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The physical effects that must be included in an accurate model of a silicon-controlled rectifier are discussed and compared with those for bipolar transistors. There are key differences in the modeling of the intrinsic silicon resistances and current gain for the two devices. Proper modeling of the underlying physics results in a compact model that is applicable over a wide range of current levels and is scalable. [ABSTRACT FROM AUTHOR]

A practical approach for the compact modeling of electrostatic discharge (ESD) protection devices, using the behavioral language Verilog-A, is presented. Models of the NMOS transistor, the vertical n-p-n transistor, the diode, and the resistor have been developed, suitable for circuit-level simulation. Large-signal and small-signal models are provided for transient and alternating current (ac) simulation, respectively. A self-heating model is included for accurate simulation of the device ON-resistance under transient high-current conditions. [ABSTRACT FROM AUTHOR]

This paper presents a methodology for the efficient modeling of substrate noise coupling. A closed-form Green's function for nonuniformly doped substrates is employed with the correct singular characteristics. A novel global surface impedance matrix scheme is introduced to efficiently model nonuniformly doped wells, channel stop implants, and buried layers. Layout, device, and netlist extractors are developed so as to integrate our boundary element method (BEM) solver with commercial layout and circuit simulation tools. [ABSTRACT FROM AUTHOR]

Presents an analytic model of the direct tunneling current in metal-oxide-semiconductor devices as a function of oxide field. Modeling of the low-field roll-off; Field dependencies of the sheet charge, electron impact frequency on the interface and field probability; Modified approximation used.