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This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a square lattice and circle atoms is considered. [ABSTRACT FROM AUTHOR]

We report the engineering of air voids embedded in GaAs-based photonic crystal surface-emitting lasers realized by metalorganic vapor-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index planes is exploited in order to increase the void volume, leading to an order of magnitude reduction in threshold current and an increase in output power through an increase in the associated grating coupling strength. [ABSTRACT FROM AUTHOR]

REFERENCE 1 Z. Bian, K. J. Rae, B. C. King, D. Kim, G. Li, S. Thoms, D. T. D. Childs, N. D. Gerrard, N. Babazadeh, P. Reynolds, J. Grant, A. F. McKenzie, J. R. Orchard, R. J. E. Taylor, and R. A. Hogg, "Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes", AIP Adv. 11, 065315 (2021).10.1063/5.0053535 There was an error in Eq. (3) of the original paper.[1] The correct form of this equation is HT ht (3) This error does not affect the results that were obtained in our research. Erratum: "Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes" [AIP Adv. 11, 065315 (2021)]. [Extracted from the article]