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The present research explores the fabrication of a metal insulator semiconductor Schottky barrier diode (SBD) with rare earth metal oxide (Yb2O3) thin films as insulators that are effectively developed on a large scale using the low-cost jet nebulizer spray pyrolysis technique (JNSP). The Yb2O3 thin films are deposited at various substrate temperatures (350 °C–550 °C) to ascertain its influence on the characteristic properties of the material. The structural, morphological and opto-electrical properties are investigated using various characterization techniques. Here, X-ray diffraction (XRD) analysis revealed the single crystalline cubic crystal structure of Yb2O3 thin films. Field emission scanning electron microscope (FESEM) images show the presence of uniformly distributed cage and globular like structures spread over the entire surface of the Yb2O3 films. The elemental composition study demonstrates the presence of Yb and O. The optical direct energy band gap of Yb2O3 thin films have been analyzed through UV-Visible spectra. Current – voltage measurements were analyzed in dark and light conditions for the Al/Yb2O3/p-Si structured Schottky barrier diodes (SBDs) which are fabricated with interfacial layers at different substrate temperatures. Further, the functionality of the SBDs was tested at different temperatures ranging from 30 °C to 150 °C. The experimental results of all SBDs indicate a linear reduction in the ideality factor (n) up to 2.537 and 2.059 with a slight increase in the effective barrier height (ФB) of 0.789 eV& 0.638 in dark and light conditions, respectively. The SBD fabricated at 550 °C recorded good performance, which will be suitable for thermal dependent electronic device applications. [ABSTRACT FROM AUTHOR]

In this work, we have successfully prepared the nano-coral to be intact with the mesoporous of Sn-HfO2 thin films through the (jet nebulizer spray pyrolysis) JNSP technique from different Sn (5, 10, 15 Wt.%) to improve the MIS Schottky diode Al/Sn-HfO2/n-Si. To achieve the phase transformations (monoclinic to orthorhombic) in pure hafnium oxide thin films, we have added the Sn ions as the composite at optimized temperature 600 °C. The XRD characteristic used to determine the structural parameters such as the phase, grain size for pure HfO2, and composite Sn-HfO2 films. The mesoporous with irregularly shaped balls and nano coral-like morphology have been observed through FESEM images. The absorption coefficients and bandgap energy have been determined from the UV Vis spectrum. The EDAX elementary analysis has confirmed the presence of Sn, Hf, O elements in each film. The XPS spectrum has confirmed Sn's presence and binding peak with a spin-orbit on the films' surface. I-V curves of forward and reverse bias determine the barrier height, ideality factor, and saturation currents from the thermionic emission theory. All the Al/Sn@HfO2/n-Si diode parameters are strongly improved after the incorporation of Sn ions. [ABSTRACT FROM AUTHOR]

In this work, pure and Mn-doped nickel ferrite (Ni1-xMnxFe2O4, x = 0, 3, 6, 9, and 12 wt%) thin films were prepared using facile nebulizer spray pyrolysis technique. The effect of Mn concentration on the structural, optical, and magnetic properties was studied. The XRD pattern confirms the cubic spinel structure of Ni1-xMnxFe2O4 thin films and reveals the preferred orientation along the (311) direction for each film. Moreover, the average crystallite size (D) is found to increase from 13 to 30 nm with increasing Mn concentration. The FESEM micrographs exhibit randomly arranged plate-like and rice-like grains. The elements such as Mn, Ni, Fe, and O are confirmed by the EDX analysis. The optical band gap energy (Eg) varies between 2.90 and 3.60 eV. The Ni1-xMnxFe2O4 film prepared with 3 wt% of Mn exhibits superior ferrimagnetic behavior with the highest value of ηB (57.31) due to the high crystallinity, packing density, and smooth surface of the film. The present work shows that the facile nebulizer spray pyrolysis technique can produce high-quality Ni1-xMnxFe2O4 thin films with good magnetic properties. [ABSTRACT FROM AUTHOR]

In this work, we report a p-Si/n-CeO2 junction diode fabricated by a cost-effective and large-area deposition technique of jet nebulizer spray pyrolysis. The n-CeO2 layer was coated on four different substrate temperatures (Tsub) 350, 400, 450, 500 °C and their properties were studied by various techniques like XRD, FE-SEM with EDX, UV–Vis and I–V characterization. XRD pattern confirmed a cubic fluorite crystalline phase of CeO2 thin films with preferential growth along (2 0 0) direction. A smooth surface with inter-connected smaller grains was recorded by FE-SEM micrographs and also the existing elements Ce and O have been confirmed. For Tsub of 450 °C, an exceptional optical absorption with smaller band energy of 3.3 eV was recorded in the UV–Vis spectrum. The electrical conductivity results indicated that all the films are semiconducting in nature. I–V characteristics of all the fabricated diode showed better rectification in dark with excellent photovoltaic characteristics under light exposed condition. The photosensitvity of the diode varied from 21.94 to 1093.75% with substrate temperature. Our results strongly suggested that rare-earth based p-Si/n-CeO2 diodes are suitable for future applications in ultraviolet photo-detector and photo-diode. [ABSTRACT FROM AUTHOR]

• Undoped and Sn doped Co 3 O 4 thin films were prepared by JNSP method. • Spherical-like grains are observed from the FE-SEM images. • The optical band gap of Co 3 O 4 film is noticed to be increased after adding Sn ions. • We have fabricated an undoped and Sn doped p-Co 3 O 4 /n-Si junction diode for various concentrations. • We observed that the p-Sn@Co 3 O 4 /n-Si diodes are highly sensitive and appropriate for photodetection applications. [Display omitted] In this work, we have prepared Co 3 O 4 thin films for different doping level including 0, 2, 4, and 6 wt% by JNSP method and analyzed their structural, morphological, optical, and electrical properties by XRD, FE-SEM, EDX, UV-Vis, and current-voltage (I-V) characteristics. The XRD profiles confirm the cubic crystal structures of Sn doped Co 3 O 4 films. Spherical-like grains are observed from the FE-SEM images and were suppressed due to Sn doping. Also, the elements like Sn, Co, and O were confirmed by EDX analysis. The optical band gap of Co 3 O 4 film is noticed to be increased after adding Sn ions, which has been studied through UV-Vis spectroscopy. Most importantly, we have fabricated an undoped and Sn doped p-Co 3 O 4 /n-Si junction diode for various concentrations. The determined ideality factor of the p-Sn doped Co 3 O 4 /n-Si diodes were reduced for both under dark and light conditions. In addition, the calculated responsivity, quantum efficiency, and specific detectivity of the diodes were enhanced with forwarded voltage. The p-Sn@Co 3 O 4 /n-Si diode fabricated with 2 wt% was achieved maximum responsivity and quantum efficiency of R = 247.03 mA/W, QE = 95.7%, and D* = 2.84 × 1010 at 3 V. We observed that the p-Sn doped Co 3 O 4 /n-Si diodes are highly sensitive and appropriate for photo-detection applications. [ABSTRACT FROM AUTHOR]

[Display omitted] • A nanostructured Zn@HfO 2 thin films were through the JNSP technique. • The mesoporous with irregular balls intact nanorods-like structured morphology was observed by FESEM images. • The band gap values are receded continuously after doping. • We have fabricated Al/Zn@HfO 2 /n-Si diode for various Zn concentration. • A minimum ideality factor was obtained for 15 wt% of MIS diode. In this work, we have prepared the nanorods are intact with mesoporous of Zn@HfO 2 thin films through the JNSP technique with different concentrations of Zn (5,10,15 Wt%) to improve the MIS Schottky diode Al/Zn-HfO 2 /n-Si performance. The XRD was used to determine the structural parameters such as the phase and grain size for both pure HfO 2 and Zn@HfO 2 composite films. The mesoporous with irregular balls and nano rod-like morphology have been observed through FESEM images. The absorption coefficients and bandgap energy were calculated from the UV–vis spectrum. The EDAX analysis has confirmed that the Zn, Hf and O percentages in both films. The XPS spectrum has confirmed Zn's presence and binding natural with a spin-orbit splitting on the films' surface. By the thermionic emission theory, I-V curves of forward and reverse bias are used to determine the barrier height, ideality factor and saturation currents. All the Al/Zn@HfO 2 /n-Si diode parameters are strongly improved after the incorporation of Zn ions. [ABSTRACT FROM AUTHOR]

The presence of high dielectric material between the metal and semiconductor interface played a significant role in many electronic device applications. In this work, we have fabricated Al/n-Si Schottky barrier diode by introducing nanostructured HfO 2 films as a middle layer with different substrate temperatures via JNSP technique. XRD analysis revealed significant phase change from amorphous to monoclinic phase while increasing substrate temperature. Through FESEM images, a porous structure and irregular sphere-like grains were observed. The optical energy band gap of the HfO 2 films has found to vary from 3.41 to 3.73 eV respectively. From I–V characterization, the obtained diode ideality factor was found to be decreasing and their corresponding barrier height increased with respect to substrate temperature. Particularly, the diode fabricated at 600 °C exhibited better ideality factor value (n = 3.4). We observed that the presence of highly dielectric films strongly improved the diode parameters, especially at high substrate temperature. • A nanostructured HfO2 thin films were prepared at various substrate temperature (400-600 °C) a low-cost spray pyrolysis. • A significant phase change was observed from amorphous to monoclinic while increasing the substrate temperature. • Micro-porous and ball-like grains have been recorded through FE-SEM micrographs. • The HfO2 film prepared at 600 °C shows maximum absorbance and minimum bad gap of 3.41 eV. • Al/HfO2/n-Si structured Schottky barrier diodes were fabricated with different substrate temperature. [ABSTRACT FROM AUTHOR]

[Display omitted] • A nanostructured MoS 2 thin films were prepared on glass substrate by JNSP technique. • The elongated irregular rod-like structures were revealed through FESEM. • The MoS 2 films deposited at 450 °C exhibit minimum band gap. • We have fabricated p-Si/n-MoS 2 junction diode for different substrate temperature. • A minimum ideality factor of 2.23 was obtained for 550 °C. Inorganic two-dimensional materials are gradually becoming resources for modern electronic device manufacturing. Fascinate of 2D transition metal dicholgonides (TMDs) are particularly high. TMDS are very great potential for their characteristics and band gap structure in optoelectronic devices. In TMDs, 2D MoS 2 is most researchable material due to its good performance and its adequacy of electronic and optoelectronic application. Here we demonstrate MoS 2 thin film for various temperature such as 400, 450, 500, 550 °C via Jet Nebulizer Spray Pyrolysis (JNSP) technique for PN diode application. XRD pattern revealed that the polycrystalline nature of MoS 2 films with hexagonal crystal structure. The elongated irregular rod-like structures were revealed through FESEM. Elemental confirmation studies of Mo and S were done through EDX. The MoS 2 films deposited at 550 °C exhibit minimum band gap. The average conductivity values were found to be increased from 1.730 × 10−8 to 3.877 × 10−7 S/cm with substrate temperature. A positive photo conducting-nature of p-Si/n-MoS 2 diode have been fabricated. Remarkably, the p-Si/n-MoS 2 diode fabricated at 550 °C revealed minimum n values of 2.23. [ABSTRACT FROM AUTHOR]