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The downscaling of nonlinear optical devices is significantly hindered by the inherently weak nonlinearity in regular materials. Here, we report a giant third-harmonic generation discovered in epitaxial thin films of V-VI chalcogenide topological insulators. Using a tailored substrate and capping layer, a single reflection from a 13 nm film can produce a nonlinear conversion efficiency of nearly 0.01%, a performance that rivals micron-scale waveguides made from conventional materials or metasurfaces with far more complex structures. Such strong nonlinear optical emission, absent from the topologically trivial member in the same compound family, is found to be generated by the same bulk band characteristics that are responsible for producing the band inversion and the nontrivial topological ordering. This finding reveals the possibility of obtaining superior optical nonlinearity by examining the large pool of newly discovered topological materials with similar band characteristics.

Delafossites are promising candidates for photocatalysis applications because of their chemical stability and absorption in the solar region of the electromagnetic spectrum. For example, CuAlO2 has...

Solar-driven production of renewable energy (e.g., H2) has been investigated for decades. To date, the applications are limited by low efficiency due to rapid charge recombination (both radiative and nonradiative modes) and slow reaction rates. Tremendous efforts have been focused on reducing the radiative recombination and enhancing the interfacial charge transfer by engineering the geometric and electronic structure of the photocatalysts. However, fine-tuning of nonradiative recombination processes and optimization of target reaction paths still lack effective control. Here we show that minimizing the nonradiative relaxation and the adsorption energy of photogenerated surface-adsorbed hydrogen atoms are essential to achieve a longer lifetime of the charge carriers and a faster reaction rate, respectively. Such control results in a 16-fold enhancement in photocatalytic H2 evolution and a 15-fold increase in photocurrent of the crystalline g-C3N4 compared to that of the amorphous g-C3N4.

Aspects of the optoelectronic performance of thin-film ferromagnetic materials are evaluated for application in ultrafast devices. Dynamics of photocarriers and their associated spin polarization are measured using transient reflectivity (TR) measurements in cross linear and circular polarization configurations for La0.7Sr0.3MnO3 films with a range of thicknesses. Three spin-related recombination mechanisms have been observed for thicker films (thickness of d ≥ 20 nm) at different time regimes (τ), which are attributed to the electron–phonon recombination (τ 1 ns). Density functional theory (DFT+U) based first-principles calculations provide information about the nature of the optical transitions and their probabilities for the majority and the minority spin channels. These transitions are partly responsible for the aforementioned recombination mechanisms, identified through the compari...

As optical two-dimensional coherent spectroscopy (2DCS) is extended to a broader range of applications, it is critical to improve the detection sensitivity of optical 2DCS. We developed a fast phase-cycling scheme in a non-collinear optical 2DCS implementation by using liquid crystal phase retarders to modulate the phases of two excitation pulses. The background in the signal can be eliminated by combining either two or four interferograms measured with a proper phase configuration. The effectiveness of this method was validated in optical 2DCS measurements of an atomic vapor. This fast phase-cycling scheme will enable optical 2DCS in novel emerging applications that require enhanced detection sensitivity., 4 pages, 3 figures, 1 table

La0.7Sr0.3MnO3 is a strongly correlated complex oxide. There is limited information about La0.7Sr0.3MnO3 thin films’ transient reflectivity (TR), where differences in ultra-fast dynamics due to surface and interface effects are expected. By decreasing the film thickness, additional energy states emerge, providing extra relaxation channels. Due to the reduced absorption in thin films, observing the effects of these extra states in TR signal is challenging, especially in a hole doped system such as La0.7Sr0.3MnO3. Moreover, in lower thicknesses, sinusoidal behavior superimposed on the TR signal is not analyzable by Fourier transforms. Wavelet transforms are perfect tools to analyze these fast-vanishing oscillations.

CdGeP2 represents a broad class of nonlinear and optoelectronic materials whose growth can be improved through characterization by terahertz time-domain spectroscopy. We determine THz refraction, absorption, electron-phonon coupling, carrier mobility and scattering mechanisms.

We investigate temperature-dependent recombination mechanisms, decay times and AC photoconductivity of CdSiP2 nonlinear crystal using Time resolved terahertz spectroscopy. Carrier density and mobility are extracted by fitting photoconductivity with Drude-Smith model.

Photoexcited carrier relaxation dynamics were investigated using AC photoconductivity in type-II quantum wells. Meta stability of excited carriers were observed to arise due to electron-phonon interactions.

For powder samples of CuAl1- x Fe x O2(x = 0, 0.01, 0.05, and 0.1), measured optical properties are compared with model simulations and phonon spectra are compared with simulations based on weighted dynamical matrix approach.

We demonstrate temperature-dependent refraction, absorption, electron-phonon coupling, AC conductivity and mobility in bulk chalcopyrite semiconductors using THz-TDs. The measured optical and electronic properties are significantly influenced by temperature that affects the underlying carrier scattering mechanism.

Previous studies have shown that hydrogen treatment leads to the formation of blue to black TiO_2, which exhibits photocatalytic activity different from that of white pristine TiO_2. However, the underlying mechanism remains poorly understood. Herein, density functional theory is combined with comprehensive analytical approaches such as X-ray absorption near edge structure spectroscopy and transient absorption spectroscopy to gain fundamental understanding of the correlation among the oxygen vacancy, electronic band structure, charge separation, charge carrier lifetime, reactive oxygen species (ROS) generation, and photocatalytic activity. The present work reveals that hydrogen treatment results in chemical reduction of TiO_2, inducing surface and subsurface oxygen vacancies, which create shallow and deep sub-band gap Ti(III) states below the conduction band. This leads to a blue color but limited enhancement of visible light photocatalytic activity up to 440 nm at the cost of reduced ultraviolet photocatalytic activity. The extended light absorption spectral range for reduced TiO_2 is ascribed to both the defect-to-conduction band transitions and the valence band-to-defect transitions. The photogenerated charge carriers from the defect states to the conduction band have lifetimes too short to drive photocatalysis. The Ti(III) deep and shallow trap states below the conduction band are also found to reduce the lifetime of photogenerated charge carriers under ultraviolet light irradiation. The ROS generated by the reduced TiO_2 are less than those generated by pristine TiO_2. Consequently, the reduced TiO_2 exhibits ultraviolet-responsive photocatalytic activity worse than that of pristine TiO_2. This report shows that increasing the light absorption spectral range of a semiconductor by doping or introduction of defects does not necessarily guarantee an increase in photocatalytic activity.

Transient reflectivity (TR) measurements for La0.7Sr0.3MnO3 thin films indicate enhanced surface recombination of charge carriers for thinner films (d < 20 nm). Wavelet analysis of residual TR shows abrupt oscillatory modes with close energy ranges.

Automated, polarization-controlled 2D coherent spectroscopy is shown based on liquid-crystal variable retarders. Polarization-dependent rephasing spectra are recorded in a single scan, with absolute phase determined by a single auxiliary measurement.

Terahertz time-domain spectroscopy is employed to investigate temperature-dependent properties of bulk chalcopyrite crystals (CdGeP$_2$, ZnGeP$_2$ and CdSiP$_2$). The complex spectra provide the refraction and absorption as a function of temperature, from which electron-phonon coupling and average phonon energies are extracted and linked to the mechanics of the A- and B-site cations. Also, AC conductivity spectra provide carrier densities and electron scattering times, the temperature dependence of which is associated with unintentional shallow dopants. Temperature dependence of the scattering time is converted into carrier mobility and modeled with microscopic transport mechanisms such as polar optical phonon, acoustic phonons, deformation potential, ionized impurity and dislocation scattering. Hence, analysis links the THz optical and electronic properties to relate microscopic carrier transport and carrier-lattice interactions., Comment: 12 pages, 5 figures, journal submission preprint

Hot electrons established by the absorption of high-energy photons typically thermalize on a picosecond time scale in a semiconductor, dissipating energy via various phonon-mediated relaxation pathways. Here it is shown that a strong hot carrier distribution can be produced using a type-II quantum well structure. In such systems it is shown that the dominant hot carrier thermalization process is limited by the radiative recombination lifetime of electrons with reduced wavefunction overlap with holes. It is proposed that the subsequent reabsorption of acoustic and optical phonons is facilitated by a mismatch in phonon dispersions at the InAs-AlAsSb interface and serves to further stabilize hot electrons in this system. This lengthens the time scale for thermalization to nanoseconds and results in a hot electron distribution with a temperature of 490 K for a quantum well structure under steady-state illumination at room temperature.

In Forster resonance energy transfer (FRET), energy non-radiatively transfers from a blue-shifted emitter to a red-shifted absorber by dipole–dipole coupling. This study shows that plasmonics enables the opposite transfer direction, transferring the plasmonic energy towards the short-wavelength direction to induce charge separation in a semiconductor. Plasmon-induced resonance energy transfer (PIRET) differs from FRET because of the lack of a Stoke's shift, non-local absorption effects and a strong dependence on the plasmon's dephasing rate and dipole moment. PIRET non-radiatively transfers energy through an insulating spacer layer, which prevents interfacial charge recombination losses and dephasing of the plasmon from hot-electron transfer. The distance dependence of dipole–dipole coupling is mapped out for a range of detuning across the plasmon resonance. PIRET can efficiently harvest visible and near-infrared sunlight with energy below the semiconductor band edge to help overcome the constraints of band-edge energetics for single semiconductors in photoelectrochemical cells, photocatalysts and photovoltaics. Plasmon-induced resonance energy transfer is revealed and explored for solar energy harvesting from visible and near-infrared light.

Optical injection and detection of charge currents is an alternative to conventional transport and photoemission measurements, avoiding the necessity of invasive contact that may disturb the system being examined. This is a particular concern for analyzing the surface states of topological insulators. In this work one- and two-color sources of photocurrents are isolated and examined in epitaxial thin films of Bisub2/subSesub3/sub. We demonstrate that optical excitation and terahertz detection simultaneously captures one- and two-color photocurrent contributions, which has not been required for other material systems. A method is devised to extract the two components, and in doing so each can be related to surface or bulk excitations through symmetry. The separation of such photocurrents in topological insulators opens a new avenue for studying these materials by all-optical methods.

An experimental apparatus is described for multidimensional optical spectroscopy with fully automated polarization control, based on liquid crystal variable retarders. Polarization dependence of rephasing two-dimensional coherent spectra are measured in a single scan, with absolute phasing performed for all polarization configurations through a single automated auxiliary measurement at the beginning of the scan. A factor of three improvement in acquisition time is demonstrated, compared to the apparatus without automated polarization control. Results are presented for a GaAs quantum well sample and an InGaAs quantum well embedded in a microcavity.

Optical rectification of near-infrared laser pulses generates broadband terahertz radiation in chalcopyrite crystals CdGeP2, ZnGeP2 and CdSiP2. The emission is characterized using linear-polarized excitation from 0.8 eV to 1.55 eV (1550 nm – 800 nm). All three crystals are (110)-cut and polished to 0.5 mm, thinner than the coherence length across most of the excitation photon energy range, such that they all produce a bandwidth ~2.5 THz when excited with ~100 fs pulses. It is found that CdGeP2 produced the strongest emission at telecoms wavelengths, while CdSiP2 is generally the strongest source. Pump-intensity dependence provides the nonlinear coefficients for each crystal.

Applications of wavelet analysis in ultra-thin film transient reflectivity (TR) measurements have been investigated. Advantages of utilizing different localized wavelet bases, in position and time, have been addressed on the residual TR signals. Morse wavelets have been used to obtain information from the abrupt oscillatory modes in the signal, which are not distinguishable with conventional methods such as Fourier transforms. These abrupt oscillatory modes are caused by the surface, interface, or any short-lived oscillatory modes which are suppressed in the TR signal in ultra-thin films. It is demonstrated that by choosing different Morse wavelets, information regarding different oscillatory modes in the TR signal of a heterostructure thin film is achievable. Moreover, by performing wavelet analysis on multiferroic heterostructures, oscillatory modes with very close energy ranges are easily distinguishable. For illustration, residuals of the TR signals have been obtained by a pump-probe setup in reflectivity mode on La0.7Sr0.3MnO3/SrTiO3 and BaTiO3/La0.7Sr0.3MnO3/SrTiO3 samples, where sufficient signal to noise ratios have been achieved by taking multiple scans. The residual signals have been analyzed with Morse wavelets, and multiple oscillatory modes with close energy ranges have been observed and distinguished. This approach can isolate the location of various oscillatory modes at the surface, interface and in the bulk of the heterostructure sample.

The photocatalytic water oxidation activity of hematite (α-Fe2O3) has been greatly enhanced by incorporating hematite nanoparticles on the reduced graphene oxide (rGO) nanosheets. Photoelectrochemical measurement results show that coupling the hematite nanoparticles with the rGO greatly increases the photocurrent and reduces the charge recombination rate. Transient absorption spectroscopy and time-domain terahertz spectroscopy have provided the direct evidence that the photogenerated electrons have transferred as the mobile carriers from α-Fe2O3 to rGO, which enhances the charge separation and suppresses the charge recombination. This work has provided new insight into the mechanism of photocatalysis enhancement by reduced graphene oxide, which has implications in the design of semiconductor/graphene heterojunction photocatalysts.

Compared to pristine Cu2O nanoparticles (NPs), Ag@Cu2O core-shell NPs exhibit photocatalytic activity over an extended wavelength range because of the presence of localized surface plasmon resonance (LSPR) in the Ag core. The photocatalysis action spectra and transient absorption measurements show that the plasmonic energy is transferred from the metal to the semiconductor via plasmon-induced resonant energy transfer (PIRET) and direct electron transfer (DET) simultaneously, generating electron–hole pairs in the semiconductor. The LSPR band of Ag@Cu2O core-shell NPs shows a red-shift with an increase in the Cu2O shell thickness, extending the light absorption of Ag@Cu2O heterostructures to longer wavelengths. As a result, the photocatalytic activity of the Ag@Cu2O core-shell NPs is varied by modulation of the shell thickness on the nanometer scale. This work has demonstrated that the Ag@Cu2O core-shell heterostructure is an efficient visible-light plasmonic photocatalyst, which allows for tunable light ab...

Optical 2-D Fourier transform spectroscopy is a powerful technique for studying resonant light-matter interactions, determining the transition structure and monitoring dynamics of optically created excitations. The ability to separate homogeneous and inhomogeneous broadening is one important capability. In this paper, we discuss the use of this technique to study excitonic transitions in semiconductor nanostructures. In quantum wells, the effects of structural disorder is observed as inhomogeneous broadening of the exciton resonances. In quantum dots, the temperature dependence of the homogeneous width gives insight into the nature of the dephasing processes.

While two-photon emission processes are firmly established in atomic physics, their observation and use in semiconductor physics remains elusive. Here, we experimentally investigate stimulated two-photon emission in photoexcited bulk CdSe and identify requirements for the observation of stimulated two-photon emission. In particular, this process requires population inversion as well as two-photon transition energies close to the bandgap energy. In any regime investigated in the present study, net optical gain is not achieved, as the free-carrier absorption intrinsically linked to the photoexcitation completely masks the two-photon gain. The results are well in line with a recent study on nondegenerate versions of two-photon emission in GaAs and place clear limits for the practical use of two-photon emission in optically excited semiconductors.

Understanding and controlling the spin degree of freedom in two-dimensional transition metal dichalcogenides offers the potential for designing functional quantum materials. This work investigates the dynamics of photo- and resident carrier spins in an encapsulated MoSe2 monolayer using non-degenerate time-resolved Kerr-rotation microscopy. The lightly doped monolayer exhibits clear exciton and trion resonances with spin-polarizations that are characterized by a fast (~20 ps) decay attributed to photocarrier relaxation and recombination, followed by a slow (~690 ps) decay associated with resident carrier depolarization. Dual-frequency Kerr-rotation spectra directly reveal exciton-trion coupling on ultrashort timescales and within the spin coherence time of the system. Moreover, the distribution of the exciton-trion coupling features exposes inhomogeneous broadening likely arising from different domains within the excitation spot.

Plasmonics can enhance solar energy conversion in semiconductors by light trapping, hot electron transfer, and plasmon-induced resonance energy transfer (PIRET). The multifaceted response of the plasmon and multiple interaction pathways with the semiconductor makes optimization challenging, hindering design of efficient plasmonic architectures. Therefore, in this paper we use a density matrix model to capture the interplay between scattering, hot electrons, and dipole–dipole coupling through the plasmon's dephasing, including both the coherent and incoherent dynamics necessary for interactions on the plasmon's timescale. The model is extended to Shockley–Queisser limit calculations for both photovoltaics and solar-to-chemical conversion, revealing the optimal application of each enhancement mechanism based on plasmon energy, semiconductor energy, and plasmon dephasing. The results guide application of plasmonic solar-energy harvesting, showing which enhancement mechanism is most appropriate for a given semiconductor's weakness, and what nanostructures can achieve the maximum enhancement.

Efficient solar energy conversion in photovoltaics and solar to chemical conversion is hindered by large band gaps and poor absorption in thin films. The easily tunable absorption and scattering cross section of localized surface plasmon resonance (LSPR) make it an ideal solution to capturing lost light. For above band edge light, scattering and light trapping can be used to increase absorption in thin semiconductor films, improving photoconversion without sacrificing recombination times. Below the band edge, plasmonic hot electrons can transfer to the semiconductor directly or resonant energy transfer can non-radiatively induce charge separation, allowing photoconversion where the semiconductor cannot absorb. In this brief review, we explore the mechanisms and efficiency of light recovery in plasmonics. Surface plasmon polaritons are used to increase light trapping in semiconductor nanowires using a metal nanohole array. Metal-semiconductor nanostructures with varying energy alignment, insulating barrier thickness, and spectral overlap are systematically varied to differentiate hot electron and resonant energy transfer. Transient absorption spectroscopy and action spectrum analysis are applied to track plasmonic charge creation and transfer, linking short and long time scale behavior. Guidelines are given for achieving optimal plasmonic light capturing and enhancement across the solar spectrum.

Epitaxial NbO2 (110) films, 20 nm thick, were grown by pulsed laser deposition on Al2O3 (0001) substrates. The Ar/O2 total pressure during growth was varied to demonstrate the gradual transformation between NbO2 and Nb2O5 phases, which was verified using x-ray diffraction, x-ray photoelectron spectroscopy, and optical absorption measurements. Electric resistance threshold switching characteristics were studied in a lateral geometry using interdigitated Pt top electrodes in order to preserve the epitaxial crystalline quality of the films. Volatile and reversible transitions between high and low resistance states were observed in epitaxial NbO2 films, while irreversible transitions were found in case of Nb2O5 phase. Electric field pulsed current measurements confirmed thermally-induced threshold switching., Comment: This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics D: Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0022-3727/48/33/335308

Films of the topological insulator Bi2Se3 are grown by molecular beam epitaxy with in-situ reflection high-energy electron diffraction. The films are shown to be high-quality by X-ray reflectivity and diffraction and atomic-force microscopy. Quantum interference control of photocurrents is observed by excitation with harmonically related pulses and detected by terahertz radiation. The injection current obeys the expected excitation irradiance dependence, showing linear dependence on the fundamental pulse irradiance and square-root irradiance dependence of the frequency-doubled optical pulses. The injection current also follows a sinusoidal relative-phase dependence between the two excitation pulses. These results confirm the third-order nonlinear optical origins of the coherently controlled injection current. Experiments are compared to a tight-binding band structure to illustrate the possible optical transitions that occur in creating the injection current., 11 pages, 3 figure, journal article

A one-dimensional photonic crystal is patterned into an active planar waveguide containing multiple InGaAs quantum wells. External coupling reflectivity is used to map out the photonic band structure, revealing a clear anti-crossing at ~1.37 eV in the 45° TM polarized spectrum. The band structure is compared to and confirmed by scattering-matrix calculations. Photoluminescence measurements are performed in the same geometry on the patterned and unpatterned regions of the sample. The latter shows conventional quantum-well emission and GaAs emission with increasing pump power. In contrast, the spectra from the patterned sample contain a sharp mode from the dielectric-like band of the anti-crossing, corresponding to the Brillouin zone edge. Power-dependent excitation shows this mode to be strongly super-linear, indicative of band edge lasing.

We have studied the power-dependent wavelength shift of photonic coupling resonances of a two-dimensional photonic crystal waveguide by reflection geometry pump-probe measurements. The quadratic response is indicative of two-photon induced carrier creation, which alters the refractive index of the semiconductor core of the photonic lattice. A free-carrier model is used to simulate the phenomenon, giving values of the change in refractive index per unit carrier density that satisfactorily compare to values calculated for bulk AlGaAs under similar conditions. Time-resolved spectra are also presented, showing relaxation times of

Strong resonant polarization conversion is observed in the reflectivity properties of one-dimensional (1-D) lattices of air trenches deeply etched in AlGaAs surface waveguides. The symmetry properties and the magnitudes of the observed effects are found to be in good agreement with the results of scattering matrix calculations.

We present compelling experimental results of the optical characteristics of transparent oxide CuGaO2 and related CuGa1-xFexO2 (with 0.00≤x≤0.05) alloys, whereby the forbidden electronic transitions for CuGaO2 become permissible in the presence of B-site (Ga sites) alloying with Fe. Our computational structural results imply a correlation between the global strain on the system and a decreased optical absorption edge. However, herein, we show that the relatively ordered CuGa1-xFexO2 (for 0.00≤x≤0.04) structures exhibit much weaker vis-absorption compared to the relatively disordered CuGa0.95Fe0.05O2.

Photoluminescence spectra of YVO$_{4}$:Eu$^{3+}$ nanoparticles are presented,with and without the attachment of of organic linker molecules that are proposed for linking to biomolecules. YVO$_{4}$:Eu$^{3+}$ nanoparticles with 5% dopant concentration were synthesized by wet chemical synthesis. X-ray diffraction and transmission electron microscopy show the expected wakefieldite structure of tetragonal particles with an average size of 17 nm. Fourier-transform infrared spectroscopy determines that metal-carboxylate coordination is successful in replacing the native metal-hydroxyl bonds with three organic linkers, namely benzoic acid, 3-nitro 4-chloro-benzoic acid and 3,4-dihydroxybenzoic acid, in separate treatments. UV-excitation photoluminescence spectra show that the position and intensity of dominant $^{5}D_{0}-^{7}F_{2}$ electric-dipole transition at 619 nm is unaffected by the benzoic acid and 3-nitro 4-chloro-benzoic acid treatments. Attachment of the 3,4-dihydroxybenzoic acid produces an order-of-magnitude quenching of the photoluminescence, due to the presence of high-frequency modes in the linker. Ratios of the dominant electric- and magnetic-dipole transitions confirm infrared measurements, which indicate that the bulk crystal of the nanoparticle is unchanged by all three treatments., Comment: 9 pages, 5 figures, journal article

Collinear phase-matched optical rectification is studied in ZnGeP$_{2}$ pumped with near-infrared light. The pump-intensity dependence is presented for three crystal lengths (0.3, 1.0 and 3.0 mm) to determine the effects of linear optical absorption, nonlinear optical absorption and terahertz free-carrier absorption on the generation. Critical parameters such as the coherence length (for velocity matching), dispersion length (for linear pulse broadening) and nonlinear length (for self-phase modulation) are determined for this material. These parameters provide insight into the upper limit of pulse intensity and crystal length required to generate intense terahertz pulse without detriment to the pulse shape. It is found that for 1-mm thick ZnGeP$_{2}$(012), pumped at 1.28 micron with intensity of ~15 GW/cm2 will produce intense undistorted pulses, whereas longer crystals or larger intensities modify the pulse shape to varying degrees. Moreover, phase-matching dispersion maps are presented for the terahertz generation over a large tuning range (1.1-2.4 micron) in longer (3 mm) crystal, demonstrating the phase-matching bandwidth and phase mismatch that leads to fringing associated with multi-pulse interference. All observed results are simulated numerically showing good qualitative agreement., Comment: 7 pages, 4 figures, journal submission, version 2

We have used femtosecond pump-probe spectroscopy to study the ultrafast nonlinear response of AlGaAs two-dimensional photonic crystal waveguides in the near-infrared spectral region. The modulation of the reflectivity spectra due to the refractive index change produced by photogenerated carriers was measured. We observed an instantaneous pump-induced shift in the wavelength of a photonic resonance at 882 nm with a fast decay time of ≈8 ps. The magnitude of the reflectivity change was very large at wavelengths close to the photonic resonance, with a maximum value of ΔR/R>30% at 877 nm. These results confirm the excellent potential of photonic crystal waveguides in ultrafast nonlinear switching applications.

Generation of terahertz pulses by optical rectification is demonstrated in chalcopyrite ZnGeP 2 (ZGP) as a function of pump intensity, wavelength and crystal orientation. For infrared excitation, ZGP emission exceeds that of GaAs and GaP.

Optical rectification is demonstrated in (110)-cut ZnGeP_2 (ZGP) providing broadband terahertz (THz) generation. The source is compared to both GaP and GaAs over a wavelength range of 1150 nm to 1600 nm and peak intensity range of 0.5 GW/cm^2 to 40 GW/cm^2. ZGP peak-to-peak field amplitude is larger than in the other materials due to either lower nonlinear absorption or larger second order nonlinearity. This material is well suited for broadband THz generation across a wide range of infrared excitation wavelengths., Comment: 4 pages, 3 figures, journal article

Optical two-dimensional Fourier-transform spectroscopy is used to study interfacial GaAs quantum dots (QDs). We extract the temperature dependence of the QD homogeneous linewidth and energy relaxation from quantum well excitons to the lower energy QDs.

Electrical currents are generated in clean silicon at T = 300 K using quantum interference of femtosecond fundamental and second-harmonic pulses. This efficient photoinjection of ballistic currents across the indirect bandgap is detected by the emitted terahertz radiation.

Zscans of 20 nm Au films at 630 nm show strong fluence and pulse-width dependence of nonlinear absorption that is characteristic of electron heating; seff increases > 100 × as pulse width increases hom 0.1 ? 6 ps.

An integrated AlGaAs all-optical 188-ps delay line is characterized over the C- and L- bands. Self-switching by input intensity is achieved using a nonlinear directional coupler and a racetrack delay line.

Growth of pure phase delafossite CuFeO2 thin films on Al2O3 (00.1) substrates by pulsed laser deposition was systematically investigated as a function of growth temperature and oxygen pressure. X-ray diffraction, transmission electron microscopy, Raman scattering, and x-ray absorption spectroscopy confirmed the existence of the delafossite phase. Infrared reflectivity spectra determined a band edge at 1.15 eV, in agreement with the bulk delafossite data. Magnetization measurements on CuFeO2 films demonstrated a phase transition at TC ≈ 15 ± 1 K, which agrees with the first antiferromagnetic transition at 14 K in the bulk CuFeO2. Low temperature magnetic phase is best described by commensurate, weak ferromagnetic spin ordering along the c-axis.

Highly efficient SHG can be achieved by harnessing slow light effects in microring resonator structures. We propose an angular quasi-phase-matching scheme based on polar dependence of polarization inside the ring resonator.

Bragg stacks were simply fabricated from evaporated gold and spin-coated polymer layers. High reflectivity occurs for only a few bilayers; compared to single gold films nonlinear absorption is enhanced by ~7x near a Bragg resonance.

Enhanced nonlinear parametric conversion is demonstrated via doubly resonant coupling to leaky eigenmodes in photonic crystal waveguides. In particular, we show an example of sum-frequency generation. This technique can be extended into a useful spectroscopic tool to access more wavelengths and wavevectors by considering difference-frequency generation and non-collinear geometries.