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In this work, we report the fabrication of an optical waveguide by single-energy H+ ion implantation in the Er3+-doped phosphate glass. The ion implantation conditions are with energy of 0.4 MeV and a fluence of 8.0×1016 ions/cm2. The dark mode spectrum of the waveguide structure was measured by the prism coupling experiment. The refractive index change along with the penetration depth was fitted by using the reflectivity calculation method (RCM). Finally, the calculated near-field light intensity distribution shows superior waveguide properties, which demonstrates its promising potentials for compact optical integrated devices.

The optical planar waveguides were fabricated by proton implantation with an energy of 400 keV and a dose of 8 × 1016 ions / cm2 or 400-keV helium-ion implantation with a fluence of 6 × 1016 ions / cm2 in the fluoride lead silicate glass. The morphologies were studied by a Zeiss microscope to estimate the thickness of the waveguides. The annealing effects on the fluoride lead silicate glass waveguides were investigated by 60 min annealing cycles at different temperatures ranging from 260°C to 310°C in air atmosphere. The dark-mode spectra and corresponding effective refractive indices before and after the thermal treatments were measured by the prism coupling system. The Stopping and Range of Ions in Matter 2013 code was used to simulate the irradiation process and calculate the energy losses. The refractive index distributions were reconstructed by the reflectivity calculation method. The near-field light intensity profiles of the proton and helium-ion implanted fluoride lead silicate glass waveguides were measured by the end-face coupling system. The comparison of optical properties between the proton-implanted waveguide and helium-ion implanted one was carried out. The experimental results show that the helium-ion implantation is more suitable for the fabrication of the fluoride lead silicate glass optical waveguides and the He + -implanted waveguide has better optical propagation performances.

Terbium scandium aluminum garnet crystal is a promising material which has excellent characteristics for magneto-optical devices. We report on the fabrication of optical planar and ridge waveguides in the terbium scandium aluminum garnet by using combination of helium ion implantation and precise diamond blade dicing. The conditions for the ion implantation are an energy of 400 keV and a fluence of 6 × 1016 ions/cm2. The rotating velocity and cutting speed of the diamond blade were set to be 20,000 rpm and 0.1 mm/s, respectively. The implantation depth and distributions of energy loss were calculated by the stopping and range of ions in matter 2013. The refractive index distribution and the dark-mode spectrum for the implanted planar waveguide were obtained by the reflectivity calculation method and the prism coupling system, respectively. The near-field intensity profiles of both the planar and ridge waveguides were measured by the end-face coupling technique. The optical guiding properties of the terbium scandium aluminum garnet waveguides suggest that they can serve as candidates for optical waveguide isolators.

In this work, we report on the preparation and characterization of the planar and ridge optical waveguides in the E r 3 + -doped germanate glass by combining hydrogen ion implantation and precise diamond blade dicing. The nuclear energy loss and the implantation depth were calculated by the SRIM 2013 software. The refractive index profile was obtained by the reflectivity calculation method. The dark-mode spectrum and the near-field intensity distribution were measured by the prism coupling system and end-face coupling technique, respectively. This work has important reference significance for the development of E r 3 + -doped germanate glass active devices in the optical communication field.

Planar waveguides in magneto-optical glasses (tb3+-doped aluminum borosilicate glasses) have been produced by a 550-kev proton implantation at a dose of 4.0 x 10(16) ions/cm(2) for the first time to our knowledge. after annealing at 260 degrees c for 1.0 h, the dark-mode spectra and near-field intensity distributions are measured by the prism-coupling and end-face coupling methods. the damage profile, refractive index distribution and light propagation mode of the planar waveguide are numerically calculated by srim 2010, rcm and fd-bpm, respectively. the effects of implantation on the structural and optical properties are investigated by raman and absorption spectra. it suggests that the proton-implanted tb3+-doped aluminum borosilicate glass waveguide is a good candidate for a waveguide isolator in optical fiber communication and all-optical communication. (c) 2016 elsevier ltd. all rights reserved.

Gain guided and index alternate-guided (GGIA-G) fiber is suggested by our group recently. In order to grasp more laser performance of the GGIA-G fiber, the threshold characteristics of the fiber laser is analyzed in this work. Firstly, the improved rate equations of the forward pumped GGIA-G fiber laser are established and solved. Secondly, the threshold pump power of the GG-IG fiber, GG-IAG fiber and GGIA-G fiber are compared, and the effects of parameters including Nd3+ concentration N, fiber length L, fiber core radius a, refractive index difference Δn and output mirror reflectivity R2 on the threshold pump power Pth are discussed in detail, separately. Finally, the method of designing the fiber parameters for single mode laser operation is given out. When R1s=1.0, R2s =0.8, a=50 μm, N=1.0×1020 cm−3, L2: L=0.2 and Δn=-0.005, the allowed fiber length range for single mode laser operation is about 4.1 cm∼9.0 cm. The related research results will be helpful to the better application of the GGIA-G fiber.

Sm[Formula: see text]-doped bismuthate glass has been synthesized by means of the classic melt-quenching technique. Its optical properties were characterized, which included refractive index, absorption and fluorescence spectra. The measured data suggest that the Sm[Formula: see text]-doped bismuthate glass is suitable for optoelectronic applications. A Sm[Formula: see text]-doped bismuthate glass waveguide operating at 1.539 [Formula: see text]m has been manufactured by using the proton implantation with a 0.4 MeV energy and a 8.0 × 10[Formula: see text] ions⋅cm[Formula: see text] fluence for the first time to our knowledge. The effective refractive indices of the propagation modes for the glass waveguide were obtained by the m-line technique. The energy loss caused by the collision of the irradiated protons and the nuclei of the target Sm[Formula: see text]-doped bismuthate glass was calculated by the SRIM 2013. The refractive index profile and the near-field guided mode distribution for the waveguide structure were fitted through the reflectivity calculation method (RCM) and the FD-BPM method, respectively. The proton-implanted Sm[Formula: see text]-doped bismuthate glass waveguide is an alternative for an integrated device in the telecommunication band.

In this work, the high-gain Nd3+-doped laser glass was chosen as the target material, and the optical waveguide was formed on the glass by the H+ ion implantation under the conditions of a 8.0 × 1016-ions cm−2 fluence and a 0.4 MeV energy. The post-annealing at 200 °C for 1 h was applied to improve the optical quality of the waveguide. A metallographic microscope was used to detect changes in morphology caused by implanted ions in the high-gain Nd3+-doped laser glass. The characteristics of the ion-implanted high-gain Nd3+-doped laser glass optical waveguide, such as the dark-mode profiles and the near-field intensity distributions, were measured by experimental instruments including a prism coupler and an end-coupling system. The effects of nuclear energy loss of implanted ions on the refractive index variation of the substrate were analyzed by the reflectivity calculation method. The interaction mechanism of implanted protons with the high-gain Nd3+-doped laser glass was discussed by the SRIM 2013 code. It lays a theoretical and experimental basis for the development of high-gain Nd3+-doped glass waveguide lasers and amplifiers.