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Effectively atomically flat interfaces over a macroscopic area (“(411)A super-flat interfaces”) were successfully achieved in In0.53Ga0.47As/In0.52Al0.48As quantum wells (QWs) grown on (411)A InP substrates by molecular beam epitaxy (MBE) at a substrate temperature of 570°C and V/III=6. Surface morphology of the In0.53Ga0.47As/In0.52Al0.48As QWs was smooth and featureless, while a rough surface of those simultaneously grown on a (100) InP substrate was observed. Photoluminescence (PL) linewidths at 4.2 K from the (411)A QWs with well width of 0.6–12 nm were 20–30 % narrower than those grown on a (100) InP substrate and also they are almost as narrow as each of split PL peaks for those of growth-interrupted QWs on a (100) InP substrate. In the case of the (411)A QWs, only one PL peak with very narrow linewidth was observed from each QW over a large distance (7 mm) on a wafer.

Pseudomorphic In0.04Ga0.96As/Al0.3Ga0.7As quantum wells (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A In0.04Ga0.96As ternary substrates by MBE at growth temperature of Ts= 520°C. The interface flatness of the QWs was characterized by photoluminescence at 4.2 K. Extremely flat interfaces have been realized in the QWs on the (411)A InGaAs substrates, which is better or sometimes much better than In0.04Ga0.96As/Al0.3Ga0.7As QWs grown on (100) In0.04Ga0.96As alloy substrates, (411)A and (100) GaAs substrates, indicating high application potential of (411)A InGaAs alloy substrates.

In this paper, we present a novel cell counting method accomplished using a single-cell array fabricated on an image sensor, complementary metal oxide semiconductor sensor. The single-cell array was constructed using a microcavity array, which can trap up to 7,500 single cells on microcavities periodically arranged on a plane metallic substrate via the application of a negative pressure. The proposed method for cell counting is based on shadow imaging, which uses a light diffraction pattern generated by the microcavity array and trapped cells. Under illumination, the cell-occupied microcavities are visualized as shadow patterns in an image recorded by the complementary metal oxide semiconductor sensor due to light attenuation. The cell count is determined by enumerating the uniform shadow patterns created from one-on-one relationships with single cells trapped on the microcavities in digital format. In the experiment, all cell counting processes including entrapment of non-labeled HeLa cells from suspensions on the array and image acquisition of a wide-field-of-view of 30 mm(2) in 1/60 seconds were implemented in a single integrated device. As a result, the results from the digital cell counting had a linear relationship with those obtained from microscopic observation (r(2) = 0.99). This platform could be used at extremely low cell concentrations, i.e., 25-15,000 cells/mL. Our proposed system provides a simple and rapid miniaturized cell counting device for routine laboratory use.

A complementary metal oxide semiconductor (CMOS) image sensor was applied to high-content analysis of single cells which were assembled closely or directly onto the CMOS sensor surface. The direct assembling of cell groups on CMOS sensor surface allows large-field (6.66 mm×5.32 mm in entire active area of CMOS sensor) imaging within a second. Trypan blue-stained and non-stained cells in the same field area on the CMOS sensor were successfully distinguished as white- and blue-colored images under white LED light irradiation. Furthermore, the chemiluminescent signals of each cell were successfully visualized as blue-colored images on CMOS sensor only when HeLa cells were placed directly on the micro-lens array of the CMOS sensor. Our proposed approach will be a promising technique for real-time and high-content analysis of single cells in a large-field area based on color imaging.

Pseudomorphic In x Ga1-x As/Al0.28Ga0.72As (x = 0.085–0.15) quantum wells (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A and (100) GaAs substrates at a temperature (T s) of 520°C by molecular beam epitaxy (MBE). The interface flatness of the QWs was characterized by photoluminescence (PL) at 4.2 K. PL linewidths of the narrow (411)A QWs (L w = 2.4 nm) with x = 0.085 and 0.15 were 7.3 meV which is approximately 30–40% smaller than those of the (100) QWs, indicating that extremely flat interfaces over a macroscopic area [(411)A super-flat interfaces] have been realized in the pseudomorphic In x Ga1-x As/Al0.28Ga0.72As QWs (up to x = 0.15) grown on the (411)A GaAs substrates, similar to lattice-matched GaAs/Al x Ga1-x As QWs grown on (411)A GaAs substrate previously reported.

Effectively atomically flat interfaces over a macroscopic area (super-flat interfaces) have been achieved in pseudomorphic In x Ga1-x As/Al0.3Ga0.7As (x = 0.0, 0.04, 0.07) quantum wells (QWs) with well widths (L w) of 1.2–11.8 nm grown on (411)A GaAs substrates at 520°C by molecular beam epitaxy (MBE). A single, sharp photoluminescence (PL) peak was observed for each QW over the large area of the wafer (8 mm ×5 mm). The linewidths for narrow QWs (L w = 2.4 nm) were 8.9 meV (x = 0.04) and 9.9 meV (x = 0.07) at 4.2 K, which were about 30% smaller than those of QWs simultaneously grown on conventional (100) GaAs substrates.

GaAs/Al0.3Ga0.7As tilted T‐shaped quantum wires (T‐QWRs) were fabricated by growing Al0.3Ga0.7As/GaAs (well thickness of GaAs Lw=4.4 nm) on a (111)B facet plane that was formed when a GaAs/Al0.3Ga0.7As multi‐quantum well (MQW) layer (Lw=4.5 nm) was grown on a reverse‐mesa etched GaAs(100) substrate by glancing‐angle molecular beam epitaxy (GA‐MBE). Growth conditions of the tilted T‐QWR were optimized, and full width at half‐maximum (FWHM) of a cathodoluminescence (CL) peak from the tilted T‐QWRs was reduced down to 19 meV at 78 K, which is about one‐third of that (61 meV) of previous GaAs/Al0.3Ga0.7As tilted T‐QWRs.