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1. Parameter Extraction Procedure for Vertical SiC Power JFET.

2. Model for Power SiC Vertical JFET With Unified Description of Linear and Saturation Operating Regimes.

3. A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility.

4. Proton Radiation Effects in 4H-SiC Diodes and MOS Capacitors.

5. The Effects of High-Dose Gamma Irradiation on High-Voltage 4H-SiC Schottky Diodes and the SiC-SiO[sub2] Interface.

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