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The photonic-crystal surface-emitting laser is a new-generation semiconductor laser capable of emitting a high-power, high-quality (i.e., high-brightness) beam, as well as on-chip two-dimensional beam steering, lasing in various wavelength regimes, and on-chip ultra-short self-pulsation, owing to their freedom of light-matter control. Here we introduce light detection as a new functionality, wherein the photonic-crystal laser is operated under reverse-bias conditions. We find that the photonic-crystal laser operated under reverse-bias conditions has a very high shunt resistance and a low dark current, which are essential qualities to achieve high detectivity. In addition, high responsivity is achieved by utilizing proper band-edge-modes and $Q$ -matching conditions for resonant light absorption. Furthermore, by employing photonic-crystal lasers as the detector as well as the laser source, a direct time-of-flight distance measurement is successfully demonstrated.

Realizing high-peak-power (tens to hundreds of watts or higher) short-pulse (tens of picoseconds or less) operation in semiconductor lasers is crucial for state-of-the-art applications including eye-safe high-resolution remote sensing and non-thermal ultrafine material processing. However, it has been challenging to introduce mechanisms that enable stable high-peak-power short-pulse operation in conventional semiconductor lasers. Here, we propose photonic crystal lasers that have two-dimensionally arranged gain and loss sections to enable high-peak-power short-pulse operation in the fundamental mode while suppressing lasing in higher-order modes to avoid laser instability. On the basis of this concept, we experimentally realize a high peak power of ~20 W and a short pulse width of ~35 ps with an injection current of only 3-4 A using a 400-μm-diameter device and theoretically predict that even higher peak power (>300 W) can be achieved in a 1-mm-diameter device. Our results will contribute to the realization of next-generation laser sources for the aforementioned applications. By using engineered gain and loss sections in a photonic crystal laser, pulses with a peak power of ~20 W and pulse width of ~35 ps have been experimentally demonstrated and even higher peak power operation (>300 W) has been theoretically predicted.

Photonic-crystal surface-emitting lasers (PCSELs) are attractive for a wide range of applications such as material processing and remote sensing owing to their advantage of broad-area coherent lasing supported by a 2-D photonic crystal. Recently, we proposed double-lattice photonic-crystal resonators and achieved 10-W-class high-power and high-beam-quality (namely, high-brightness) operation. To further increase the brightness, it is important to understand the lasing mode behavior of PCSELs in detail. In this article, we experimentally investigate the change in the lasing mode depending on the current injection levels and compare the results with a theoretical analysis that accounts for the change in refractive index and gain distributions due to the current injection. We observed a transition from single-mode lasing to two-mode lasing at high injection currents. We develop a technique for resolving the near-field profiles of individual lasing modes and show that these profiles coincide with theoretical predictions. A comparison of experimental and theoretical results reveals that high-order modes appear due to a bandgap confinement effect induced by a change in the refractive index in the carrier injection area. To effectively remove this confinement effect and suppress the oscillation of high-order modes, we incorporate an in-plane heterostructure into the PCSEL.

We develop a self-consistent theoretical model for simulating the lasing characteristics of photonic-crystal surface-emitting lasers (PCSELs) under continuous-wave (CW) operation that takes into account thermal effects caused by current injection. Our model enables us to analyze the lasing characteristics of PCSELs under CW operation by solving self-consistently the changes in the in-plane optical gain and refractive index distribution, which is associated with heat generation and temperature rise, and the change in the oscillation modes. We reveal that the lasing band-edge selectivity and beam quality of the PCSELs are affected by the spatial distribution of the band-edge frequency of the photonic crystal formed by the refractive index distribution, which depends on the temperature distribution in the resonator. Furthermore, we show that single-mode lasing with narrow beam divergence can be realized even at high current injection under CW operation by introducing a photonic-crystal structure with an artificially formed lattice constant distribution, which compensates such band-edge frequency distribution.

Light detection and ranging (LiDAR) is a key technology for smart mobility of robots, agricultural and construction machines, and autonomous vehicles. However, current LiDAR systems often rely on semiconductor lasers with low-quality, large-divergence, and asymmetric beams, requiring high-precision integration of complicated lens systems to reshape the beam. Also, due to the broad linewidth and the large temperature dependence of their lasing spectrum, a bandpass filter with broad bandwidth must be used in front of the detector, so the detected signal is affected by noise from background light such as sunlight. These critical issues limit the performance, compactness, affordability, and reliability of the LiDAR systems. Photonic-crystal surface-emitting lasers (PCSELs) have attracted much attention as novel semiconductor lasers that can solve the issues of conventional semiconductor lasers owing to their capability of high-quality, very-narrow-divergence, and symmetric beam operation supported by broad-area band-edge resonance in their two-dimensional photonic crystal. In this paper, we show the progress and the state of the art of broad-area coherent PCSELs and their application to a time-of-flight (ToF) LiDAR system. We first review the progress of PCSELs made so far. Next, we show recent progress based on PCSELs with a double-lattice structure that enables higher-power and narrower-divergence operation while keeping a symmetric beam shape. By optimizing the double-lattice photonic crystal and the reflective properties of a backside distributed Bragg reflector (DBR), we achieve a high peak power of 10 W while maintaining a nearly diffraction-limited beam divergence of ∼0.1° (FWHM) from a 500 µm diameter resonator. Using this PCSEL, we construct a LiDAR system that uses no external lens system in its light source and demonstrate highly spatially resolved ToF sensing (measurement range of ∼20 m), which is appropriate for autonomous robots and factory automation.

We report on photonic crystal lasers (PCSELs) with high power and high beam quality. The PCSELs have been developed with AI-assisted technologies. The developed devices with a 500µm diameter successfully oscillated with a high, 10W-class peak output power and a very narrow divergence angle of 0.1°. This fact indicates that the devices operate in a complete single lateral and longitudinal mode even over the large area of 500µm diameter. The devices have been installed in time-of-flight LiDAR system. Very high-resolution operation has been successfully realized even though a lens system is not utilized, clearly demonstrating the advantage of high-brightness PCSELs.

We report on electrically driven InP-based photonic-crystal surface-emitting lasers (PCSELs), which possess a deep-air-hole photonic crystal (PC) structure underneath an active region formed by metal-organic vapor-phase-epitaxial (MOVPE) regrowth. Single-mode continuous-wave (CW) lasing operation in 1.3-μm wavelength is successfully achieved at a temperature of 15°C. It is shown that the enhancement of lateral growth during the MOVPE regrowth process of air holes enables the formation of deep air holes with an atomically flat and thin overlayer, whose thickness is less than 100 nm. A threshold current of 120 mA (threshold current density = 0.68 kA/cm2) is obtained in a device with a diameter of 150 μm. A doughnut-like far-field pattern with the narrow beam divergence of less than 1° is observed. Strong optical confinement in the PC structure is revealed from measurements of the photonic band structure, and this strong optical confinement leads to the single-mode CW lasing operation with a low threshold current density.

Mechanical-free, high-power, high-beam-quality two-dimensional (2D) beam scanning lasers are in high demand for various applications including sensing systems for smart mobility, object recognition systems, and adaptive illuminations. Here, we propose and demonstrate the concept of dually modulated photonic crystals to realize such lasers, wherein the positions and sizes of the photonic-crystal lattice points are modulated simultaneously. We show using nano-antenna theory that this photonic nanostructure is essential to realize 2D beam scanning lasers with high output power and high beam quality. We also fabricate an on-chip, circuit-driven array of dually modulated photonic-crystal lasers with a 10 × 10 matrix configuration having 100 resolvable points. Our device enables the scanning of laser beams over a wide range of 2D directions in sequence and in parallel, and can be flexibly designed to meet application-specific demands., 電気的に2次元ビーム走査可能な新たなフォトニック結晶レーザーチップの開発に成功. 京都大学プレスリリース. 2020-07-22., Order from chaos. 京都大学プレスリリース. 2020-11-18.

Photonic-crystal surface-emitting lasers (PCSELs) use the two-dimensional (2D) resonance at the band-edge of a photonic crystal for lasing, and they feature various outstanding functionalities such as high-brightness lasing, arbitrary shaping of beam patterns and on-chip 2D beam steering. In this paper, to investigate the applicability of PCSELs for high-speed operation, we design PCSELs with enhanced in-plane optical feedback, which enable single-mode lasing inside a circular region the diameter of which is less than 10 µm. To realize a strong in-plane confinement of the lasing mode, we increase the one-dimensional coupling coefficients between counter-propagating waves through the careful design of the lattice points. We also introduce an in-plane heterostructure composed of two photonic crystals with different photonic bandgaps and utilize reflection at the boundary of the two photonic crystals in addition to the optical feedback at the band-edge of each photonic crystal. By using three-dimensional finite-difference time-domain method (3D-FDTD), we confirm that the proposed hetero-PCSELs can achieve single-mode lasing operation inside a 9-µm-diameter and possibly realize a 3-dB modulation bandwidth larger than 40 GHz.

We demonstrate the characteristics of photonic crystal lasers fabricated by air hole retained regrowth using metal-organic vapor-phase epitaxy based on an organic arsenic source [tertiary-butyl arsine (TBAs)]. TBAs has the advantage of high decomposition efficiency compared with AsH3, which enables us to achieve a unique air hole shape under the crystal regrowth. We demonstrate that photonic crystal lasers with an area of $200 \times 200~\mu \text{m}^{2}$ exhibit single-mode lasing with a low lasing threshold of ~0.5 kAcm−2. The effect of the unique shape of the air holes obtained by the TBAs-based regrowth on the laser performance is discussed using coupled-wave theory.

We investigate microcrystalline-silicon (μc-Si) solar cells with photonic crystals on the top surface, which exploit the large-area resonant effect in photonic crystals to enhance light absorption, for the first time. Guidelines for designing the surface photonic crystals are discussed, showing the importance of oblique leakage loss suppression. The influence of direct surface etching of the intrinsic μc-Si layer (or photovoltaic layer) is studied, and it is shown that unbalanced etching of the amorphous and crystalline components of the μc-Si layer deteriorates the electronic performance, in particular, the open-circuit voltage and fill factor. We then introduce photonic crystals under an adequate etching condition, and confirm that the light absorption (or the external quantum efficiency) is successfully enhanced by improving the incident light coupling to the resonant modes. Finally, we fabricate a few-micrometer-thick μc-Si solar cell with a photonic crystal on the top surface and demonstrate an active-area efficiency of 11%, resulting from enhancement of the short-circuit current density, while simultaneously suppressing the deterioration of open-circuit voltage and fill factor. The obtained efficiency is the highest reported for a category of μc-Si solar-cell in which all the n/i/p layers are composed of Si, excluding wide-gap materials such as silicon oxide.

We investigate the propagation of light in an ultra-thin gap in stacked-stripe three-dimensional (3D) photonic crystals operating in the near-infrared wavelength range. We fabricate 3D photonic crystals composed of 32 stacked layers with an artificially introduced gap (∼200 nm) in the center of the structure by using a wafer bonding method. In order to study the characteristics of the gap, we introduce oblique waveguides to connect the gap with the upper and lower sides of the photonic crystal. The observation of light output from waveguides that are distant from the waveguide used for incident light demonstrates for the first time that light propagates along the air gap and is distributed to multiple output waveguides. Moreover, we perform calculations that reveal the formation of a propagation mode resulting from introduction of the ultra-thin gap. We analyze the coupling between the propagation mode and the oblique waveguide mode and discuss the characteristics of light distribution via the gap.

We develop a self-pulsating photonic-crystal surface-emitting laser with a ring-shaped saturable absorber inside the current injection region, and realize self-pulsation with a peak power of 8W, a pulse width of less than 100ps, and a beam divergence angle of 0.5°.

Mechanical-free, high-power, high-beam quality two-dimensional beam scanning is strongly required for LiDAR systems for autonomous driving. Here, we propose and demonstrate a new, dually-modulated photonic crystal laser, with which we successfully emit a high-quality laser beam with watt-class power in any desired direction.

Thermal management for the continuous wave (CW) operation of large-area double-lattice photonic-crystal surface-emitting lasers (PCSELs) is discussed. Thermal analysis is conducted to calculate the temperature of PCSELs under CW operation with heat dissipation. We assemble a double-lattice PCSEL in a water-cooling package with a highly thermally conductive sub-mount for heat dissipation. We measure the device temperature by using a thermographic camera and compare the measured values with the calculations. Owing to proper heat dissipation, we successfully realize ∼ 8 W of output power under CW operation of a single-chip double-lattice PCSEL.

We develop double-lattice photonic-crystal surface-emitting lasers, which are designed to achieve high-power and high-beam-quality operation. CW output power of ∼7W is successfully achieved from a single-chip with a diameter of 800μm.

The passively Q-switched operation of a cryogenically cooled Yb:YAG/Cr:YAG microchip laser was demonstrated with end pumping by a photonic crystal surface emitting laser (PCSEL). This laser generated 70 μJ/1.7 ns/3.2 kHz pulses with near diffraction limited beam quality (M2=1.1) at 1029.4 nm. There were no coupling optics between the microchip laser crystal and PCSEL, which made the system simple and compact.

Achieving high brightness (where brightness is defined as optical power per unit area per unit solid angle) in semiconductor lasers is important for various applications, including direct-laser processing and light detection and ranging for next-generation smart production and mobility. Although the brightness of semiconductor lasers has been increased by the use of edge-emitting-type resonators, their brightness is still one order of magnitude smaller than that of gas and solid-state/fibre lasers, and they often suffer from large beam divergence with strong asymmetry and astigmatism. Here, we develop a so-called ‘double-lattice photonic crystal’, where we superimpose two photonic lattice groups separated by one-quarter wavelength in the x and y directions. Using this resonator, an output power of 10 W with a very narrow-divergence-angle (

We demonstrate self-pulsation with a pulse width of 100 ps and a beam divergence angle of 0.35° in a photonic-crystal surface-emitting laser by introducing a saturable absorber section and employing a new double-hole photonic crystal.

The radiation pattern and out-coupling efficiency of light from the end surface of interlayer (oblique) waveguides in stacked-stripe 3-D photonic crystals are numerically investigated. It is shown that the coupling to the surface mode of the 3-D photonic crystal decreases the out-coupling efficiency to free-space modes down to 60%, whereas the reflection at the surface is negligibly small. The efficiency can be improved to 90% by introducing a 2-D grating-like structure to create a surface-mode gap, where surface modes are prohibited.

Enhancing the absorption of thin-film microcrystalline silicon solar cells over a broadband range in order to improve the energy conversion efficiency is a very important challenge in the development of low cost and stable solar energy harvesting. Here, we demonstrate that a broadband enhancement of the absorption can be achieved by creating a large number of resonant modes associated with two-dimensional photonic crystal band edges. We utilize higher-order optical modes perpendicular to the silicon layer, as well as the band-folding effect by employing photonic crystal superlattice structures. We establish a method to incorporate photonic crystal structures into thin-film (~500 nm) microcrystalline silicon photovoltaic layers while suppressing undesired defects formed in the microcrystalline silicon. The fabricated solar cells exhibit 1.3 times increase of a short circuit current density (from 15.0 mA/cm2 to 19.6 mA/cm2) by introducing the photonic crystal structure, and consequently the conversion efficiency increases from 5.6% to 6.8%. Moreover, we theoretically analyze the absorption characteristics in the fabricated cell structure, and reveal that the energy conversion efficiency can be increased beyond 9.5% in a structure less than 1/400 as thick as conventional crystalline silicon solar cells with an efficiency of 24%. © 2015 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd.

In this paper, we demonstrate the operation of a photonic-crystal surface-emitting laser that has a double-hole two-dimensional photonic-crystal structure. We successfully fabricate this unique structure by employing air-hole retained crystal regrowth using metalorganic vapor phase epitaxy. Single-mode lasing having a narrow beam divergence of less than 0.2° is achieved with a large lasing area of 300×300 μm2.

A passively Q-switched Yb:YAG/Cr:YAG laser pumped by a photonic-crystal surface-emitting laser (PCSEL) was developed. Yb:YAG crystal was cryogenically cooled by liquid nitrogen at 77 K. Excellent Gaussian beam profile (M 2 = 1.02) and high slope efficiency of 58% were demonstrated without using a coupling optics between a laser material and PCSEL.

We carry out the structural design of photonic crystals to enhance the optical absorption of thin-film microcrystalline silicon (μc-Si) solar cells using two methods. First, by exhaustive search, we choose a structure with the largest absorption within the investigated patterns. Then we employ a sensitivity analysis to finely modulate the structure for further increase of the optical absorption. The obtained μc-Si solar cell structure with a photonic crystal in this work has more than twice as much optical absorption as that without a photonic crystal.

Photonic-crystal surface-emitting lasers (PCSELs) have attracted considerable attention as a novel semiconductor laser that surpasses traditional semiconductor lasers. In this review article, we review the current progress of PCSELs, including the demonstration of large-area coherent oscillation, the control of beam patterns, the demonstration of beam steering, and the realization of watt-class and high-beam-quality operation. Furthermore, we show very recent progress in the exploration of high brightness of more than 300 MW cm−2 sr−1, obtained with a high output power of about 10 W while maintaining a high beam quality M2 ~ 2. The PCSELs with such high performances are expected to be applied to a variety of fields, such as laser-based material processing, optical sensing (light-detection and ranging (LiDAR)), and lighting, as they retain the benefits of compact and high-efficiency semiconductor lasers.

An oblique waveguide in a stripe-stacked three-dimensional photonic crystal is a useful structure for interlayer coupling, but has a problem that the out-coupling to free-space is inclined and spatially asymmetric. We propose a new end structure that provides vertical and less-frequency-dependent out-coupling characteristics.

We investigate fabrication of a photonic-crystal structure by air-hole retained crystal regrowth using TBAs-based MOVPE for GaAs based photonic-crystal lasers. Air holes having a filling factor of 10 % (the depth was 250 nm and the width was 110 nm) are successfully embedded. The embedded air holes show characteristic shapes due to anisotropy of growth rate along different crystal planes, such as gallium face and arsenic face. Furthermore, a low threshold of 0.5 kAcm−2 lasing is achieved with the fabricated structure.

We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ~500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ~20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

Three-dimensional (3D) photonic crystals can block photons in any direction and are expected to make possible their ultimate control. However, creating 3D crystals without any unintentional defects over large areas at optical wavelengths has been challenging. For example, opal-based crystals inevitably contain unintentional defects, it is difficult to increase the sizes of micro-manipulated crystals over approximately 6 microm and producing stacked 3D crystals with thin 2D layers requires complicated and time-consuming processes. So far, these difficulties have hindered 3D photonic-crystal research. Here, we demonstrate a novel top-down approach to creating 3D crystals that overcomes these difficulties and significantly simplifies the process. We have developed a double-angled deep-etching method, which enables the direct creation of 3D woodpile crystals in single-crystalline silicon. A strong photonic bandgap effect with >20 dB attenuation in all directions has been achieved. Furthermore, bonding a light emitter onto or between 3D crystals created in this way has been shown to enhance or suppress spontaneous emission.

We successfully developed a high-precision wafer alignment and bonding system for the fabrication of a variety of 3-D nanostructures. To control the wafer positions with high accuracy during the wafer-bonding process, we improved upon a design of the conventional mask-alignment stage. A stress sensor was incorporated to measure the load between the two wafers. In addition, the parallelism of the wafers was monitored by an optical interferometry system. To determine alignment errors in both the and directions simultaneously, we devised an alignment method consisting of crossed vernier scales. We demonstrated that the new alignment and bonding system allowed us to realize precise 3-D photonic crystals with the alignment inaccuracy of < 100 nm at most, and we show that the best experimental error achieved to date was < 25 nm. As this system has the benefit of more readily and intuitively determining the absolute positions of the two wafers, it can be applied to the fabrication of a wide variety of nanoscale multilayer devices.

We design and demonstrate nanocavities with TE-like and TM-like polarizations at the surface of 3D photonic crystals using 3D design freedom in a 3D structure and the polarization-independent surface-mode gap.

We experimentally demonstrate that the addition of partial lattice disorder to a thin-film micro-crystalline silicon photonic crystal results in the controlled spectral broadening of its absorption peaks to form quasi resonances; increasing light trapping over a wide bandwidth while also reducing sensitivity to the angle of incident radiation. Accurate computational simulations are used to design the active-layer photonic crystal so as to maximize the number of its absorption resonances over the broadband interval where micro-crystalline silicon is weakly absorbing before lattice disorder augmented with fabrication-induced imperfections are applied to further boost performance. Such a design strategy may find practical use for increasing the efficiency of thin-film silicon photovoltaics.

Enhancing the absorption of thin-film microcrystalline silicon solar cells at 600–1000 nm wavelengths is very important to the improvement of the energy conversion efficiency. This can be achieved by creating a large number of resonant modes utilizing two-dimensional photonic crystal band edges, which exceeds the Lambertian limit of absorption in random textures. We focus on suppressing the parasitic absorption of back-reflector metal and doped layers in photonic crystal microcrystalline silicon solar cells. We achieve a high active-area current density of 22.6 mA cm−2 for an ultrathin (∼500 nm)-film silicon layer and obtain an active-area efficiency of ∼9.1%, as independently confirmed by the CSMT of AIST.

We developed a cryogenically cooled Yb:YAG continuous wave oscillator directly pumped with a photonic crystal surface-emitting laser (PCSEL). A high slope efficiency of 65.7% was obtained at an output power of 208 mW. The beam quality was close to the diffraction limit, with M2

The creation of large-area, unintentional-defect-free three-dimensional (3D) photonic crystals in the optical regime is a key challenge toward the realization of the arbitrary 3D manipulation of photons. In this article, we discuss an advanced fabrication method of 3D silicon photonic crystals based on the highly accurate alignment and wafer bonding of silicon-on-insulator (SOI) wafers. We introduce an advanced alignment system, in which the alignment process is automated by image recognition and feed-back control of stages, and show that it achieves an alignment accuracy better than ~50 nm. The bonding of SOI wafers is also investigated to obtain 3D crystals composed of highly pure crystalline silicon. We show the fabrication results of large-area 3D photonic crystals based on such considerations and demonstrate the successful introduction of artificial defects as functional components, such as coupled waveguide pairs or waveguides/nanocavities. We expect that these will be pioneering results toward the arbitrary 3D control of photons using 3D photonic crystals.

The fabrication of air/semiconductor two-dimensional photonic crystal structures by air-hole-retained crystal regrowth using tertiary-butyl arsine-based metal–organic vapor-phase epitaxy for GaAs-based photonic crystal lasers is investigated. Photonic crystal air holes with filling factors of 10–13%, depths of ∼280 nm, and widths of 120–150 nm are successfully embedded. The embedded air holes exhibit characteristic shapes due to the anisotropy of crystal growth. Furthermore, a low lasing threshold of ∼0.5 kA/cm2 is achieved with the fabricated structures.

A new design of vertical waveguide is investigated for on-demand three-dimensional light guiding in three-dimensional photonic crystals. Optical characterization successfully demonstrates that the wide-band vertical guiding is realized in a fabricated photonic crystal.

We introduce recent progress on the control of light propagation in three-dimensional (3-D) photonic crystals. We demonstrate 3-D guiding within photonic crystal-embedded waveguides. A novel controlling approach using the surface of crystals is also discussed.

We demonstrate the operation of two types of waveguides formed in three-dimensional (3D) photonic crystals (PCs). We first created a vertical waveguide by stacking acceptor-type defects, in which near-infrared light propagates in the stacking direction. Light is transmitted independent of polarization in this waveguide because electromagnetic waves couple to a degenerate mode derived from the structural symmetry of the defects. We then connected horizontal and vertical waveguides to form an L-shaped waveguide, which is able to guide near-infrared light from the horizontal to vertical direction in the 3D PC. We envisage the realization of more complex 3D optical interconnections by optimizing the waveguide structures and increasing the PC period in the vertical direction.

Three-dimensional photonic crystals are successfully fabricated by a double-angled deep-etching technique. Furthermore, bonding a light emitter onto or between three-dimensional crystals has been shown to enhance or suppress emission.

We investigate the improvement of the conversion efficiency of ultra-thin (~500nm-thick) microcrystalline silicon (μc-Si) solar cells incorporating photonic-crystal structures, where light absorption is strongly enhanced by the multiple resonant modes in the photonic crystal. We focus on the quality of the intrinsic μc-Si layer deposited on the substrate, which is structured to form a photonic crystal at its upper surface with a period of several hundred nanometers. We first study the crystalline quality from the viewpoint of the crystalline fraction and show that the efficiency can be improved when the deposition conditions for the μc-Si layer are tuned to give an almost constant crystalline fraction of ~50% across the entire film. We then study the influence of the photonic-crystal structure on the crystalline quality. From transmission-electron microscope images, we show that the collision of μc-Si grains growing at different angles occurs when a photonic-crystal structure with an angular surface is used; this can be suppressed by introducing a rounded surface structure. As a result, we demonstrate an efficiency of 8.7% in a ~500-nm thick, homo-junction μc-Si solar cell, which has only ~1/4 the thickness of typical μc-Si solar cells. We also discuss the possibility of further improving the efficiency by performing calculations that focus on the absorption characteristics of the fabricated cell structure.

We carry out the structural design of photonic crystals (PCs) using sensitivity analysis for enhancing optical absorption of thin film microcrystalline silicon (μc-Si) solar cells. In this paper, we employ a model which includes absorption of not only the thin film μc-Si, but also the transparent conductive oxide and metal back reflector for design accuracy. We carry out structural design for this model using sensitivity analysis which maximizes optical absorption in μc-Si layer. As a result, we succeed in obtaining the maximum short circuit current density of 25.2 mA/cm2 for thin film (600-nm thick) μc-Si solar cells (1.4-fold increase compared to the case without a PC).

We report the fabrication of photonic crystal surface-emitting lasers using an MBE air-hole retained growth method. We demonstrate the achievement of single-mode oscillation and observe a single-lobed, linearly polarized beam. We also use three-dimensional coupled wave analysis to calculate the effects of using different air-hole shapes, which determine the beam shape and polarization. A single-lobed, linearly polarized beam can be obtained by modifying the air holes from circular to a tilted-corn shape after growth.

We study mode stability in photonic-crystal surface-emitting lasers (PCSELs) with large coupling-coefficient-length product κ1DL(>6). We observe that mode competition occurs at high current levels above threshold. Our combined experimental and theoretical study provides the first evidence of the mode competition originating from the high-order band-edge modes. The decreased threshold margin between these competing high-order modes and the main lasing mode with increasing cavity length as well as the spatial hole burning effect may deteriorate the single-mode stability. Our finding is essential for designing single-mode high-power PCSELs for which the strategy to suppress the high-order modes must be considered.

We investigate nanocavities at the surface of three-dimensional (3D) photonic crystals, where the polarization-independent surface-mode gap can be utilized. We consider the formation of various nanocavities by introducing artificial defects utilizing the 3D structures around the surface and discuss the possibilities for increasing the Q-factors of the surface nanocavities with TE-like polarization based on the advanced designs of donor-type defects. We also introduce the design of acceptor-type defects and show that TM-like nanocavities are obtained. We then fabricate the designed nanocavities and examine their resonant characteristics; we successfully demonstrate TE-like nanocavities with Q-factors of ~40,000, which is four-times higher than previous surface cavities and as high as that of the cavities embedded inside 3D photonic crystals. TM-like nanocavities with Q-factors of ~22,000 are also demonstrated for the first time.

We report a method of embedding air/semiconductor two-dimensional photonic-crystal structures into semiconductor crystals using molecular beam epitaxy. We show that we can form air/GaAs photonic crystals composed of retained air holes only by growing an AlGaAs layer onto a GaAs substrate with photonic-crystal patterns. A variety of air/GaAs photonic-crystal structures can also be obtained by adjusting the relative directions between the molecular-beam irradiation and the crystalline orientation of GaAs. Finally, a flat surface, where the root-mean-square value is less than 1 nm, are obtained when AlGaAs layers with sufficient thickness are grown even after the air-hole retained growth.