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Your search keyword '"L. G. Il'chenko"' showing total 5 results
Start Over Author "L. G. Il'chenko" Topic materials science
5 results on '"L. G. Il'chenko"'

1. Gated field emitter arrays

Author

A. E. Lushkin, Tomasz Debski, Ivo W. Rangelow, I. I. Bekh, Piotr Grabiec, Peter Hudek, L. G. Il’chenko, Steffen Biehl, Ivan Kostic, Stanislaw Mitura, V. V. Il’chenko, and Wolfgang Barth

Subjects
Materials science, Field emission display, Fabrication, business.industry, Nanotechnology, Chemical vapor deposition, Condensed Matter Physics, Engraving, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Field electron emission, Surface micromachining, visual_art, Electrode, visual_art.visual_art_medium, Optoelectronics, Electrical and Electronic Engineering, business, Common emitter
Abstract

The successful fabrication of field emission (FE) devices is directly related to process simplicity and device performance, which depends to a large extent on the tip material and emitter geometry. On the other hand, these characteristics are the most important issues influencing industrial applicability of the FE devices. In most typical solutions single emitter cells consist of a sharp tip located in the hollow, with the tip apex surrounded by a gate. The fabrication process described here is simple and allows self-aligned gate electrode formation. The field emission of the emitter tips is supported by a 50-nm diamond-like-carbon (DLC) film formed by chemical vapor deposition.

Published
2001

3. Interaction Potential Between Two Closely Spaced Dielectric Surfaces

Author

V.V. Lobanov, V. V. Il'chenko, and L. G. Il'chenko

Subjects
Crystal, Surface (mathematics), Materials science, Physics::Optics, Charge density, Geometry, Dielectric, Poisson's equation, Space (mathematics), Molecular physics, Quartz, Effective nuclear charge
Abstract

The structural and total interaction potentials of the vacuum space between two dielectric quartz crystal slabs of symmetric volume features but asymmetric surface features were calculated with Green’s function applied to the non-local Poisson equation.

Published
2009

4. The structured potential in the vacuum gap between two closely spaced semiconductors (dielectrics)

Author

V. V. Il'chenko, L. G. Il'chenko, A.A. Chuiko, and V.V. Lobanov

Subjects
Materials science, Condensed matter physics, business.industry, Dielectric, Cathode, law.invention, Anode, Field electron emission, Semiconductor, Optics, law, Lattice (order), Microelectronics, Poisson's equation, business
Abstract

The structured component DeltaVst(roarr) of the full potential formed between two dielectrics (semiconductors) in a small vacuum interval is calculated theoretically. The analytical expressions for DeltaVst(roarr) in the vacuum gap is calculated, using the Green's functions of the nonlocal Poisson equation. It is shown that the structured component DeltaVst(roarr) in the case of the small separated interval L~0.3-2 nm determines the lateral changing of the potential barrier height in the vacuum gap, which can result in the origin of the ordered long-period lattice of the areas of the decrease (increase) of the full potential inside a vacuum interspace. This fact can lead to the origin of the cold field emission canals, which are stimulated by the microscopic structure of the anode surface. If the cathode-anode vacuum distance is increasing (L4rarrinfin) the origin of the emission centers at the cathode surface is connected only with the microscopic structure of its surface

Published
2006

5. Field emission cathode array with self-aligned gate electrode fabricated by silicon micromachining

Author

K. Studzińska, W. Barth, Ivo W. Rangelow, Ivan Kostic, T. Iwert, S. Mitura, P. Hudek, F. Shi, T. Debski, L. G. Il’chenko, I. I. Bekh, Piotr Grabiec, A. E. Lushkin, Steffen Biehl, V. V. Il’chenko, and G. Haindl

Subjects
Materials science, Silicon, business.industry, General Engineering, Analytical chemistry, chemistry.chemical_element, Chemical vapor deposition, Self-aligned gate, Cathode, law.invention, Field electron emission, Surface micromachining, symbols.namesake, chemistry, Transmission electron microscopy, law, symbols, Optoelectronics, business, Raman spectroscopy
Abstract

An electron emission behavior of field emission arrays based on a new bulk/surface silicon micromachining method of fabrication was studied. The process developed is simple and allows self-aligned gate electrode formation. The field emission of the emitter tips is enhanced by a 50 nm diamond-like carbon (DLC) film formed by chemical vapor deposition. Detailed Raman, Auger, and transmission electron microscopy (TEM) investigations of the deposited DLC films will be presented. Results about the presence of nanocrystalline diamond obtained with Raman spectroscopy could not be confirmed by the TEM investigations (the nanocrystalline diamond is smaller than 10 nm).

Published
2000

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