Search

Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350 °C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices have been fabricated, reporting a carrier mobility of 460 cm2/V s and 121 cm2/V s for electrons and holes, respectively. The devices were peeled off and transferred onto a polyethylene naphthalate foil to achieve flexible devices. CMOS inverters were also fabricated and show full output swing. [ABSTRACT FROM AUTHOR]

Abstract: Two-dimensional location control of large Si grains by, so-called, μ-Czochralski process with excimer-laser crystallization enables formation of thin-film transistors inside a grain; single-grain Si TFTs. In this study, the effect was studied of remaining defects inside the location-controlled grains on the electrical performance of single-grain Si TFTs. From electron backscattering diffraction analysis, it was found that most of the defects inside the location-controlled grains are coincidence site lattice (CSL) boundary of Σ3, followed by Σ9 and Σ27. If such CSL boundary is parallel to the current flow direction, the field effect mobility of the TFT is 597 cm2/Vs. When the Σ9 boundary is perpendicular to the current flow, the mobility decreases to 360 cm2/Vs, suggesting electrical activity in the Σ9 boundary. [Copyright &y& Elsevier]

The microstructure of pulsed-laser-deposited SrRuO[sub 3] films on Si(001) with SrO buffer layers has been studied by means of high-resolution electron microscopy and energy-dispersive X-ray spectroscopy. It was found that good epitaxial growths of the SrO buffer layers and the subsequent SrRuO[sub 3] films were achieved on the Si(001) substrates. Multiple domains were formed in the SrRuO[sub 3] films with domain boundaries nearly perpendicular to the interface between the SrRuO[sub 3] films and the SrO buffer layers. A high density of planar defects, such as twins, stacking faults and antiphase boundaries, were formed along the (022) lattice plane of the SrRuO[sub 3] films. Lattice strains in the constituting layers were investigated by means of fast Fourier transformation of local regions in the highresolution images. It was found that, close to the interface between the SrRuO[sub 3] films and the SrO buffer layers, both the layers were elastically strained in the opposite sense. The structure of coherent twin boundary in the SrRuO[sub 3] films was determined using a computer-aided high-resolution image simulation method. The comparison between the simulated and the experimental images indicated that the Sr-O plane constituted the twin boundary. [ABSTRACT FROM AUTHOR]

We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54 mV/pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10 mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM. [ABSTRACT FROM AUTHOR]

We report upon the measurement and simulation of the switch-on transient of polycrystalline silicon (poly-Si) thin-film transistors. The measurement of the switch-on transient reveals an unexpectedly long transient that cannot be explained by the theory adopted for single-crystal silicon-on-insulator (SOI) devices. Contrary to the SOI case, the transient is seen to increase with source-drain voltage. In order to explain the experimental findings, we have performed simulations of the transient and found that the results are heavily dependent upon the density of states in the band gap and their capture cross sections. Only when energy-dependent cross sections are adopted do the calculations correctly reproduce the steady-state and overshoot currents, and also the transient duration. A physical interpretation of this phenomenon is presented. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]