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Single event upset (SEU) is a critical issue for the static random access memory (SRAM) exposed to irradiated environments. In this paper, an area-efficient 6 T SRAM cell design based on partially depleted silicon-on-insulator (PDSOI) technology is proposed to improve the ability to resist SEU using tunnel-diode body-contact (TDBC) transistors. The proposed cell and 6 T floating body (FB) SOI SRAM cell are fabricated using 130 nm PDSOI technology for comparison purposes. Pulsed laser experiments show that, at the nominal supply voltage of 1.2 V, the energy threshold of the proposed cell increases by 25.2 % compared to the 6 T FB SOI cell with a similar area. The energy threshold of the traditional T-gate body-contact (TB) cell is also compared with that of the proposed cell. • An area-efficient 6 T SRAM cell design based on PDSOI technology is proposed to improve the ability of resisting SEU. • The proposed cell and 6 T floating body SOI SRAM cell are fabricated using 130 nm PDSOI technology for comparison purposes. • The energy threshold of the proposed cell increases by 25.2 % compared to the 6 T FB SOI cell with a similar area. [ABSTRACT FROM AUTHOR]

The back-gate terminal biasing has been used to improve the SRAM cells' performance. In this paper, the impact of back-gate bias on the performance of 22 nm FDSOI SRAM 6T cell is analyzed. The cell is fabricated in the regular well and two back-gate terminals are connected to Pwell and Nwell, respectively. The influences of back-gate bias on the cell are studied by the variations of the metrics of leakage current, read current, static noise margin (SNM) and N -curve under the three back-gate bias combinations. Through measurements and HSPICE simulations, the mechanism of the variations of the cell metrics caused by the changes of the back-gate bias is explained by the shift of electrical characteristics of transistors inside the cell. [ABSTRACT FROM AUTHOR]

In this paper, a new Radiation Hardened By Design (RHBD) 8T SRAM cell is proposed that can tolerate single-event upset (SEU) in a radiation environment. According to the simulation results for 130 nm silicon-on-insulator (SOI) technology, the critical charge of the proposed 8T cell increases by 82.9% compared to the conventional 6T SRAM cell and by 62.5% compared to the other RHBD SRAM cell, the Soft-error-Tolerant-10T (ST-10T) cell. Pulsed laser testing was used for SEU sensitivity evaluation. Further, the energy threshold of the proposed cell increases by 122.3% and 90.8%, respectively, compared to the conventional 6T cell and the ST-10T cell. Moreover, the proposed cell has a lower leakage current, higher read current, and larger read static noise margin (RSNM) compared to the other two cells. The total ionizing dose (TID) effects on the proposed 8T SRAM cell were also studied, and the results show that the proposed cell is insensitive to TID. • In this work, we evaluated the anti-SEU capability of a new 8T SRAM cell design. • The SEU robustness of the proposed cell was evaluated by Pulsed laser techniques. • The total ionizing dose (TID) effects on the proposed 8T SRAM cell were also studied to get a comprehensive understanding. [ABSTRACT FROM AUTHOR]