Search

The complete general solution of nonlinear 1-D undoped Poisson’s equation, in both Cartesian and cylindrical coordinates, is derived by employing a special variable transformation method. A general model platform for various types of emerging multi-gate MOSFETs is further constructed and verified with TCAD simulations. It is shown that this model platform is suitable for analyzing a series of emerging devices, such as double-surrounding-gate, inner-surrounding-gate, and outer-surrounding-gate nanoshell MOSFETs, all of which require different boundary conditions from the conventional gate-all-around nanowire device. [ABSTRACT FROM AUTHOR]

For the first time, an analytic surface-field-based model for nanowire MOSFETs with random dopant fluctuations (RDF) is reported. In this model, the depletion charge due to the discrete dopant distribution is described by the Dirac $\delta $ functions, while the mobile charge keeps its continuous form. By introducing two new variables, the discrete 1-D Poisson’s equation is transformed into a simple algebraic equation to correlate the surface potential with the field (due to the inversion charge). Without solving the potential distribution, the drain current can be calculated from the Pao–Sah integral using the oxide-interface boundary condition. This model is shown to be more accurate in predicting the RDF effects than the continuous TCAD simulations for all the operating regions. We also discuss the RDF-incorporated short-channel effects by solving the discrete 2-D Poisson’s equation in the subthreshold regime. [ABSTRACT FROM PUBLISHER]

We report a novel method to solve the nonlinear 1-D Poisson’s equation for the gate-all-around (GAA) nanowire MOSFETs with nonuniform doping profiles. An algebraic relation between the electric field and potential is identified to develop a surface-field-based compact model. Drain current is derived from the oxide-interface boundary condition to avoid the complicated surface-potential approach. As verified by the TCAD simulations, this analytic model is capable of continuously covering all operating regions of GAA nanowire MOSFETs with slowly varying doping profiles. [ABSTRACT FROM AUTHOR]

Abstract: An experimental study and modeling of double-surrounding-gate (DSG) and silicon-on-nothing surrounding-gate (SONSG) MOSFETs are presented. The manufacturing challenges of advanced multiple-gate MOSFETs are discussed; and DSG and SONSG devices are proposed as potential solutions to overcome these fabrication challenges. The analytic general solution to cylindrical (nonlinear) Poisson’s equation is applied to analyze DSG and SONSG device performance. Numerical issues of solving two coupled implicit transcendental equations to obtain two integration constants are addressed. It is found that under the same boundary conditions, concentration of the induced charge in a DSG MOSFET is comparable to a conventional double-gate MOSFET. [Copyright &y& Elsevier]

The authors would like to apologize for and correct a few errors about the references in our recently published paper ([1] of this reply), and make some comments: 1)

References [26] (by T. Alfrey et al.) and [32] in our paper should be [2] (by R. M. Fuoss et al.) and [3] as listed in this reply, respectively.