9 results on '"Ebrahimi, Behzad"'
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2. An accurate analytical I–V model for sub-90-nm MOSFETs and its application to read static noise margin modeling
3. Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs.
4. A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages.
5. Robust FinFET SRAM design based on dynamic back-gate voltage adjustment.
6. Analysis of SRAM cell characteristics based on high-k metal-gate strained Si/Si1−xGex MOSFET with consideration of NBTI/PBTI.
7. Low-power and robust SRAM cells based on asymmetric FinFET structures.
8. Statistical Design Optimization of FinFET SRAM Using Back-Gate Voltage.
9. A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies.
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