1. Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy.
- Author
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Ge, Xiaotian, Wang, Dengkui, Gao, Xian, Fang, Xuan, Niu, Shouzhu, Gao, Hongyi, Tang, Jilong, Wang, Xiaohua, Wei, Zhipeng, and Chen, Rui
- Subjects
QUANTUM wells ,MOLECULAR beam epitaxy ,GALLIUM arsenide ,EMISSIONS (Air pollution) ,PHOTOLUMINESCENCE ,TEMPERATURE - Abstract
As an important candidate for novel infrared semiconductor lasers, the optical properties of GaAsSb-based multiple quantum wells (MQWs) are crucial. The temperature- and excitation power-dependent photoluminescence (PL) spectra of the GaAs
0.92 Sb0.08 /Al0.2 Ga0.8 As MQWs, which were grown by molecular beam epitaxy, were investigated and are detailed in this work. Two competitive peaks were observed from 40 K to 90 K. The peak located at the low-energy shoulder was confirmed to be localized states emission (LE) and the high-energy side peak was confirmed to be free-carrier emission by its temperature-dependent emission peak position. It is observed that the LE peak exhibited a blueshift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. Our studies have great significance for application of GaAsSb-based MQWs in infrared semiconductor lasers. [ABSTRACT FROM AUTHOR]- Published
- 2017
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