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Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique on silicon substrates at substrate temperature of 400 °C. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod) 3 ), (2,7,7-trimethyl-3,5-octanedionate) zirconium (known as Zr(tod) 4 ), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assisted MOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far. The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAX and spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer while tribological property measurement has been done to study mechanical behavior of the coatings. Characterization by different techniques indicates that properties of the films are dependent on the yttria content as well as on the structure of the films. [ABSTRACT FROM AUTHOR]

Highlights: [•] Yttrium oxide thin films are deposited by RF Plasma MOCVD Process using Y(thd)3 precursor. [•] Films are deposited under varying influence of RF self-bias on the substrates during deposition (−50V to −175V). [•] It is possible to deposit single phase cubic Y2O3 films at low substrate temperature. [•] RF bias on substrate controls the texture of deposited film. [•] To the best of our knowledge, so far there is no reported study on the effect of RF substrate bias on properties of films. [ABSTRACT FROM AUTHOR]