1. High-Performance GaN Vertical Schottky Barrier Diode With Self-Alignment Trench Structure.
- Author
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Liu, Jiang, Han, Chuanyu, Yang, Mingchao, Liu, Weihua, Geng, Li, and Hao, Yue
- Subjects
GALLIUM nitride ,ELECTRIC field effects ,ION implantation ,SCHOTTKY barrier diodes ,TRENCHES ,BREAKDOWN voltage - Abstract
In this work, high-performance GaN vertical Schottky barrier diodes (SBDs) are successfully fabricated on the GaN-on-GaN substrate by using the self-alignment trench structure and argon (Ar) ion implantation. The fabricated diodes achieve a high current ON/ OFF ratio of 108 and high breakdown voltage (BV) of 656 V due to the reduced surface electric field effect. Besides, the temperature-dependent reverse leakage characteristics show that two Poole–Frenkel emission (PFE) processes dominate the carrier transport. This work shows great potential of the self-alignment trench structure in fabricating GaN vertical SBDs to improve the BV with simply fabrication process. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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