1. High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm.
- Author
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Graham, D. M., Dawson, P., Chabrol, G. R., Hylton, N. P., Zhu, D., Kappers, M. J., McAleese, C., and Humphreys, C. J.
- Subjects
PHOTOLUMINESCENCE ,INDIUM ,GALLIUM nitride ,QUANTUM wells ,MATERIALS science - Abstract
In this paper we report the design of high room temperature photoluminescence internal efficiency InGaN-based quantum well structures emitting in the near ultraviolet at 380 nm. To counter the effects of nonradiative recombination the quantum wells were designed to have a large indium fraction, high barriers, and a small quantum well thickness. To minimize the interwell and interbarrier thickness fluctuations we used Al
0.2 In0.005 Ga0.795 N barriers, where the inclusion of the small fraction of indium was found to lead to fewer structural defects and a reduction in the layer thickness fluctuations. This approach has led us to achieve, for an In0.08 Ga0.92 N/Al0.2 In0.005 Ga0.795 N multiple quantum well structure with a well width of 1.5 nm, a photoluminescence internal efficiency of 67% for peak emission at 382 nm at room temperature. [ABSTRACT FROM AUTHOR]- Published
- 2007
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