1. A Highly Efficient Annealing Process With Supercritical N2O at 120 °C for SiO2/4H–SiC Interface.
- Author
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Wang, Menghua, Yang, Mingchao, Liu, Weihua, Qi, Jinwei, Yang, Songquan, Han, Chuanyu, Geng, Li, and Hao, Yue
- Subjects
METAL oxide semiconductor field-effect transistors ,ANNEALING of metals ,FIELD-effect transistors ,NITROUS oxide ,METAL oxide semiconductor field ,DENSITY of states ,ELECTRIC fields - Abstract
A novel post-oxidation annealing (POA) process with supercritical N
2 O (SCN2 O) fluid is reported to be highly effective in improving the interface properties of the SiO2 /4H–silicon carbide (SiC) (0001) systems. After SCN2 O POA, the interface state density reduces to 2.8 × 1011 eV−1 cm−2 , which is about 3.5 times lower than that after a traditional high-temperature N2 O POA process. Meanwhile, the highest oxide critical electric field shows an increase of 18.19% and the near-interfacial oxide traps is reduced by 69.90% compared with that after N2 O POA process. The process temperature is as low as 120 °C. The significantly reduced processing temperature avoids additional defect generation while the supercritical state provides a stronger nitridation effect. SCN2 O annealing is a promising candidate for POA process toward high-performance SiC power metal-oxide-semiconductor field effect transistors (MOSFETs). [ABSTRACT FROM AUTHOR]- Published
- 2021
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