1. Toward reliable MIS- and MOS-gate structures for GaN lateral power devices.
- Author
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Chen, Kevin J., Yang, Shu, Liu, Shenghou, Liu, Cheng, and Hua, Mengyuan
- Subjects
TRANSISTORS ,ELECTRIC potential ,THRESHOLD voltage ,TECHNOLOGICAL innovations ,TECHNOLOGICAL literacy ,SEMICONDUCTORS - Abstract
GaN power switching transistors featuring MIS- and MOS-gate structures are highly preferred over the Schottky-gate counterpart, because of suppressed gate leakage, enlarged gate swing, and more scalable threshold voltage. Nevertheless, MIS-/MOS-gate GaN devices are confronted with stability and reliability challenges, which arise from interface traps at the critical dielectric/III-nitride interface, as well as bulk traps inside the gate dielectric including border traps near the critical interface. In this work, we present several key techniques toward reliable MIS-/MOS-gate GaN power devices, including advanced interface engineering technology, gate structure optimizations for high-performance/stability normally-off GaN power transistors, and long-lifetime gate dielectric technology. Schematic cross sections of GaN-based MIS-HEMT and MOS-channel-HEMT. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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