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Organic light-emitting electrochemical cells (LEC) are promising for lighting applications but in many cases these devices suffer from unbalanced electrochemical doping, which cause instability and degradation of the cells. A predominant p-doping over n-doping causes an off-centered emissive p–n junction, which leads to poor power-conversion efficiency. Here, we report a half-gate LEC transistor (HG-LECT), in which an ion-conductive gate made from poly(3,4-ethylenedioxythiophene)-poly-(styrenesulfonate) is employed to combat this instability problem. The gate material, covering half of the channel, is used to enhance the n-doping process in this part by employing an appropriate operation protocol. We demonstrate a centered light emission zone, closely following the geometry of the gate configuration. The HG-LECT with centered emission profile is shown to be more efficient than the corresponding LEC without the gate electrode, and its n-doping level is measured to be 15%. [ABSTRACT FROM AUTHOR]

In conventional light-emitting electrochemical cells (LECs), an off-centered p–n junction is one of the major drawbacks, as it leads to exciton quenching at one of the charge-injecting electrodes and results in performance instability. To combat this problem, we have developed a new device configuration, the double-gate light-emitting electrochemical transistor (DG-LECT), in which the location of the light-emitting p–n junction can be precisely defined via the position of the two gate terminals. Based on a planar LEC structure, two gate electrodes made from an electrochemically active conducting polymer are employed to predefine the p- and n-doped area of the light-emitting polymer. Thus, a p–n junction is formed in between the p-doped and n-doped regions. We demonstrate a homogeneous and centered p–n junction as well as other predefined junction patterns in these DG-LECT devices. Additionally, we report an electrical model that explains the operation of the DG-LECTs. The DG-LECT device provides a new tool to study the fundamental physics of LECs, as it dissects the key working process of LEC into decoupled p-doping, n-doping, and electroluminescence. [ABSTRACT FROM AUTHOR]