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Abstract: A detailed characterization and modeling of the low frequency noise in a CMOS inverter is presented for the first time. A low frequency noise model for the load current and the output voltage is developed based on the carrier number fluctuations scheme. This model allows obtaining a consistent description of the noise characteristics of CMOS inverters issued from a 45nm bulk CMOS technology. It should constitute a reliable theoretical framework for further analysis of the impact of time fluctuations on the static and dynamic operation of CMOS inverter based circuits. [Copyright &y& Elsevier]

Low-frequency noise (LFN) of high-k/metal stack nMOS and pMOS transistors is experimentally studied. Results obtained on 32-nm complementary metal–oxide–semiconductor (CMOS) technologies, including LFN spectra and normalized power spectral density data analysis, are presented. These results indicate that the carrier number fluctuation is the main noise source for both nMOS and pMOS devices. As noise performance may strongly vary between different devices on one chip, the variability of the LFN when scaling down devices was also evaluated. A model known in the literature was used and enhanced in order to understand the noise level variability. A statistical analysis of the noise variability is also presented showing the dependence of the standard deviation with the device area. The comparison with former results from 45-nm poly/SiON technology demonstrates a better control of noise variability in the 32-nm CMOS technology. [ABSTRACT FROM PUBLISHER]

Low-frequency noise is for the first time investigated in 0.12 μm Partially Depleted (PD) Silicon-On-Insulator (SOI) N-MOSFETs in comparison with established results on the 0.25 μm SOI CMOS technology node. The transfer and output characteristics of the devices are first addressed as well as an evaluation of the static performances. Then, we present low-frequency noise measurements carried out in both linear and saturation regimes taking into consideration the usually admitted 1/f noise models in MOS devices and their applicability in our case. A comparison is achieved with previously published results on 0.25 μm PD SOI N-MOSFETs, showing the drain current noise spectral densities, as well as the Kink-related excess noise occurring in the saturation regime. [Copyright &y& Elsevier]

Investigates the low frequency noise behavior in fully depleted SOI/metal oxide semiconductor transistors in both ohmic and saturation regimes. Data on static measurements in the ohmic and saturation regimes; Noise in the saturation regime for SOI transistors.

This work presents an investigation of DC and Low Frequency Noise dispersion in 0.13 μm SiGe:C BiCMOS Heterojunction Bipolar Transistors (HBTs) used for mm-Wave to Terahertz applications. Therefore, DC and Low Frequency Noise measurements have been performed over a half wafer on a large number of transistors. A statistical 1/ f noise compact model is presented as well as a study of the repartition of generation-recombination components. The main Low Frequency Noise sources are found to be homogenously distributed in the intrinsic base-emitter junction. The mean 1/ f noise level, evaluated by the figure of merit K Bmean , is equal to 6 10 −10 μm 2 . [ABSTRACT FROM AUTHOR]