homogeneous way introducing a dramatic decrease in the band gap what change considerably the absorption, carrier mobility and final yield of the structure
- Published
- 2018
10. Development of InxGa1-xN/GaN axial multiple quantum well nanowire for solar cell applications
- Author
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Abdelkader Aissat, J.P. Vilcot, Laboratoire de Traitement de Signal et Imagerie [Blida] (LATSI), Université Saâd Dahlab Blida 1 (UB1), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Optoélectronique - IEMN (OPTO - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Université de Saâd Dahlab [Blida] (USDB )
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Materials science ,Proton ,Nanowire ,chemistry.chemical_element ,Context (language use) ,02 engineering and technology ,01 natural sciences ,7. Clean energy ,[SPI.MAT]Engineering Sciences [physics]/Materials ,law.invention ,010309 optics ,[SPI]Engineering Sciences [physics] ,law ,0103 physical sciences ,Solar cell ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Electrical and Electronic Engineering ,Polarization (electrochemistry) ,Materials ,ComputingMilieux_MISCELLANEOUS ,business.industry ,Radius ,Nanowiresolar cells ,021001 nanoscience & nanotechnology ,Atomic and Molecular Physics, and Optics ,Nanostructures ,Electronic, Optical and Magnetic Materials ,chemistry ,Optoelectronics ,Development (differential geometry) ,0210 nano-technology ,business ,optoelectronic ,Indium - Abstract
International audience; In this paper, we report a simulation and investigation of a single InxGa1-xN/GaN axial multiple quantum well nanowire (MQWNW) solar cell of radius r = 190 nm and a length of L = 1165 nm. Our results have been shown that 15 In0.15Ga0.85N (QW) /GaN (barrier) periods is the maximum number that our structure can be supported with an optimal efficiency of about 1.65% achieved with ε = 1.5%. The insertion of MQWs in nanowire permits the growth of InxGa1-xN MQWs with high indium concentration of about 50% and ε = 5%. At this indium concentration, the optimal efficiency obtained was 1.70%. Moreover; the structure has been studied with respect to the nanowire radius. In this context, we have shown that the efficiency enhancement achieved through the increase of radius is attributed to the increase of photo-carriers. Study of polarization and proton irradiations has indicated the negative effect of polarization on structure performances and high resistance of III-N semiconductor materials against the radiations, respectively. From these novel structures we can improve solar cell performance for new applications.
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- 2020
11. Electrical simulation and optimization of organic photovoltaic cells based PTB7: PC70BM.
- Author
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Bensenouci, S., Rahmoun, K., and Aissat, A.
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PHOTOVOLTAIC cells , *CHARGE carrier mobility , *SOLAR cells , *HYBRID materials , *PHOTOVOLTAIC power systems - Abstract
This work presents electrical simulations and the optimization of the device structure ITO/PEDOT:PSS/PTB7:PC70BM/Al, using OghmaNano (Organic and hybrid Material Nano) software. The result analysis was given at different layer thickness and the best performance characteristics are obtained at 250 nm of the active layer. Then, the simulated results of different parameters such as charge carrier mobility, temperature and series resistance are investigated. Different structures of organic solar cells, the role of the interface layer used as a hole transport layer and the effect of electrodes are discussed. Finally, the energy level of the device is explained by the optical simulation and the optimized solar cell was proposed. [ABSTRACT FROM AUTHOR]
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- 2024
- Full Text
- View/download PDF
12. Modeling and optimization of CuIn1-xGaxSe2/Si1-yGey structure for solar cells applications.
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Boubakeur, M., Aissat, A., Chenini, L., Ben Arbia, M., Maaref, H., and Vilcot, J.P.
- Subjects
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PHOTOVOLTAIC power systems , *SOLAR cells , *COPPER indium selenide , *SOLAR cell efficiency , *OPEN-circuit voltage , *QUANTUM efficiency - Abstract
A combination of a Copper Indium Gallium Selenide (CIGS) and Silicon (Si) layer has been recognized as an excellent choice for producing heterojunction based solar cells with improved efficiency and low cost processing techniques. The quaternary compound CIGS and silicon (Si) regions exhibit a lattice mismatch of about 5%, which induces a strain and impacts the electronic characteristics of the CIGS/Si heterojunction solar cell. A new viewpoint suggests the integration of a silicon germanium (Si 1-y Ge y) layer in the CIGS/Si region to reduce the impact of lattice mismatch. The objective of this study is to investigate how different gallium and germanium concentrations (x Ga and y Ge) affect the following factors: lattice mismatch (ε) , critical thickness (h c) and absorption coefficient (α)of CIGS/SiGe based solar cells. It also aims to analyze how these concentrations impact the primary parameters used to evaluate solar cell performance such as external quantum efficiency, short circuit current density, fill factor, open circuit voltage and conversion efficiency. The simulation results agree well with the existing theoretical and experimental literature data, confirming the suitability of the physical characteristics employed in this numerical study. By tuning the concentrations of Gallium and Germanium, it is feasible to attain an efficiency of 24% owing to the lattice compensation phenomenon in Si 1-y Ge y layers. These findings hold significant implications for the development and advancement of solar cell technology, as well as for enhancing their conversion efficiency and commercialization. • A strain-compensated CIGS/Si structure was achieved by adding SiGe layer. • The incorporation of SiGe improves the absorbance and EQE of the CIGS solar cell. • The improvement of the solar performances of the CIGS is ensured by the SiGe layer. • Optimizing Ga, Ge concentrations makes it possible to achieve an efficiency of 24%. [ABSTRACT FROM AUTHOR]
- Published
- 2023
- Full Text
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13. Performance of the structure AlxGa1-xAs1-yNy/Ge for solar cell applications.
- Author
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Bellil, W., Aissat, A., and Vilcot, J.P.
- Subjects
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SOLAR cells , *NITROGEN , *ALUMINUM , *OPTOELECTRONICS , *BAND gaps - Abstract
The aim of this modeling and simulation is to study the influence of the incorporation of nitrogen (N) and aluminum (Al) on the optoelectronic properties of the structure Al x Ga 1-x As 1-y N y /Ge, and then choose the right combination (N, Al) which gives us a better conversational efficiency of the junction(Al x Ga 1-x As 1-y N y /Ge), in this study, we simulated the effect of N and Al on the strain, the band gap, carrier mobility and structure efficiency where we based on theoretical models experimentally validate, It has been shown that the Al concentration slightly affects the stress and the band gap, but it has a significant influence on the incorporation of nitrogen and in a more homogeneous way introducing a dramatic decrease in the band gap what change considerably the absorption, carrier mobility and final yield of the structure. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
- View/download PDF
14. Effect of antimony on structure strained quantum well laser
- Author
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Aissat, A., Ykhlef, F., Nacer, S., Jean-Pierre VILCOT, Laboratoire de Traitement de Signal et Imagerie [Blida] (LATSI), Université Saâd Dahlab Blida 1 (UB1), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Université de Saâd Dahlab [Blida] (USDB )
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Component ,Condensed Matter::Materials Science ,[SPI]Engineering Sciences [physics] ,Laser ,Quantum well ,Materials - Abstract
This work consists of highly strained quantum well GaxIn1-xNyAs1-y-zSbz quaternary structure modeling. We have studied the effect nitrogen and antimony incorporation into ternary semiconductor III-V alloys. We found that incorporating nitrogen in the structure leads to a splitting of the conduction band into two sub bands while adding antimony will split the valence band. This separation will give a reduced a band gap energy which is interesting for getting a 1.55µm wavelength optical fiber window. We have also studied the effect of strain on the band structure and particularly on the conduction band. We have calculated the x(Ga), y(N) and z(Sb) concentrations taking into account the effects of the strain, the temperature and the quantum well width.
- Published
- 2013
15. Electrical properties of InAsP/Si quantum dot solar cell.
- Author
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Benyettou, F., Aissat, A., Djebari, M., and Vilcot, J.P.
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QUANTUM dots , *SOLAR cells , *PHOTOVOLTAIC power systems , *ABSORPTION , *SEMICONDUCTORS - Abstract
The electrical properties of InAsP/Si quantum dot solar cell (QDSC) are numerically studied and analyzed in this paper. Many effects like number of quantum dot (QD) layers inserted and Arsenic content of InAs x P 1-x on photovoltaic properties such as current density-voltage J-V and the external quantum efficiency (EQE) are investigated. Our results have been shown that the optimal Arsenic content is 0.6. With 30 InAsP/Si QDs layers, relative enhancements of about 7% and 6.70% of short-circuit current and efficiency are achieved, respectively. Otherwise, the absorption range edge of low energy photons was extended from 1120 to 1200 nm. This reveals that introduction of QDs in the intrinsic region of p -i- n Silicon (Si) solar cell enhances significantly the device characteristics beyond what has been reported for conventional semiconductor-based solar cells. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
- View/download PDF
16. Modeling and optimization of CdS/CuIn1−xGaxSe2 structure for solar cells applications.
- Author
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Arbouz, H., Aissat, A., and Vilcot, J.P.
- Subjects
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SOLAR cells , *CADMIUM sulfide , *COPPER indium selenide , *BAND gaps , *PHOTONS , *GALLIUM , *PHOTOVOLTAIC power generation - Abstract
This work deals with the modeling and optimization of the CuInGaSe/CdS based structure for photovoltaic applications. We took into consideration the effect of the gallium concentration and the temperature on the strain, band gap energy, absorption and efficiency of the structure. It has been demonstrated that increasing the gallium concentration increases the ban gap energy, while increasing temperature decreases it. These two parameters vary the efficiency significantly. For x = 30% and T = 300 K, the band gap energy is equal to 1.15 eV with a deformation of 0.5% and efficiency around 20%. We have also found that at this value of the band gap energy the structure absorbs most of the incident photons. Then to achieve a reliable cell based on CuInGaSe/CdS it is adequate to find a compromise between the gallium concentration in the alloy, the temperature and the strain. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF
17. Theoretical investigation of GaAsNBi/GaAs materials for optoelectronic applications.
- Author
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Aissat, A., Alshehri, B., Nacer, S., and Vilcot, J.P.
- Subjects
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GALLIUM arsenide nitride , *OPTOELECTRONIC devices , *PHASE transitions , *BAND gaps , *BISMUTH compounds - Abstract
In this paper, we report a theoretical investigation of bandgap properties of GaAsNBi based materials on GaAs substrates. We look at the influence of nitrogen (N) and bismuth (Bi) concentrations on the position of conduction and valence bands; and we show that a split of the conduction band can take place with the incorporation of N at 5% under level, while a split of the valence band of both heavy and light holes sub-bands takes place after the incorporation of Bi at 14% under level. In order to compute the transition energies, we used the VBCA k.p 16×16 model. The N and Bi concentrations effects as well as the lattice mismatch value have also been taken into account. For a couple of N and Bi concentrations of 3% and 6%, we found strained gap energy around 0.68 eV. Furthermore, we have also shown that the absorption coefficient increases significantly when the N and Bi concentrations increase. [ABSTRACT FROM AUTHOR]
- Published
- 2015
- Full Text
- View/download PDF
18. Development of InxGa1-xN/GaN axial multiple quantum well nanowire for solar cell applications.
- Author
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Aissat, A. and Vilcot, J.P.
- Subjects
- *
SOLAR cells , *SILICON solar cells , *SEMICONDUCTOR materials , *QUANTUM wells , *SILICON nanowires , *INDIUM - Abstract
In this paper, we report a simulation and investigation of a single In x Ga 1-x N/GaN axial multiple quantum well nanowire (MQWNW) solar cell of radius r = 190 nm and a length of L = 1165 nm. Our results have been shown that 15 In 0.15 Ga 0.85 N (QW) /GaN (barrier) periods is the maximum number that our structure can be supported with an optimal efficiency of about 1.65% achieved with ε = 1.5%. The insertion of MQWs in nanowire permits the growth of In x Ga 1-x N MQWs with high indium concentration of about 50% and ε = 5%. At this indium concentration, the optimal efficiency obtained was 1.70%. Moreover; the structure has been studied with respect to the nanowire radius. In this context, we have shown that the efficiency enhancement achieved through the increase of radius is attributed to the increase of photo-carriers. Study of polarization and proton irradiations has indicated the negative effect of polarization on structure performances and high resistance of III-N semiconductor materials against the radiations, respectively. From these novel structures we can improve solar cell performance for new applications. [ABSTRACT FROM AUTHOR]
- Published
- 2020
- Full Text
- View/download PDF
19. Enhancement of the efficiency of ultra-thin CIGS/Si structure for solar cell applications.
- Author
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Boubakeur, M., Aissat, A., Ben Arbia, M., Maaref, H., and Vilcot, J.P.
- Subjects
- *
SILICON solar cells , *SOLAR cells , *CELL anatomy , *REFLECTANCE , *SIMULATION software , *BAND gaps - Abstract
This paper describes a numerical study of ultrathin CIGS solar cell using the one-dimensional simulation program. The various properties of the absorber layer such as the band gap energy, the absorption coefficient, and the reflection coefficient are investigated. In addition, the impact of adding silicon to reduce the thickness of CIGS is also examined. We have carried out a theoretical study to show the influence of the thickness and the gallium concentration of the CIGS absorber layer on the performance of the Mo/Si/CIGS/ZnS/ZnO structure. It has been demonstrated that increasing x Ga and d CIGS affect the conversion efficiency, FF, V oc, and J sc. Finally, we have achieved a conversion efficiency η = 21.08% with an optimal value of gallium content equal to 20%when the thickness of the absorber layer has been reduced to 0.75 μm. This study allowed us to improve the performance of thin film solar cell. • The impact of material properties on solar cell performance. • The effect of Ga content and CIGS thickness on the conversion efficiency. • Ultrathin CIGS solar cell performance when adding a silicon layer. • The influence of defects and R s on the different electrical parameters. [ABSTRACT FROM AUTHOR]
- Published
- 2020
- Full Text
- View/download PDF
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