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We present an experimental study of the influence of excitonic broadening on the strong-coupling regime in a bulk-ZnO microcavity. At room temperature, the strong coupling is highlighted using both angle-resolved reflectivity and photoluminescence measurements; a Rabi splitting value of 40 meV is determined. The polaritonic behavior is also evidenced at low temperature, even if a bulklike reflectivity signature is observed in the excitonic range. Using transfer-matrix calculations, this phenomenon is explained through the influence of the huge excitonic absorption whose contribution depends on the broadening value. Finally, we demonstrate that this effect should not prevent a lasing from the polaritons. [ABSTRACT FROM AUTHOR]

The carrier recombination processes and the relaxation dynamics of spin-polarized excitons in cubic epitaxial GaN have been investigated by time-resolved photoluminescence and pump-probe spectroscopy experiments. We evidence a very fast exciton spin relaxation τS∼0.3 ps that is influenced by both the high defect concentration and the strong electron-hole exchange interaction. Spectral oscillatory features of the transient reflectivity are observed for negative delays that allow us to determine the exciton optical dephasing time T2. [ABSTRACT FROM AUTHOR]

We investigate exciton dynamics in WSe2 bilayers in time-resolved photoluminescence (PL) spectroscopy. Fast PL emission times are recorded for both the direct exciton with τD ≲ 3 ps and the indirect optical transition with τI ≈ 25 ps. For temperatures between 4 to 150K τI remains constant. Following polarized laser excitation, we observe for the direct exciton transition at the K point of the Brillouin zone efficient optical orientation and alignment during the short emission time τD. The evolution of the direct exciton polarization and intensity as a function of excitation laser energy is monitored in PL excitation experiments. [ABSTRACT FROM AUTHOR]

In monolayer MoS2, optical transitions across the direct band gap are governed by chiral selection rules, allowing optical valley initialization. In time-resolved photoluminescence (PL) experiments, we find that both the polarization and emission dynamics do not change from 4 to 300 K within our time resolution. We measure a high polarization and show that under pulsed excitation the emission polarization significantly decreases with increasing laser power. We find a fast exciton emission decay time on the order of 4 ps. The absence of a clear PL polarization decay within our time resolution suggests that the initially injected polarization dominates the steady-state PL polarization. The observed decrease of the initial polarization with increasing pump photon energy hints at a possible ultrafast intervalley relaxation beyond the experimental ps time resolution. By compensating the temperature-induced change in band gap energy with the excitation laser energy, an emission polarization of 40% is recovered at 300 K, close to the maximum emission polarization for this sample at 4 K. [ABSTRACT FROM AUTHOR]

We report on the selective creation of spin filtering regions in non-magnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We demonstrate by photoluminescence spectroscopy that spin dependent recombination (SDR) ratios as high as 240% can be achieved in the implanted areas. The optimum implantation conditions for the most efficient SDR are determined by the systematic analysis of different ion doses spanning four orders of magnitude. The application of a weak external magnetic field leads to a sizable enhancement of the SDR ratio from the spin polarization of the nuclei surrounding the polarized implanted paramagnetic defects. [ABSTRACT FROM AUTHOR]

852-nm emitting Al-free laser diodes and layers constituting the device are irradiated with 1-MeV electrons at fluences ranging from 1014 up to 1016 e-/cm² . Layers corresponding to the laser diodes materials were characterised using photoluminescence and time resolved photoluminescence. Laser diodes L-I-V characteristics were measured in pulsed and continuous regime. [ABSTRACT FROM AUTHOR]

The strong coupling regime in a ZnO microcavity is investigated through room temperature photoluminescence and reflectivity experiments. The simultaneous strong coupling of excitons to the cavity mode and the first Bragg mode is demonstrated at room temperature. The polariton relaxation is followed as a function of the excitation density, showing a nonthermal polariton distribution. A relaxation bottleneck is evidenced in the Bragg-mode polariton branch. It is partly broken under strong excitation density, so that the emission from this branch dominates the one from cavity-mode polaritons. [ABSTRACT FROM AUTHOR]

Abstract: The exciton spin alignment is measured in an ensemble of self-organized cubic GaN/AlN quantum dots. By picosecond time-resolved photoluminescence experiments, we show that the exciton linear polarization does not decay with time from 20 to 300K. [Copyright &y& Elsevier]

A process route for the fabrication of solvent-redispersible, surfactant-free Cu2ZnSnS4 (CZTS) nanoparticles has been designed with the objective to have the benefit of a simple sulfide source which advantageously acts as (i) a complexing agent inhibiting crystallite growth, (ii) a surface additive providing redispersion in low ionic strength polar solvents and (iii) a transient ligand easily replaced by an carbon-free surface additive. This multifunctional use of the sulfide source has been achieved through a fine tuning of ((Cu2+)a(Zn2+)b(Sn4+)c(Tu)d(OH−)e)t+, Tu = thiourea) oligomers, leading after temperature polycondensation and S2− exchange to highly concentrated (c > 100 g l−1), stable, ethanolic CZTS dispersions. The good electronic properties and low-defect concentration of the sintered, crack-free CZTSe films resulting from these building blocks was shown by photoluminescence investigation, making these building blocks interesting for low-cost, high-performance CZTSe solar cells. [ABSTRACT FROM AUTHOR]

Optical interband transitions in monolayer transition metal dichalcogenides such as WSe2 and MoS2 are governed by chiral selection rules. This allows efficient optical initialization of an electron in a specific K valley in momentum space. Here we probe the valley dynamics in monolayer WSe2 by monitoring the emission and polarization dynamics of the well-separated neutral excitons (bound electron-hole pairs) and charged excitons (trions) in photoluminescence. The neutral exciton photoluminescence intensity decay time is about 4 ps, whereas the trion emission occurs over several tens of ps. The trion polarization dynamics shows a partial, fast initial decay within tens of ps before reaching a stable polarization of ≈20%, for which a typical valley polarization decay time of the order of 1 ns can be inferred. [ABSTRACT FROM AUTHOR]

Excitonic parameters of ZnO have been determined from 5 to 300 K using the combination of time-integrated four-wave mixing, continuous wave reflectivity, autocorrelation of reflectivity at the femtosecond scale, and photoluminescence spectroscopy. These techniques allow an accurate determination of both inhomogeneous and homogeneous linewidths, oscillator strength, and other parameters characteristic for excitonic resonances. It turns out that, due to impurity-exciton scattering, the homogeneous damping of A and B excitons (0.55 and 1.35 meV, respectively) predominates over inhomogeneous one in high-quality ZnO at low temperature. Our data also prove that the strong exciton-phonon coupling enhances the excitonic broadening at room temperature up to 47 meV. This approach, which combines various sophisticated spectroscopy experiments, can be employed for an accurate determination of excitonic parameters in other semiconductor compounds and in any system where excitons are confined. [ABSTRACT FROM AUTHOR]

We study in detail self-assembled (In,Ga)As quantum dots grown on GaP substrate from the structural, theoretical, and optical points of view. Single quantum dot morphology is first determined at the atomic level using plane-view scanning tunneling microscopy. Unusual C2 symmetry properties with high-index {136} facets are demonstrated for small quantum dots, whereas the apparent shape of the quantum dots approximately exhibits C2vsymmetry, with the appearance of low-index {111} facets when the quantum dot ripens. This is interpreted as a consequence of the competition between strain and surface energy during quantum dot formation. Electronic properties are then simulated using both k?p and tight-binding models. The indium content and geometry of the quantum dots are found to have a strong influence on the transition type (direct-indirect). Finally, temperature-dependent optical properties of quantum dots are analyzed between 10 and 375 K. Photoluminescence and time-resolved photoluminescence studies show a clear proximity of two different types of optical transitions. Supported by the theoretical calculations, these transitions are interpreted as a competition between conduction band states in the χ and χ valleys. [ABSTRACT FROM AUTHOR]

In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis, we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly nonmonotonic, sign-changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. Our theory shows quantitatively that these surprising experimental results are due to magnetic-field-induced ±3/2 heavy-hole mixing, an inherent property of systems with C3v point-group symmetry. [ABSTRACT FROM AUTHOR]

The optical selection rules for interband transitions in WSe2, WS2, and MoSe2 transition metal dichalcogenide monolayers are investigated by polarization-resolved photoluminescence experiments with a signal collection from the sample edge. These measurements reveal a strong polarization dependence of the emission lines. We see clear signatures of the emitted light with the electric field oriented perpendicular to the monolayer plane, corresponding to an interband optical transition forbidden at normal incidence used in standard optical spectroscopy measurements. The experimental results are in agreement with the optical selection rules deduced from group theory analysis, highlighting the key role played by the different symmetries of the conduction and valence bands split by the spin-orbit interaction. These studies yield a direct determination of the bright-dark exciton splitting, for which we measure 40±1 meV and 55±2 meV in WSe2 and WS2 monolayer, respectively. [ABSTRACT FROM AUTHOR]