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The Effects of High-Dose Gamma Irradiation on High-Voltage 4H-SiC Schottky Diodes and the SiC-SiO[sub2] Interface.
- Source :
-
IEEE Transactions on Nuclear Science . Dec2001 Part 1 of 3, Vol. 48 Issue 6, p2229. 4p. 1 Diagram, 10 Graphs. - Publication Year :
- 2001
-
Abstract
- Presents information on the characterization of high-voltage 4H-Silicon carbide (SiC) Schottky diodes under high gamma irradiation. Critical electric field strength of SiC; Schematic cross section of the irradiated diodes; Typical forward characteristics of the difference Schottky diodes before and after each radiation dose.
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 48
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 6421236
- Full Text :
- https://doi.org/10.1109/23.983200