1. Combined Effects of Proton Irradiation and Forward Gate-Bias Stress on the Interface Traps in AlGaN/GaN Heterostructure
- Author
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Yan-Rong Cao, Maosen Wang, K. K. Chen, Peijun Ma, Tian Zhu, Wang Xiaohu, Xiaohua Ma, Yue Hao, Jia Wang, Hao Zhang, Du Ming, Xue-Feng Zheng, and Ling Lv
- Subjects
Stress (mechanics) ,Nuclear and High Energy Physics ,Range (particle radiation) ,Materials science ,Nuclear Energy and Engineering ,Proton ,Condensed matter physics ,Wide-bandgap semiconductor ,Conductance ,Heterojunction ,Irradiation ,Electrical and Electronic Engineering ,Energy (signal processing) - Abstract
The combined effects of proton irradiation and forward gate-bias stress on the interface traps of AlGaN/GaN heterostructure have been studied in this article. It is found that the effect of proton irradiation and forward gate-bias on the shift of flat band voltage $V_{\mathrm {FB}}$ is independent. By utilizing the frequency-dependent conductance technique, it is found that the trap density $D_{\mathrm {T}}$ at metal/AlGaN interface decreases after proton irradiation and the $D_{\mathrm {T}}$ at most energy levels increases after the following forward gate-bias. The $D_{\mathrm {T}}$ at AlGaN/GaN interface increases after proton irradiation and then decreases after the following forward gate-bias. The energy level range of metal/AlGaN interface traps reduces significantly under the forward gate-bias for the irradiated devices, however, that of AlGaN/GaN interface traps decreases little. In summary, the combined effect of proton irradiation and forward gate-bias stress on the interface traps is more complex than that on the bulk traps in AlGaN layer.
- Published
- 2021
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