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Abstract: In this paper, silicon-on-insulator MOSFETs and ring oscillators are, for the first time, fabricated and characterized on 1.5μm-thick multilayered dielectric membranes, as a preliminary study for pressure sensing systems. Stresses were mechanically applied on these membranes, evolving drain current changes up to 5% in the devices characteristics, according to their channel type and orientation with respect to the stress, as well as resonance frequency shifts of −0.8% and +2.5% for the voltage controlled oscillators. Finite element simulations were performed, showing that the stresses are maximized at the center of the membrane anchors and pointing out the location for the devices to provide the best sensitivity. Internal membrane stresses are considered and discussed. [Copyright &y& Elsevier]

Abstract: In this paper, a novel method for the fabrication of planar double-gate (DG) MOS devices is presented. Successfully fabricated single-gate and DG MOSFET devices on the same wafer have been fully characterized and their electrical performances compared. The planar DG devices were fabricated using wafer bonding over pre-patterned cavities. Preliminary electrical characterization results show that the built planar DG devices exhibit the expected theoretical performances. We will also show the flexibility of this method in fabricating other devices besides planar DG and the possibility of changing the various materials used for the buried insulator layer. It is demonstrated that this fabrication method is a very promising and viable method for future technology application in fabricating novel devices. [Copyright &y& Elsevier]

Abstract: In this paper, “true” Silicon-On-Nothing (SON) MOSFETs fabricated by a new technique, consisting in Si layer transfer over a pre-etched cavity, are investigated. The process has no potential limitation with regards to the device dimensions as well as to the thicknesses of Si film and so-called “nothing” layers. Comparing to single-gate (SG) fully-depleted (FD) SOI MOSFETs fabricated on the same wafer, improved electrical characteristics of SON MOSFETs are demonstrated. Self-heating effect, which can be considered as the main drawback of SON devices, is experimentally addressed for the first time. Finally, the source-to-drain coupling through the substrate is demonstrated to be practically suppressed in such device architecture. [Copyright &y& Elsevier]