1. Design of an RF Transmit/Receive Switch Using LDMOSFETs With High Power Capability and Low Insertion Loss.
- Author
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Hu, Chih-Min, Hung, Chung-Yu, Chu, Chun-Hsueh, Chang, Da-Chiang, Huang, Chih-Fang, Gong, Jeng, and Chen, Ching-Yu
- Subjects
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RADIO frequency , *SWITCHING circuits , *METAL oxide semiconductor field-effect transistors , *LOGIC circuits , *SUBSTRATES (Materials science) , *TRANSISTORS , *INTEGRATED circuits , *SYSTEMS on a chip - Abstract
This paper presents, for the first time, the study of the application of a lateral diffused metal–oxide–semiconductor field-effect transistor (LDMOSFET) in a common-gate configuration to radio-frequency (RF) transmit/receive (T/R) switching circuits. A single-pole double-throw (SPDT) 900-MHz T/R switch is implemented using 0.25-\mu\m LDMOSFET foundry technology. Measured results show that our switching circuit can achieve a low insertion loss of 0.82 dB and a high power handling capability of 27 dBm. This result is promising in integrating power management integrated circuits, RF power amplifiers, and switching circuits in a single chip, based on LDMOSFET technology, to realize an RF transmit front-end system-on-chip solution. [ABSTRACT FROM AUTHOR]
- Published
- 2011
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