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The tin-doped can supply conduction path to induce resistance switching behavior. However, the defect of tin-doped silicon oxide (Sn:SiOx) increased the extra leakage path lead to power consumption and joule heating degradation. In the study, supercritical CO2 fluids treatment was used to improve resistive switching property. The current conduction of high resistant state in post-treated Sn:SiOx film was transferred to Schottky emission from Frenkel-Poole due to the passivation effect. The molecular reaction model is proposed that the defect was passivated through dehydroxyl effect of supercritical fluid technology, verified by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. [ABSTRACT FROM AUTHOR]

In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical \CO2 fluid treatment. The dangling bonds of a tin-doped silicon oxide ( \Sn:SiOx) thin film were cross linked by the hydration–dehydration reaction through supercritical fluid technology. The current conduction mechanism of the LRS in the posttreated \Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction, owing to isolation of metal tin in the \Sn:SiOx thin film by hydration–dehydration reaction. The phenomena can be verified by our proposed reaction model, which is speculated by the X-ray photoelectron spectroscopy analyses. [ABSTRACT FROM AUTHOR]

Highlights: [•] The supercritical fluid treatment can efficiently reduce the operation current of resistance random access memory. [•] The dangling bonds of Sn:SiO x thin film were cross linking by the hydration–dehydration reaction by supercritical fluid treatment. [•] The current conduction mechanism of low resistance state in post-treated RRAM device was dominated by hopping conduction. [•] The current conduction mechanism of high resistance state in post-treated RRAM device was dominated by Schottky emission. [ABSTRACT FROM AUTHOR]