Search

The influence of a magnetic field on the triplet emission in Alq3 is determined by measuring the delayed electroluminescence (EL) and the phosphorescence in Alq3-based organic light-emitting diodes and amorphous films, respectively. The intensity of the instantaneous EL indicates an increase of up to +4.8% depending on the magnetic-field strength, which is because of the effect of the magnetic-field on the charge balance factor and thus on the injection of minority charge carriers.

Hybrid vertical architecture transistors are prepared, which has shown magnetic-field dependent electrical characteristics by using tris-(8-hydroxyquinoline) aluminum ([Alq.sub.3]), sulfonated polyaniline (SPAN), and n-type silicon. The rate of electrons that cross emitter and base layers and reach the collector is shown to be affected by the magnetic field, which has led to magnetic-field-dependent common-emitter current gain larger than 1.