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Two-dimensional (2D) materials offer an ideal platform to study the strain fields induced by individual atomic defects, yet challenges associated with radiation damage have so far limited electron microscopy methods to probe these atomic-scale strain fields. Here, we demonstrate an approach to probe single-atom defects with sub-picometer precision in a monolayer 2D transition metal dichalcogenide, WSe2-2xTe2x. We utilize deep learning to mine large data sets of aberration-corrected scanning transmission electron microscopy images to locate and classify point defects. By combining hundreds of images of nominally identical defects, we generate high signal-to-noise class averages which allow us to measure 2D atomic spacings with up to 0.2 pm precision. Our methods reveal that Se vacancies introduce complex, oscillating strain fields in the WSe2-2xTe2x lattice that correspond to alternating rings of lattice expansion and contraction. These results indicate the potential impact of computer vision for the development of high-precision electron microscopy methods for beam-sensitive materials.

Summary A series of readily accessible and scalable benzo[1,2-b:4,5-b′]dithiophene (BDT)-2,5-dithienyl-thieno[3,4-c]pyrrole-4,6-dione (TPD-T2)-based donor polymers are utilized in organic photovoltaic (OPV) cells blended with the non-fullerene acceptor IT-4F. All polymers readily dissolve in chlorine-free solvents such as xylene, and the corresponding photoactive blend films can be processed in ambient from this solvent to fabricate cells with power conversion efficiencies (PCEs) >12%–14%. Furthermore, the blend processing and OPV metrics are remarkably insensitive to the processing methodology (spin coating versus blade coating), processing solvent, polymer molecular mass and dispersity index, and the results were rationalized by UV-vis, PL, fsTA, AFM, TEM, GIWAXS, and SCLC measurements. These properties enable the first OPV modules, processed in ambient from a benign solvent, with a certified PCE of 10.1% for an area of 20.4 cm2 and >7% after light soaking. The same module also delivers a power of ∼40 μW/cm2 (PCE ∼22%) under indoor lighting.

Hyperuniform many-body systems in $d$-dimensional Euclidean space ${R}^{d}$ are characterized by completely suppressed (normalized) infinite-wavelength density fluctuations, and appear to be endowed with novel exotic physical properties. Recently, hyperuniform systems of disordered varieties have been observed in the context of various atomic-scale two-dimensional (2D) materials. In this work, we analyze the effects of localized defects on the density fluctuations across length scales and on the hyperuniformity property of experimental samples of 2D transition metal dichalcogenides. In particular, we extract atomic coordinates from time series annular dark field-scanning transmission electron microscopy imaging data of 2D tungsten chalcogenides with the 2H structure (Te-doped 2H-${\mathrm{WSe}}_{2}$) showing continuous development and evolution of electron-beam-induced defects, and construct the corresponding chemical-bonding informed coordination networks between the atoms. We then compute a variety of pair statistics and bond-orientational statistics to characterize the samples. At low defect concentrations, the corresponding materials are nearly hyperuniform, characterized by significantly suppressed scattering at the zero wave-number limit (omitting forward/ballistic scattering). As more defects are introduced, the (approximate) hyperuniformity of the materials is gradually destroyed, and the system becomes nonhyperuniform even when the material still contains a significant amount of crystalline regions. At high defect concentrations, the structures become antihyperuniform with diverging (normalized) large-scale density fluctuations, mimicking those typically observed at the thermal critical points associated with phase transitions. Overall, the defected materials possess varying degrees of orientation order, and there is apparently no intermediate hexatic phase emerging. To understand the observed nearly hyperuniform density fluctuations in the slightly defected materials, we construct a minimalist structural model and demonstrate that the experimental samples can be essentially viewed as perturbed honeycomb crystals with small correlated displacements and double chalcogen vacancies. Moreover, the small correlated displacements alone can significantly degrade hyperuniformity of the perfect honeycomb structure. Therefore, even a small amount of vacancies, when coupled with correlated displacements, can completely destroy hyperuniformity of the system.

Polymers with very low surface conductivity can easily accumulate an electric charge through surface friction. If the charged entities are grounded with conductive materials, they may discharge electricity associated with sparks that will interrupt the production process, and more seriously, cause industrial disasters. In order to avoid damage from electrical sparks, an antistatic agent (ASA) is employed with the polymer during production. In this study, conductive iron oxide (Fe3O4) nanoparticles (NPs) with hydrophobic modification by oleic acid (OA) were prepared using a co-precipitation method. Fourier transformed infrared spectra and thermogravimetric analysis confirmed that OA-Fe3O4 was formed through chemisorption interactions between OA and Fe3O4. Fe3O4 NPs were entrapped in solid lipid NPs (SLNs) and poly(lactide-co-glycolide) NPs through hydrophobic interactions to obtain new composite antistatic NPs (CANs). Surfactants and their concentration played a decisive role in the zeta potential and particles size of CANs. Sodium dodecyl sulfate (SDS) created some regular-shaped CANs, and didodecyldimethylammonium bromide (DMAB) and glycerol monostearate (GMS) created irregular-shaped CANs. 10% methanol and 1% Tween 80 yielded an appropriate contact angle with polymer films. The surface electrical resistance value of CANs was found to be in the order of SDS > DMAB > GMS. GMS-based CANs reached a lower electrical resistance value of around 108 Ω/Sq, and can be used as an ASA in engineering practice. Keywords: Composite antistatic nanoparticle, Polymer film, Surface electrical resistance, Sodium dodecyl sulfate, Didodecyldimethylammonium bromide, Glycerol monostearate

Although the success of graphene research has opened up a new route for wearable electronic and optoelectronic devices, producing graphene with controllable quality and cost-effective growth on a large scale remains challenging due to the lack of understanding about its growth kinetics. Domain boundaries interrupt lattice continuity of graphene; therefore, lowering the nucleation density at the initial stage of graphene growth in the chemical vapor deposition (CVD) process is beneficial for improving the quality of graphene for applications. Herein, we show that by forming an oxide passivation layer on Cu substrates before CVD graphene growth, graphene nucleation density can be effectively decreased. The nucleation mechanism in the presence of an oxide passivation layer is of interest. The analysis of graphene growth kinetics suggests that the thickness of the boundary layer for mass transfer on the substrate surface plays an important role in controlling the reduction rate of the oxide passivation layer. A thick boundary layer created under slow gas flow causes slow reduction of the oxide passivation layer, making finite sites for graphene nucleation. The domain density in a graphene layer is therefore significantly reduced. Graphene sheets of various domain densities (ranging from 104 to 1 mm−2) can be fabricated by suitably choosing the growth parameters. The graphene sheet with a lower density of domain boundaries exhibits better electrical conductivities.

Ferrimagnetic materials combine the advantages of the low magnetic moment of an antiferromagnet and the ease of realizing magnetic reading of a ferromagnet. Recently, it was demonstrated that compensated ferrimagnetic half metals can be realized in Heusler alloys, where high spin polarization, zero magnetic moment, and low magnetic damping can be achieved at the same time. In this work, by studying the spin-orbit torque induced switching in the Heusler alloy Mn2 Ru1- x Ga, it is found that efficient current-induced magnetic switching can be realized in a nearly compensated sample with strong perpendicular anisotropy and large film thickness. This work demonstrates the possibility of employing compensated Heusler alloys for fast, energy-efficient spintronic devices.

We present a facile synthesis method to make a new ladder-type heptacyclic dithienobenzofluorene (DTBF) framework, where the central 2,7-fluorene unit is covalently fastened with two external thiophenes via two CC bridges. A dieneyne-containing precursor undergoes DBU-induced double benzannulation to regiospecifically introduce two solubilizing 2-octyldodecyl side chains at 5,10-positions of DTBF. The rigid and coplanar Br-DTBF monomer with sufficient solubility was copolymerized with 5,6-difluoro-4,7-bis(5-(trimethylstannyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (Sn-DTFBT) and 5,10-bis(5-(trimethylstannyl)thiophen-2-yl)naphtho[1,2-c:5,6-c′]bis([1,2,5]thiadiazole) (Sn-DTNT) via Stille coupling to furnish two donor–acceptor copolymers, PDTBFFBT and PDTBFNT, respectively. Their thermal, optical, electrochemical, molecular stacking and photovoltaic properties are investigated. PDTBFNT has a higher molecular weight, smaller optical and electrochemical band gaps, and stronger solid-state packing than PDTBFFBT. DFT calculations were carried out to gain insight into the electronic and structural properties of DTBF and its derivatives. Bulk heterojunction solar devices with the ITO/ZnO/polymers:PC71BM/MoO3/Ag configuration were fabricated. By adding 5 vol% diphenyl ether (DPE) as an additive, PDTBFNT:PC71BM and PDTBFFBT:PC71BM devices achieved the power conversion efficiencies of 5.22% and 2.68%, respectively. The superior efficiency of PDTBFNT over PDTBFFBT is attributed to the better LUMO energy alignment between PDTBFNT and PC71BM and the face-on π-stacking of PDTBFNT in the active layer. Moreover, PDTBFNT exhibited a higher field-effect transistor hole mobility of 1.90 × 10−2 cm2 V−1 s−1 than PDTBFFBT with a value of 3.96 × 10−3 cm2 V−1 s−1.

A new polymer PDTFDPP20 based on dithieno[3,2-b:6,7-b′]fluorene (DTF) unit was developed. This polymer with a face-on orientation has achieved a high field-effect mobility up to 5 cm2 V–1 s–1., A ladder-type dithieno[3,2-b:6,7-b′]fluorene (DTF), where the central fluorene is fused with two outer thiophene rings at its 2,3- and 6,7-junctions, is developed. The pentacyclic DTF monomers were polymerized with dithienodiketopyrrolopyrrole (DPP) acceptors to afford three alternating donor–acceptor copolymers PDTFDPP16, PDTFDPP20, and PDTFDPP32 incorporating different aliphatic side chains (R1 group at DTF; R2 group at the DPP moieties). The side-chain variations in the polymers play a significant role in determining not only the intrinsic molecular properties but also the intermolecular packing. As evidenced by the 2-dimensional GIXS measurements, PDTFDPP16 with octyl (R1) and 2-ethylhexyl (R2) side chains tends to align in an edge-on π-stacking orientation, whereas PDTFDPP20 using 2-butyloctyl (R1) and 2-ethylhexyl (R2) adopts a predominately face-on orientation. PDTFDPP32 with the bulkiest 2-butyloctyl (R1) and 2-octyldodecyl (R2) side chains shows a less ordered amorphous character. The OFET device using PDTFDPP20 with a face-on orientation determined by GIXS measurements achieved a high hole-mobility of up to 5 cm2 V–1 s–1. The high rigidity and coplanarity of the DTF motifs play an important role in facilitating intramolecular 1-dimensional charge transport within the polymer backbones. The implementation of main-chain coplanarity and side-chain engineering strategies in this research provides in-depth insights into structure–property relationships for guiding development of high-mobility OFET polymers.

A flexible solar device showing exceptional air and mechanical stability is produced by simultaneously optimizing molecular structure, active layer morphology, and interface characteristics. The PFDCTBT-C8-based devices with inverted architecture exhibited excellent power conversion efficiencies of 7.0% and 6.0% on glass and flexible substrates, respectively.

The dependence of the avalanche breakdown voltage on vertically linear doping gradient of the drift region based on Silicon-On-Insulator (SOI) lateral diffuse metal oxide semiconductor (LDMOS) is studied. Vertically linear doping profile (VD) of the LDMOS structure is exhibited to obviously improve safe of operation area (SOA) from the conventional uniform and variable linear doping structure. From the BFOM (Baliga's Figure of Merits), optimal relationship between breakdown voltage and on-state resistance (RonA) is found. The simulation results the breakdown voltage of the VD SOI LDMOS device can be improved by 19%,and 35% and the on-state resistance can be lowered by 19% and 29% at 2µm and 3µm over conventional. A 200 V LDMOS transistor with RonA of less than 800 mΩ-mm2 based on various SOI layers is reported.

We report the synthesis and the self-assembled morphologies of a series of new rod-coil diblock copolymers, poly[2,7-(9,9-dihexylfluorene)]-b-poly(4-vinylpyridine) (PF-b-P4VP). The rod-coil diblock copolymers were synthesized via Suzuki coupling reaction and living anionic polymerization. Probing by transmission electron microscopy, small-angle X-ray scattering and atomic force microscopy, we found that the microphase separation varies from lamellar to cylindrical and then to spherical, depending on the length of P4VP blocks. The P4VP coil blocks were further hydrogen-bonded with 3-pentadecylphenol (PDP) to form rod-comb block copolymers. Similar to conventional coil-coil block copolymers-based supramolecules, the incorporation of PDP transforms the morphologies from lamellar to cylindrical or from cylindrical to spherical due to the increase of volume fraction of P4VP(PDP) comb blocks. The strategy described here can be used to tune the self-assembled structures of rod-coil block copolymers.