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This study investigates the morphological changes induced by femtosecond (fs) laser pulses in arsenic trisulfide (As2S3) thin films and gold–arsenic trisulfide (Au\As2S3) heterostructures, grown by pulsed laser deposition (PLD). By means of a direct laser writing experimental setup, the films were systematically irradiated at various laser power and irradiation times to observe their effects on surface modifications. AFM was employed for morphological and topological characterization. Our results reveal a clear transition threshold between photoexpansion and photoevaporation phenomena under different femtosecond laser power regimes, occurring between 1 and 1.5 mW, irrespective of exposure time. Notably, the presence of a gold layer in the heterostructure minimally influenced this threshold. A maximum photoexpansion of 5.2% was obtained in As2S3 films, while the Au\As2S3 heterostructure exhibited a peak photoexpansion of 0.8%. The study also includes a comparative analysis of continuous-wave (cw) laser irradiation, confirming the efficiency of fs laser pulses in inducing photoexpansion effects. [ABSTRACT FROM AUTHOR]

Active semiconductor layers of TiO2 were synthesized via pulsed laser deposition in He, N2, O2, or Ar to manufacture DSSC structures. As-prepared nanostructured TiO2 coatings grown on FTO were photosensitized by the natural absorption of the N719 (Ruthenium 535-bis TBA) dye to fabricate photovoltaic structures. TiO2 photoanode nanostructures with increased adsorption areas of the photosensitizer (a combination with voluminous media) were grown under different deposition conditions. Systematic SEM, AFM, and XRD investigations were carried out to study the morphological and structural characteristics of the TiO2 nanostructures. It was shown that the gas nature acts as a key parameter of the architecture and the overall performance of the deposited films. The best electro-optical performance was reached for photovoltaic structures based on TiO2 coatings grown in He, as was demonstrated by the short-circuit current (Isc) of 5.40 mA, which corresponds to the higher recorded roughness (of 44 ± 2.9 nm RMS). The higher roughness is thus reflected in a more efficient and deeper penetration of the dye inside the nanostructured TiO2 coatings. The photovoltaic conversion efficiency (η) was 1.18 and 2.32% for the DSSCs when the TiO2 coatings were deposited in O2 and He, respectively. The results point to a direct correlation between the electro-optical performance of the prepared PV cells, the morphology of the TiO2 deposited layers, and the crystallinity features, respectively. [ABSTRACT FROM AUTHOR]

Pulsed Laser Deposition was employed in [[3]] to synthesize active semiconductor TiO SB 2 sb bilayers, as photoanode structures in the fabrication of dye-sensitized solar cells. Since its introduction several decades ago, Pulsed Laser Deposition (PLD), has proved to be a powerful technique for synthesizing a broad spectrum of functional thin films. Matrix-assisted pulsed laser evaporation (MAPLE) is a complementary deposition technique derived from PLD, extensively explored for the deposition of thin organic nanoparticle and composite coatings. [Extracted from the article]

A composite material with applications in optoelectronics has been investigated. Pulsed laser deposition CdSe-doped glass film was prepared by the combinatorial deposition from two targets, namely pure CdSe and glass belonging to the 20Li2O-10Al2O3-7BaO-2La2O3-2ZnO-59P2O5 system. Exciton peaks in the Vis domain, related to electron–hole pairs transitions from the valence band to the conduction band, were revealed in the optical absorption spectra of the CdSe-doped film. CdSe quantum dots (QDs) band gap energy depends on the CdSe quantum confinement effect. CdSe-doped film photoluminescence exhibits peaks in the red domain assigned to CdSe transitions from the excited state to the ground state. The size of CdSe nanoclusters, determined from x-ray diffraction is correlated with scanning electron microscopy–energy dispersive x-ray spectroscopy and atomic force microscopy results. Vibration modes specific both to CdSe QDs and to the vitreous network have been evidenced by Fourier transform infrared and Raman spectroscopy. [ABSTRACT FROM AUTHOR]

Thin films of amorphous and polycrystalline indium zinc oxide (IZO) having various In/(In + Zn) nominal compositions from 0.3 to 0.9 were grown by the pulsed laser deposition technique at room temperature or at 400 °C on oxidized Si and quartz substrates. After deposition, the films were gamma irradiated at doses of 10, 20 and 30 kGy under Ar atmosphere. Grazing incidence X-ray diffraction investigations could not find measurable changes of the structure after irradiation. Simulations of the X-ray reflectivity (XRR) and diffuse scattering curves acquired from the films showed a small density decrease after irradiation, accompanied by an increase of the thickness and surface roughness. Spectroscopic ellipsometry investigations confirmed the increase of the IZO films' thickness after irradiation, being in agreement with the XRR results. Small changes in the refractive index, most probably caused by changes in the film density were also observed. Four point probe measurements showed very small resistivity increases after irradiation, with the films containing higher In concentration presenting negligible changes. [ABSTRACT FROM AUTHOR]

LaB6 thin films were deposited at a temperature of 500 °C under vacuum or Ar atmosphere by the pulsed laser deposition technique on (100) Si substrates using a KrF laser. Grazing incidence x-ray diffraction investigations found that films were nanocrystalline, with grain size dimensions from 86 to 102 nm and exhibited microstrain values around 1.1%. Simulations of the x-ray reflectivity curves acquired from the deposited films showed that films had a density around 4.55 g/cm³, and were very smooth, with a surface roughness root-mean-square of 1.5 nm, which was also confirmed by scanning electron and atomic force microscopy measurements. All films were covered by a ~2 nm thick contamination layer that formed when samples were exposed to the ambient. Auger electron spectroscopy investigations found very low oxygen impurity levels below 1.5 at.% once the contamination surface layer was removed by Ar ion sputtering. Four point probe measurements showed that films were conductive, with a resistivity value around 200 μΩcm for those deposited under Ar atmosphere and slightly higher for those deposited under vacuum. Nanoindentation and scratch investigations showed that films were rather hard, H~16 GPa, E~165 GPa, and adherent to the substrate. Thermionic emission measurements indicated a work function value of 2.66 eV, very similar to other reported values for LaB6. [ABSTRACT FROM AUTHOR]

Highlights: [•] MAPLE deposition of microspheres to prepare antibiofilm surfaces. [•] Novel thin coatings with anti-adherent properties. [•] Novel thin coatings based PLA–PVA microspheres. [•] Novel microspheres based PLA–PVA and natural compounds (usnic acid). [Copyright &y& Elsevier]

Abstract: Thin films of indium zinc oxide were grown from targets with In atomic concentration [In/(In+Zn)] of 2.8%, 4.3%, and 16.8%, respectively, by pulsed laser deposition technique (KrF laser, 10Hz, 4J/cm2 fluence) on Si(001) and glass substrates that were heated at 500°C. X-ray diffraction investigations showed that targets that had an atomic In concentration of 2.8% exhibited only the wurtzite-type ZnO lattice, while the targets that contained In concentrations of 4.3% and 16.8% consisted of a mixture of the wurtzite-type ZnO and the homologous compound Zn7In2O10. All deposited films exhibited only the wurtzite-type ZnO lattice, being c-axis textured. The increase of the In concentration resulted in films less textured that also exhibited increased lattice parameters a and c. X-ray photoelectron spectroscopy investigations showed slight changes of the In 3d and Zn 2p binding energies for increased In content, consistent with an In doped ZnO lattice. [Copyright &y& Elsevier]

Abstract: Mixtures of transparent and conductive oxides such as ITO-ZnO have been grown by a combinatorial pulsed laser deposition technique from two targets that were located 15mm apart. The films were deposited on (100)Si and quartz substrates that were heated at temperatures from 300 to 500°C. Measurements of the In to Zn ratios along the transversal axis of the substrates, which passes through the maximum thickness points corresponding to each target position were performed using energy dispersive X-ray spectroscopy and spectroscopic ellipsometry. From simulations of the X-ray reflectivity spectra, collected with a 2mm mask on different locations along the transversal axis of the samples, the density and thickness of the deposited films were calculated and then the In to Zn ratios. The crystalline structure and electrical properties of the deposited films were also investigated along the same axis. Changes in the ratio of In/Zn along this axis resulted in changes of the film lattice constant and texture. [Copyright &y& Elsevier]

We investigated the optical and electrical properties of flexible single and bi-layer organic heterostructures prepared by vacuum evaporation with a p-type layer of arylenevinylene oligomers, based on carbazole, 3,3′ bis(N hexylcarbazole)vinylbenzene = L13, or triphenylamine, 1,4 bis [4 (N,N' diphenylamino)phenylvinyl] benzene = L78, and an n-type layer of 5,10,15,20-tetra(4-pyrydil)21H,23H-porphyne = TPyP. Transparent conductor films of Al-doped ZnO (AZO) with high transparency, >90% for wavelengths > 400 nm, and low resistivity, between 6.9 × 10−4 Ω·cm and 23 × 10−4 Ω·cm, were deposited by pulsed laser deposition on flexible substrates of polyethylene terephthalate (PET). The properties of the heterostructures based on oligomers and zinc phthalocyanine (ZnPc) were compared, emphasizing the effect of the surface morphology. The measurements revealed a good absorption in the visible range of the PET/AZO/arylenevinylene oligomer/TPyP heterostructures and a typical injection contact behavior with linear (ZnPc, L78) or non-linear (L13) J-V characteristics in the dark, at voltages < 0.4 V. The heterostructure PET/AZO/L78/TPyP/Al showed a current density of ~1 mA/cm2 at a voltage of 0.3 V. The correlation between the roughness exponent, evaluated from the height-height correlation function, grain shape, and electrical behavior was analyzed. Consequently, the oligomer based on triphenylamine could be a promising replacement of donor ZnPc in flexible electronic applications. [ABSTRACT FROM AUTHOR]

Papain thin films were synthesised by matrix assisted and conventional pulsed laser deposition (PLD) techniques. The targets submitted to laser radiation consisted on a frozen composite obtained by dissolving the biomaterials in distilled water. For the deposition of the thin films by conventional PLD pressed biomaterial powder targets were submitted to laser irradiation. An UV KrF* excimer laser source was used in the experiments at 0.5 J/cm2 incident fluence value, diminished one order of magnitude as compared to irradiation of inorganic materials. The surface morphology of the obtained thin films was studied by atomic force profilometry and atomic force microscopy. The investigations showed that the growth mode and surface quality of the deposited biomaterial thin films is strongly influenced by the target preparation procedure. [ABSTRACT FROM AUTHOR]

Human society's demand for energy has increased faster in the last few decades due to the world's population growth and economy development. Solar power can be a part of a sustainable solution to this world's energy need, taking into account that the cost of the renewable energy recently dropped owed to the remarkable progress achieved in the solar panels field. Thus, this inexhaustible source of energy can produce cheap and clean energy with a beneficial impact on the climate change. The considerable potential of the organic photovoltaic (OPV) cells was recently emphasized, with efficiencies exceeding 18% being achieved for OPV devices with various architectures. The challenges regarding the improvement in the OPV performance consist of the selection of the adequate raw organic compounds and manufacturing techniques, both strongly influencing the electrical parameters of the fabricated OPV devices. At the laboratory level, the solution-based techniques are used in the preparation of the active films based on polymers, while the vacuum evaporation is usually involved in the deposition of small molecule organic compounds. The major breakthrough in the OPV field was the implementation of the bulk heterojunction concept but the deposition of mixed films from the same solvent is not always possible. Therefore, this review provides a survey on the development attained in the deposition of organic layers based on small molecules compounds, oligomers and polymers using matrix-assisted pulsed laser evaporation (MAPLE)-based deposition techniques (MAPLE, RIR-MAPLE and emulsion-based RIR-MAPLE). An overview of the influence of various experimental parameters involved in these laser deposition methods on the properties of the fabricated layers is given in order to identify, in the forthcoming years, new strategies for enhancing the OPV cells performance. [ABSTRACT FROM AUTHOR]

We report on the fabrication of dye-sensitized solar cells with a TiO2 buffer layer between the transparent conductive oxide substrate and the mesoporous TiO2 film, in order to improve the photovoltaic conversion efficiency of the device. The buffer layer was fabricated by pulsed laser deposition whereas the mesoporous film by the doctor blade method, using TiO2 paste obtained by the sol–gel technique. The buffer layer was deposited in either oxygen (10 Pa and 50 Pa) or argon (10 Pa and 50 Pa) onto transparent conducting oxide glass kept at room temperature. The cross-section scanning electron microscopy image showed differences in layer morphology and thickness, depending on the deposition conditions. Transmission electron microscopy studies of the TiO2 buffer layers indicated that films consisted of grains with typical diameters of 10 nm to 30 nm. We found that the photovoltaic conversion efficiencies, determined under standard air mass 1.5 global (AM 1.5G) conditions, of the solar cells with a buffer layer are more than two times larger than those of the standard cells. The best performance was reached for buffer layers deposited at 10 Pa O2. We discuss the processes that take place in the device and emphasize the role of the brush-like buffer layer in the performance increase. [ABSTRACT FROM AUTHOR]

Indium tin oxide (ITO) thin films were grown on nanopatterned glass substrates by the pulsed laser deposition (PLD) technique. The deposition was carried out at 1.2 J/cm2 laser fluence, low oxygen pressure (1.5 Pa) and on unheated substrate. Arrays of periodic pillars with widths of ~350 nm, heights of ~250 nm, and separation pitches of ~1100 nm were fabricated on glass substrates using UV nanoimprint lithography (UV-NIL), a simple, cost-effective, and high throughput technique used to fabricate nanopatterns on large areas. In order to emphasize the influence of the periodic patterns on the properties of the nanostructured ITO films, this transparent conductive oxide (TCO) was also grown on flat glass substrates. Therefore, the structural, compositional, morphological, optical, and electrical properties of both non-patterned and patterned ITO films were investigated in a comparative manner. The energy dispersive X-ray analysis (EDX) confirms that the ITO films preserve the In2O3:SnO2 weight ratio from the solid ITO target. The SEM and atomic force microscopy (AFM) images prove that the deposited ITO films retain the pattern of the glass substrates. The optical investigations reveal that patterned ITO films present a good optical transmittance. The electrical measurements show that both the non-patterned and patterned ITO films are characterized by a low electrical resistivity (<2.8 × 10−4). However, an improvement in the Hall mobility was achieved in the case of the nanopatterned ITO films, evidencing the potential applications of such nanopatterned TCO films obtained by PLD in photovoltaic and light emitting devices. [ABSTRACT FROM AUTHOR]

Thin films of TiN, ZrC, and ZrN were deposited at room temperature on highly polished Ti and Si samples using the pulsed laser deposition technique. Grazing incidence X-ray diffraction investigations showed that films were nanocrystalline, with grain sizes from 5 to 12 nm and under compression. Simulations of X-ray reflectivity curves acquired from the samples indicated that the deposited layers were dense and smooth. Electrochemical tests performed in simulated body fluid showed that the deposited coatings significantly improved the corrosion resistance of Ti samples. The comparative study found out that the best sample was ZrN/Ti, its corrosion current after 32 days immersion in simulated body fluids being half of that measured for the bare Ti sample and in the same time almost unchanged from the initial value. [ABSTRACT FROM AUTHOR]

We report on the selection by combinatorial pulsed laser deposition of Silver-doped Carbon structures with reliable physical-chemical characteristics and high efficiency against microbial biofilms. The investigation of the films was performed by scanning electron microscopy, high resolution atomic force microscopy, energy dispersive X-Ray Spectroscopy, X-ray diffraction, Raman spectroscopy, bonding strength “pull-out” tests, and surface energy measurements. In vitro biological assays were carried out using a large spectrum of bacterial and fungal strains, i.e. , Staphylococcus aureus , Staphylococcus epidermidis , Pseudomonas aeruginosa , Enterococcus faecalis and Candida albicans. The biocompatibility of the films obtained was evaluated on MG63 mammalian cell cultures. The optimal combination with reasonable physical-chemical properties, efficient protection against microbial colonization and beneficial effects on human cells was found for Silver-doped Carbon films containing 2 to 7 at.% silver. These mixtures can be used to fabricate safe and efficient coatings of metallic implants, with the goal to decrease the risk of implant associated biofilm infections which are difficult to treat and often responsible for implant failure. [ABSTRACT FROM AUTHOR]

Within this study a matrix assisted pulsed laser evaporation technique was employed for deposition of CdS quantum dots onto TiO 2 nanotubes. The number of laser pulses and laser fluence were varied to control the amount of CdS deposit. TiO 2 nanotubes were obtained via anodization technique of sputtered Ti film on FTO glass. For CdS synthesis, dimethyl sulfoxide (DMSO) was used as a matrix of the target which absorbs radiation of KrF* laser ( λ =248 nm), then evaporates enabling the deposition of CdS quantum dots dispersed into DMSO. This study showed that the size of the CdS nanoparticles synthetized in DMSO can be controlled with microwave treatment that causes the release of S 2− ions from DMSO for creation of CdS nuclei and/or their further growth. The optimization of CdS synthesis is achieved by varying the duration of the microwave treatment and the microwave power. The obtained TiO 2 photoanodes with different amounts of CdS were assembled with PbS cathodes and the polysulfide electrolyte was injected between. The influence of amount of CdS deposit and the microwave treatment of CdS on photovoltaic performance of the fabricated solar cells were analyzed under AM1.5. The results showed that microwave treatment produced a Cd(S)–DMSO complex onto CdS nanoparticles which led to a higher current density of the solar cells obtained using microwave treated CdS target. Also, the increase of CdS content by increasing the number of laser pulses provided the enhance of I–V characteristics of the solar cells. [ABSTRACT FROM AUTHOR]

Anodization was used to obtain a nanotubular TiO 2 photoanode on F–SnO 2 glass. Subsequent annealing in the CH 4 atmosphere promoted the C-doping and improved the crystallinity of the TiO 2 nanotubes. The pulsed laser deposition was applied to cover the nanotubes with Bi 2 O 3 , serving as a hole transport material. X-ray photoelectron spectroscopy analyses of the doped samples reveal a shift in the valence band's maximum position towards lower binding energy as compared to those observed for the undoped samples (annealed in the air). The doping positively affects the absorption by shifting the absorption edge to 567 nm. I – V measurements under illumination show that the C-doping of TiO 2 increases the current density following the absorbance results. The highest open circuit voltage was reached for the samples with the 300 °C-deposited Bi 2 O 3 layer, pointing to better quality of the p-n junction, hence of the contact between Bi 2 O 3 and TiO 2. This in situ annealing provided the formation of close contact between Bi 2 O 3 and TiO 2 , which enabled a faster charge transport as compared to the contact obtained with no annealing or even with post annealing. [Display omitted] • C-doping of anodized TiO 2 NTs supported on FTO by annealing in CH 4. • PLD to cover TiO 2 NTs with Bi 2 O 3 film, serving as a hole transport material. • XPS: Shift of VBM to lower BE for the doped vs. the undoped NTs (annealed in air). • DRS: Absorption red shift from 430 nm (undoped NTs) to 567 nm (doped NTs). • Best PV performances: C-doped TiO 2 with Bi 2 O 3 deposited at 300 °C in situ. [ABSTRACT FROM AUTHOR]

Abstract: We report the synthesis of well crystallized stoichiometric Er:YAG thin films by pulsed laser deposition from Er:YAG targets in low pressure oxygen, followed by a post-deposition treatment at 1400°C in environmental air for 19h. The structure and morphology of the films were examined by transmission electron microscopy and selected area electron diffraction. We demonstrated that the subsequent application of pulsed laser deposition and heat treatment resulted in the formation of well crystallized single phase cubic Er:YAG nanostructured coatings. [Copyright &y& Elsevier]