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All-inorganic perovskite solar cells (PSCs) with inverted p-i-n configuration have not yet reached the high efficiency achieved in the normal n-i-p architecture. However, the inverted all-inorganic PSC are more compatible with the fabrication of tandem solar cells. In this work, a theoretical study of all-inorganic PSCs with inverted structure ITO/HTL/CsPbIxBr3−x/ETL/Ag, has been performed by means of computer simulation. Four p‐type inorganic materials (NiO, Cu2O, CuSCN and CuI) and three n-type inorganic materials (ZnO, TiO2 and SnO2) were used as hole and electron transport layers (HTL and ETL), respectively. A band gap of 1.78 eV was used for the CsPbI x Br3−x perovskite layer. The simulation results allow identifying that CuI and ZnO are the most appropriate materials as HTL and ETL, respectively. Additionally, optimized values of thickness, acceptor density and defect density in the absorber layer have been obtained for the ITO/CuI/CsPbI x Br3−x /ZnO/Ag, from which, an optimum efficiency of 21.82% was achieved. These promising theoretical results aim to improve the manufacturing process of inverted all-inorganic PSCs and to enhance the performance of perovskite–perovskite tandem solar cells.

The electrical parameters degradation of n-type GaAs solar cells exposed to radiation from high-energy particles has been analyzed by means of computer simulation. Specifically, the radiation damage caused by electron upon the diffusion and recombination currents and the series resistance of the solar cells with different base carrier concentrations have been researched using the NRL method, the PC1D program and a home-made numerical code based on genetic algorithms. Results obtained are useful to predict the behavior of these devices under extreme operating conditions.

An iterative method based on numerical simulations was developed to enhance the proton radiation tolerance and the responsivity of Si PIN photodiodes. The method allows to calculate the optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total reverse current of the photodiode and maximize its response to light. The implementation of the method is useful in the design of devices whose operation point should not suffer variations due to radiation.

This paper presents a theoretical study about quantum dot solar cells by means of numerical simulations, considering different doping levels in the intrinsic region of the cells, with the aim of evaluating the effect on the device's power conversion efficiency. Results of simulations performed over GaAs solar cells with InAs quantum dots, based on two different fabrication processes, are reported. The donor doping density in the intrinsic region was ranged from 1013 to 1017 cm-3. It is shown that, for a doping level of 7×1015 cm-3, the contribution of larger sized quantum dots to the photocurrent is increased by 50%, a very promising result in the search for new designs with higher efficiencies. Fil: Cedola, Ariel Pablo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de la Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; Argentina Fil: Gioannini, Mariangela. Politecnico di Torino; Italia Fil: Cappelluti, Federica. Politecnico di Torino; Italia Fil: Cappelletti, Marcelo Ángel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de la Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; Argentina Fil: Peltzer y Blanca, Eitel Leopoldo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de la Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; Argentina

The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below 4 × 1015 cm−2 has been analyzed by means of a computer simulation. The numerical simulations have been carried out using the onedimensional device modeling program PC1D. The effects of the base and emitter carrier concentrations of the p- and n-type GaAs structures on the maximum power point have been researched using a radiative recombination lifetime, a damage constant for the minority carrier lifetime and carrier removal rate models. An analytical model has been proposed, which is useful to either determine the maximum exposure time or select the appropriate device in order to ensure that the electrical parameters of different GaAs sub-cells will have a satisfactory response to radiation since they will be kept above 80% with respect to the non-irradiated values. Fil: Cappelletti, Marcelo Ángel. Universidad Nacional Arturo Jauretche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina Fil: Cedola, Ariel Pablo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina Fil: Peltzer y Blanca, Eitel Leopoldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina

A theoretical study of the electrical performance of p-on-n GaAs sub-cells under AM0, irradiated with 1 MeV electrons, has been carried out by means of computer simulation. Effects of both base and emitter carrier concentration upon radiation resistance of these devices have been researched. From analysis it is possible to determine the highest electron fluence to which the electrical parameters of the solar cell, with well-known base and emitter carrier concentrations, are reduced simultaneously in less than 20% from their non-irradiated values. Results presented in this paper are important in order to contribute to the design of radiation-hardened devices.

In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications. Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Casas, Guillermo. Universidad Nacional de La Plata; Argentina. Universidad Nacional de Quilmes; Argentina Fil: Cedola, Ariel Pablo. Universidad Nacional de La Plata; Argentina Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina

In this paper, a theoretical study of the electrical parameters degradation of different n-type GaAs sub-cells for InGaP/GaAs/Ge triple junction solar cells irradiated with 1 and 5 MeV electrons has been performed by means of computer simulation. Effects of base carrier concentration upon the maximum power point, short-circuit current, open circuit voltage, diffusion current, recombination current and series resistance of these devices have been researched using the displacement damage dose method, the one-dimensional PC1D device modeling program and a home-made numerical code based on genetic algorithms. The radiative recombination lifetime, damage constant for minority-carrier lifetime and carrier removal rate models for GaAs sub-cells have been used in the simulations. An analytical model has been proposed, which is useful to describe the radiation-induced degradation of diffusion current, recombination current and series resistance. Results obtained in this work can be used to predict the radiation resistance of solar cells over a wide range of energies. Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional Arturo Jauretche; Argentina Fil: Casas, Guillermo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Universidad Nacional de Quilmes; Argentina Fil: Morales, Daniel Martin. Universidad Nacional Arturo Jauretche; Argentina Fil: Hasperué, Waldo. Universidad Nacional Arturo Jauretche; Argentina. Universidad Nacional de La Plata. Facultad de Informática. Instituto de Investigación en Informática Lidi; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina

An iterative method applied to enhance the proton radiation tolerance and the responsivity of PIN photodiodes was developed. The method allows to calculate optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total reverse current of the photodiode and maximize its response to light. The implementation of the method is useful in the design of devices that will not suffer variations from its operation point due to radiation.

In the present work, a complete numerical analysis of the influence of deep-trap levels on the dark current of silicon PIN photodiodes under 1 MeV neutron radiation was done. Results corroborate that energy levels near the mid-gap affect to a great extent the dark current. Radiation tolerances of undoped and gold-doped devices were compared through simulations. It has been concluded that gold in silicon reduces the neutron-induced damage. Finally, a model to calculate the dark current of irradiated devices doped with deep-impurities is presented.

This work focuses on study of radiation induced displacement damage effects on silicon PIN photodiodes at both, dark and illumination conditions, by mean of numerical simulations. For fluences greater than a certain limiting value, relation between photocurrent and dark current decreases below ten, leading to an undesirable device operation. An iterative method is proposed for design optimization of PIN photodiodes to be used under irradiation, that minimize radiation effects on total reverse current and maximize device response to incident light.

A computer program for the simulation of semiconductor devices has been developed and applied to the analysis of radiation effects on Si PIN photodiodes. The study has allowed the authors to propose useful analytical models related to such optical and electrical device parameters as peak spectral response and dark current. Peak spectral response has shown a marked dependence on device layers dimensions. Dark current has demonstrated linear increase with intrinsic layer length and proton-radiation fluence. But the most important obtained result has been the determination of a particular set of semiconductor P-, I- and N-layer thicknesses, for given values of total device length and incident light intensity, that minimize radiation effects during photodiode operation in space environments up to high particle fluences.