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γ- and α-Al 2 O 3 films were prepared by chemical vapor deposition using CO 2 , Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO 2 laser was found to mostly produce α-Al 2 O 3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al 2 O 3 films when used at a high total pressure. γ-Al 2 O 3 films had a cauliflower-like structure, while the α-Al 2 O 3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al 2 O 3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed. [ABSTRACT FROM AUTHOR]

Abstract: Rutile and anatase TiO2 films were prepared by laser chemical vapor deposition using CO2 and Nd:YAG lasers. The effects of laser wavelength on the phase, orientation, and microstructure of these TiO2 films were investigated. Using a CO2 laser, single-phase rutile TiO2 films were obtained at 826–1225K. These films showed a (100) orientation and a dense structure. The highest deposition rate was 83μmh−1 at 1070K. Using a Nd:YAG laser, the phase of the TiO2 films changed from rutile to anatase with increasing deposition temperature from 852 to 1230K. The rutile TiO2 films showed a (100) orientation with a columnar structure, while the anatase TiO2 films exhibited a (001) orientation with a cauliflower-like structure. Using a Nd:YAG laser, the highest deposition rates for rutile and anatase TiO2 films were 142 and 40μmh−1, respectively. [Copyright &y& Elsevier]

Abstract: TiN–TiB2 composites were fabricated by spark plasma sintering at 1773–2573K. Effects of TiN and TiB2 content on relative density, microstructure, and mechanical properties were investigated. Above 2373K, TiN–TiB2 composites exhibited relative densities over 95%. A high density of 99.7% was obtained at 2573K with 20–30vol% TiB2. Shrinkage of the TiN–70vol% TiB2 composite was the highest at 1573–2473K. For the TiN–70vol% TiB2 composite prepared at 1973–2373K, TiN grains were small, while at 2573K, TiB2 became a continuous matrix, in which irregular-shaped TiN dispersed. hBN was formed in the TiN–TiB2 composite containing 50–60vol% TiB2 above 2373K. The maximum Vickers hardness and fracture toughness obtained for the TiN–80vol% TiB2 composite sintered at 2473K was 26.3GPa and 4.5MPa m1/2, respectively. [Copyright &y& Elsevier]

Abstract: Ba β-alumina films were prepared by laser chemical vapor deposition. Mostly single-phase Ba β-alumina films were obtained at 1125–1200K and for an Al/Ba molar ratio of 12.4–16.6. BaAl2O4 and α-Al2O3 were codeposited with Ba β-alumina under Ba- and Al-rich conditions, respectively. The Ba β-alumina films consisted of hexagonal grains, and the (110)-oriented Ba β-alumina films had a fin-like columnar structure. The highest deposition rate reached 120μmh−1 at around 1200K. A thin layer of Ba-rich superstructure was formed on the surface of the (110)-oriented columnar grains. [Copyright &y& Elsevier]

Abstract: Polycrystalline aluminum nitride (AlN) films were prepared by laser chemical vapor deposition method using aluminum acetylacetonate and ammonia as source materials. The effects of deposition conditions on the crystal phase, composition and microstructure were investigated. Polycrystalline AlN films were prepared at a laser power above 100W and a deposition temperature above 803K. The microstructure of AlN film changed from aggregated grains to faceted grains to pyramidal grains with increasing laser power and with decreasing total pressure. [Copyright &y& Elsevier]

Abstract: The TiO2 films were prepared on Pt/Ti/SiO2/Si substrate by a laser chemical vapor deposition method. With increasing laser power (P L) from 48 to 98W, the deposition temperature (T dep) monotonously increased from 849 to 929K. At T dep=849K (P L=48W), the rutile TiO2 film was prepared with strong (110) and (200) peaks. With increasing T dep from 849 to 883K (P L=71W), the intensity of (110) peak increased. The (110)-oriented TiO2 films were obtained for T dep beyond 903K (P L=81W). All TiO2 films showed faceted grains with the columnar cross-section. With increasing T dep, the grain size increased and the column became wider. The high deposition rate (R dep) ranged from 13.04 to 24.84μmh−1. [Copyright &y& Elsevier]

Abstract: Transparent lutetium aluminum garnet (Lu3Al5O12, LuAG) was fabricated by reactive spark plasma sintering. The effect of sintering temperature on the crystal phase, microstructure, transparency and mechanical properties of LuAG bodies was investigated. Fully dense and single-phase LuAG bodies were obtained at sintering temperatures 1573–1923K. The average grain size increased from 0.18 to 0.52μm with increasing sintering temperature from 1573 to 1773K, and grain growth became significant at 1823K. Transmittance showed a maximum value of 77.8% at 2000nm at a sintering temperature of 1773K after annealing at 1423K in air for 43.2ks. The Vickers hardness increased from 14.2 to 17.2GPa with decreasing grain size from 7.45 to 0.23μm. [Copyright &y& Elsevier]

Abstract: Silicon carbide–titanium carbide (SiC–TiC) nanocomposite thin films were prepared by radiofrequency magnetron sputtering using SiC–TiC composite targets fabricated by spark plasma sintering. The SiC thin films were amorphous at substrate temperatures below 573K and crystallized in the cubic crystal system (3C) at substrate temperatures greater than 773K. Cubic SiC–TiC nanocomposite thin films, which contain a mixture of 3C-SiC and B1-TiC phases, were obtained at a TiC content of greater than 20mol%. The amorphous films possessed a dense cross-section and a smooth surface. The morphology of the SiC–TiC nanocomposite thin films changed from granular to columnar with increasing substrate temperature. The SiC–TiC nanocomposite thin films prepared at TiC content of 70–80mol% and substrate temperature of 573K showed the highest hardness of 35GPa. [Copyright &y& Elsevier]

Abstract: Transparent yttria (Y2O3) bodies were fabricated by spark plasma sintering, and the effects of the sintering temperature on relative density, microstructure, and the optical and mechanical properties of Y2O3 bodies were investigated. Fully dense Y2O3 bodies were obtained at sintering temperatures 1473–1873K. The average grain size was 0.24–0.32μm at 1473–1573K, and steadily increased to 1.97μm with an increase in temperature to 1823K. The highest transmittance was obtained in the Y2O3 body sintered at 1573K and annealed at 1323K, showing 81.7% (99% of the theoretical value) at a wavelength of 2000nm. [Copyright &y& Elsevier]

Abstract: Ba–Ti–O films were prepared on Pt-coated Si substrate by laser chemical vapor deposition, and their orientations and microstructures were compared. Ba2TiO4, BaTiO3, BaTi2O5, Ba4Ti13O30 and BaTi4O9 single-phase films were prepared at Ti to Ba molar ratio from 0.41 to 3.49. The α′-Ba2TiO4 film showed (010) and (091) co-orientation with elongated, truncated columnar grains. The BaTiO3 film was composed of triangular and hexagonal grains with slight (111) orientation. The BaTi2O5 film had (010) orientation and faceted columnar grains. The Ba4Ti13O40 film showed (100) and (012) co-orientation with shellfish-like grains. The BaTi4O9 film showed (010) orientation with slightly rounded faceted columnar grains. The deposition rates of Ba–Ti–O films ranged from 30 to 144μmh−1. [Copyright &y& Elsevier]

Abstract: LaRuO3 films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R La/Ru) and microwave power (P M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R La/Ru <1.0, RuO2 films were obtained independent of P M. At R La/Ru =1.6–3.2 and P M =0.6–1.2kW (deposition temperatures of 973–998K), LaRuO3 single phase films were prepared. A product mixture of La2RuO5 and β-La3RuO7 was obtained at R La/Ru =4 and P M =1.2kW, while a mixture of RuO2 and La4.87Ru2O12 was formed at R La/Ru =4.6 and P M =0.6kW. LaRuO3 single phase films showed metallic conduction with a high electrical conductivity of 1.6×104 Sm−1 at room temperature. [Copyright &y& Elsevier]

Abstract: The effects of ball milling of starting powder and post-annealing of spark plasma sintered (SPSed) Lu2O3 on its microstructure and optical property were investigated. When ball-milled powder was used, the SPSed Lu2O3 was found to have a larger grain size with wider distribution and lower transparency than in the case using powder without ball milling. After annealing at 1323K in air, the Lu2O3 that was SPSed using ball-milled powder became colorless, had a higher transmittance in the visible spectrum than the case where as-received powder was used, and exhibited transmittances of 71.4% and 81.6% for wavelengths of 550 and 2000nm, respectively. [Copyright &y& Elsevier]

Abstract: (006)-oriented α-Al2O3 films were prepared by laser chemical vapor deposition (LCVD) using aluminum acetylacetonate (Al(acac)3) in CO2–H2 atmosphere. The effects of the CO2 mole fraction () and laser power (P L) on the crystal phase, microstructure, and deposition rate (R dep) were investigated. α- and γ-Al2O3 mixture films were prepared at P L =90W (deposition temperature of 818K), whereas (006)-oriented single-phase α-Al2O3 films were obtained at P L =110W (863K). The texture coefficient and the grain size of the (006)-oriented films increased with increasing . The orientation of the α-Al2O3 films changed from (006) to (104) to (012) with increasing P L (T dep). The R dep of the (006)-oriented α-Al2O3 films increased with increasing . [Copyright &y& Elsevier]

Abstract: Transparent lutetium oxide (Lu2O3) body was prepared by spark plasma sintering using a two-step pressure profile combined with a low heating rate. The effects of pre-load pressures from 10 to 100MPa and heating rates from 0.03 to 1.67Ks−1 on the microstructures and optical properties were investigated. With increasing pre-load pressures from 10 to 100MPa, the grains became smaller with a narrower distribution, whereas the transmittance showed maxima at 30MPa. The average grain size slightly increased from 0.67 to 0.86μm as the heating rate increased from 0.03 to 1.67Ks−1, while the transmittance decreased. Transmittances of 60% at 550nm and 79% at 2000nm were obtained under a pre-load pressure of 30MPa at a heating rate of 0.17Ks−1. [Copyright &y& Elsevier]

Transparent lutetium oxide bodies were fabricated by spark plasma sintering. The effects of sintering temperature, applied pressure, and holding time on the density, microstructure, and transmittance of these bodies were investigated. Nearly fully dense specimens were fabricated at above 1573 K and 100 MPa for 2.7 ks or at 1673 K and above 40MPa for 2.7 ks. The grain size and transmittance steadily increased with increasing sintering temperature from 1273 to 1723 K and abnormal grain growth occurred above 1723 K, resulting in a decrease of density and transparency. [ABSTRACT FROM AUTHOR]

Abstract: Yttrium silicate (Y–Si–O) films with eggshell- and fur-like microstructures were prepared by laser chemical vapor deposition using a Nd:YAG laser, and tetraethyl orthosilicate (TEOS) and yttrium dipivaloylmethane (Y(dpm)3) precursors. Amorphous Y–Si–O films were prepared at deposition temperature below 1200K. The crystalline Y–Si–O films with mixtures of Y4.67(SiO4)3O and α-Y2Si2O7 phases were obtained at deposition temperature above 1200K. y-Y2Si2O7 and X1-Y2SiO5 minor phases were also formed at a higher deposition temperature. At deposition temperature ranging between 1285 and 1355K, a dome-like structure covered with fine fur-like projections was formed under a total pressure of 3.5kPa, whereas an eggshell-like structure 200–300μm in diameter and 10–20μm in shell thickness was formed at 7.5kPa. The deposition rate for the Y–Si–O films with fur- and eggshell-like microstructures reached 300 and 1000μmh−1, respectively. [Copyright &y& Elsevier]

Abstract: Transparent Lu2Ti2O7 pyrochlore was fabricated by reactive sintering using spark plasma sintering at 1723K for 45min. The sintered body exhibited 72% transmittance at a wavelength of 2000nm and 40% transmittance at 550nm. The average grain size was 14.5μm with uniform microstructure. [ABSTRACT FROM AUTHOR]

Abstract: Y–Si–O films were prepared by laser chemical vapor deposition (LCVD) with a Nd:YAG laser using TEOS (tetraethyl orthosilicate) and Y(dpm)3 precursors. The effects of laser power (P L), deposition temperature (T dep) and total chamber pressure (P tot) on the phase, microstructure and deposition rate of Y–Si–O films were investigated. At P L <102W (T dep <1140K), amorphous Y–Si–O films were obtained independent of P tot. At P tot =0.6kPa, mixture phase films of Y2SiO5 (the X1 phase) and Y2Si2O7 (the α, β, δ and y phases) were obtained at P L =102W (T dep =1210K), while single phase X1–Y2SiO5 films were prepared at P L >139W (T dep >1280K). Y2Si2O7 mixture phase films were obtained at P tot =3.5kPa and Y2Si2O7 and Y2SiO5 (the X2 phase) mixture phase films were obtained at P tot =7.5kPa independent of T dep. Amorphous Y–Si–O films showed a dense, glassy microstructure. Faceted columnar grains grew on the Y–Si–O films at P tot =0.6kPa, whereas rounded cauliflower-like grains grew at P tot =7.5kPa. The R dep increased with increasing P L and T dep and reached a maximum of 430μmh− 1 at P tot =0.6kPa, P L =186W and T dep =1310K. [Copyright &y& Elsevier]

Abstract: CeO2 films were prepared on LaMnO3/MgO/Gd2Zr2O7 multi-coated Hastelloy C276 tapes by laser chemical vapor deposition at different laser power (P L) from 46 to 101W. Epitaxial (100) CeO2 films were prepared at P L =46–93W (deposition temperature, T dep =705–792K). Epitaxial CeO2 films had rectangular-shaped grains at P L =46–77W (T dep =705–754K), while square-shaped grains were obtained at P L =85–93W (T dep =769–792K). CeO2 films showed a columnar microstructure. Epitaxial (100) CeO2 films with rectangular grains exhibited full width at half maximum of ω-scan on (200) reflection and ϕ-scan on (220) reflection of 3.4–3.2° and 6.0–7.2°, respectively. The deposition rate of the epitaxial (100) CeO2 films had a maximum of 4.6μmh−1 at P L =77W (T dep =754K). [Copyright &y& Elsevier]

Abstract: SiC films were prepared by laser chemical vapor deposition using a CO2 laser (maximum laser power: 245W) with HMDS (hexamethyldisilane) precursor and the effects of deposition conditions on the phase, microstructure and deposition rate were investigated. At pre-heating temperature of 323K and laser power (P L) above 119W (deposition temperature (T dep) above 1410K), (111)-oriented 3C SiC (β-SiC) films were obtained. With increasing T dep, the microstructure of these SiC films changed from glass-like (T dep <1460K) to cauliflower-like (T dep =1460–1560K) to granular (T dep >1560K). Conical facets formed on the surface of granular SiC films at around T dep =1650K. The deposition rate (R dep) of SiC films showed a maximum at T pre =473K and P L =119W (T dep =1490K) and reached 2200μmh−1. [Copyright &y& Elsevier]

Abstract: Al2O3 films were prepared at deposition temperatures (T dep) from 980 to 1230K by laser chemical vapor deposition (LCVD) using the continuous wave of a Nd:YAG laser with laser power (P L) up to 260W. γ-Al2O3 films were obtained at T dep <1100K, whereas α-Al2O3 films were obtained at T dep >1100K. γ-Al2O3 films were morphologically characterized by a cone-like structure, while α-Al2O3 films had hexagonal faceted grains. The highest deposition rate (R dep) of γ-Al2O3 film was 570μmh−1, while that of α-Al2O3 film was 250μmh−1. α-Al2O3 films in a single phase were obtained at 170K lower in T dep and 100 times higher in R dep than those by conventional thermal CVD. [Copyright &y& Elsevier]

Abstract: Alumina (Al2O3) films were prepared by metalorganic chemical vapor deposition using aluminum tri-acetylacetonate as a precursor. The effects of deposition conditions on film phase, microstructure, and deposition rate were investigated. γ-Al2O3 films were obtained at substrate temperatures ranging between 1173 and 1373K and total chamber pressures ranging between 400 and 1000Pa, whereas α-Al2O3 films incorporating a small amount of the γ phase were obtained at 1373K and 800Pa. Al2O3 films prepared at 1173K showed a halo in X-ray diffraction patterns, consistent with amorphous structures. However, TEM observations suggested that these films consisted of a nanocrystalline γ-Al2O3 phase containing trace amounts of carbon. [Copyright &y& Elsevier]

Abstract: We prepared Al2O3 films by laser chemical vapor deposition (LCVD) using a diode laser and aluminum acetylacetonate (Al(acac)3) precursors and investigated the effects of laser power (P L), deposition temperature (T dep), and total pressure (P tot) in a reaction chamber on the crystal phase, microstructure, and deposition rate (R dep). An amorphous phase was obtained at P L =50W, whereas an α-phase was obtained at P L >100W. At P L =150 and 200W (104)- and (012)-oriented α-Al2O3 films were obtained, respectively. The R dep of α-Al2O3 films increases with decreasing P L and P tot. Single-phase α-Al2O3 film was obtained at T dep =928K, which is about 350K lower than that obtained by conventional thermal CVD using Al(acac)3 precursor. [Copyright &y& Elsevier]

Abstract: Dense, dendritic and porous SiO2 films were prepared by laser chemical vapor deposition (LCVD) using a high-power continuous-wave mode Nd: YAG laser (206W) and a TEOS (tetraethyl orthosilicate) precursor. The effects of laser power (P L) and total chamber pressure (P tot) on the microstructure and deposition rate (R dep) were investigated. Amorphous SiO2 films were obtained independent of P L and P tot. Flame formation was observed between the nozzle and the substrate at P L >160W and P tot >15kPa. At P L =206W, dense, dendritic and porous SiO2 films were obtained at P tot <20kPa, P tot =23kPa and P tot >25kPa, respectively. The R dep increased thousands of times under flame formation conditions, the highest R dep being reached at 1200μmh−1, 22,000μmh−1 and 28,000μmh−1 for the dense, dendritic and porous SiO2 films, respectively. [Copyright &y& Elsevier]

Abstract: α-Al2O3 films were prepared by laser chemical vapor deposition (LCVD) and the effects of precursor vaporization temperature (T vap), total chamber pressure (P tot), laser power (P L) and deposition temperature (T dep) on the phase, orientation and texture of Al2O3 film were investigated. At P tot =0.93kPa, α-Al2O3 films were obtained in the region of T vap >423K and T dep >1100K. The orientation of α-Al2O3 film changed from (110) to (012) to (104) to (006) with increasing P tot. Porous α-Al2O3 films were formed at high T vap (443K) and low P tot (0.47kPa). At T vap =413K, α-Al2O3 film had hexagonal and rectangular plate-like grains with finely faceted edges. With increasing P tot =0.93–1.4kPa, (006)-oriented α-Al2O3 film with a hexagonal terrace texture was obtained. [Copyright &y& Elsevier]

Abstract: SrRuO3 (SRO), BaRuO3 (BRO) and CaRuO3 (CRO) thin films prepared by laser ablation in a wide range of deposition conditions were investigated on the relationship between deposition conditions, phase formation, microstructure and electrical conductivity. The optimum conditions for preparing highly conductive thin films were investigated. SRO, CRO and BRO thin films were crystallized with pseudo-cubic SRO and CRO, and a 9R-type hexagonal BRO structure, respectively. SRO and BRO thin films were crystallized with fine grains, whereas rectangular-shaped island grains tended to grow on the CRO thin films. The electrical conductivity of SRO and BRO thin films increased with an increase in deposition temperature of substrate and an increase in oxygen pressure, meanwhile, in CRO thin films, only the CRO thin film with a continuous surface of connected grains exhibited metallic conduction. However, the electron conduction transition from semi-conducting behavior to metallic conduction occurred when σ of 104 Sm−1 was reached independent of alkaline earth metal and microstructure. The optimum conditions were T sub =773 to 973K and to 13Pa. [Copyright &y& Elsevier]

Abstract: (001) SrRuO3 (SRO), (001) CaRuO3 (CRO) and (205) BaRuO3 (BRO) thin films were epitaxially grown on (001) LaAlO3 substrates by laser ablation, and the effect of lattice matching on the microstructure and electrical conductivity was investigated. (001) SRO and (001) CRO thin films had a terrace with orthogonal step structure, whereas (205) BRO thin film had an orthogonal structure with tetragonal grains. Epitaxial thin films showed metallic conduction, and the (001) CRO thin films exhibited the highest electrical conductivity, i.e. 1.5×105 S m−1, among the (001) SRO, (001) CRO and (205) BRO thin films. The smaller misfit between thin film and substrate could be associated with the higher electrical conductivity. [Copyright &y& Elsevier]

Abstract: (001)-oriented α-Al2O3 films were prepared on polycrystalline AlN substrates by laser chemical vapor deposition at deposition temperatures of 1373–1455K. The (001) orientation degree increased from 36% to 90% with increasing vaporization temperature of the Al precursor from 438 to 453K; the deposition rate also increased from 82 to 175μmh−1. The (001)-oriented α-Al2O3 films exhibited columnar growth, and hexagonal terraces of α-Al2O3 (001) plane were observed on the surface. [Copyright &y& Elsevier]

Abstract: We demonstrated the first successful fabrication of a transparent Lu3NbO7 body by spark plasma sintering (SPS). First, Lu3NbO7 powder was synthesized by a solid-state reaction of Lu2O3 and Nb2O5 powders at 1473K for 7.2ks and was sintered by SPS at 1723K for 2.7ks. The transparent Lu3NbO7 body had a cubic defect-fluorite structure and uniform microstructure with an average grain size of 0.77μm. The transmittance at 550nm reached 68%. [Copyright &y& Elsevier]

Abstract: Rhodium-nanoparticle-dispersed zirconia (Rh/ZrO2) films were prepared by laser chemical vapor deposition using Rh and Zr dipivaloylmethanate precursors. The effects of deposition conditions and heat treatment on the microstructures of ZrO2 and Rh/ZrO2 films were investigated. At a deposition temperature of 1180K and a Rh to Zr source molar ratio (R Rh/Zr) of 0.05, Rh nanoparticles precipitated on the surface of a (020)-oriented ZrO2 matrix having a feather-like structure. The diameter of the Rh nanoparticles increased from 25 to 70nm as R Rh/Zr increased from 0.01 to 0.10. The microstructure of the Rh nanoparticles and the feather-like structure of the ZrO2 matrix were unchanged after heat treatment at 873K in air for 10h. [Copyright &y& Elsevier]

Abstract: SiC–SiO2 nanocomposite films were prepared by laser chemical vapor deposition (LCVD) using a CO2 laser with tetraethyl orthosilicate (TEOS) and acetylene (C2H2) as precursors. The effects of laser power on the crystal phase and microstructure of the SiC–SiO2 nanocomposite films were investigated. Films produced with laser power below 150W (below 1523K) had an amorphous structure, while those produced above 200W (above 1673K) were a mixture of crystalline SiC and amorphous phase. At 245W (1774K) the film contained 3C-SiC nanocrystals 100 to 200nm in diameter dispersed in an amorphous matrix having high-density stacking faults formed on the (1̄1̄1̄) and (111̄) planes. [ABSTRACT FROM AUTHOR]

In this work, we report the preparation of nanostructured NaTaO 3 and SrTiO 3 thin films on stainless steel substrates by laser assisted chemical vapor deposition (LCVD) and their application as photocatalysts for hydrogen evolution under UV light. The effect of the deposition conditions on the compositions and microstructures of the materials is discussed, and an integral study of the influence of the structural, morphological, optical and photoelectrochemical properties of the films on their catalytic activities for hydrogen production is presented through X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–vis diffuse reflectance spectroscopy (DRS), photoluminescence spectroscopy (PL) and electrochemical impedance spectroscopy (EIS) analyses. The LCVD process allows for the growth of films with attractive microstructures for photocatalytic applications, leading to a roof-like morphology in the case of orthorhombic NaTaO 3 and a cauliflower-like morphology for cubic SrTiO 3 , which promote an enhanced charge separation and transference process and a higher photocatalytic efficiency compared to the photocatalysts prepared as powders. Orthorhombic NaTaO 3 exhibits a hydrogen evolution rate of 5672 μmol g −1 h −1 , and SrTiO 3 generates only 494 μmol g −1 h −1 , which are significantly higher than the activities of the materials prepared as powders. This improvement is attributed to the microstructure of the films prepared by LCVD and their superior optical, structural and photoelectrochemical properties. The results of the evaluation of the catalytic activity of the films prepared in this work by LCVD demonstrate the attainment of stable photocatalysts with a competitive performance compared to similar materials prepared by alternative methods. [ABSTRACT FROM AUTHOR]