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A single-output, band selecting interposer is designed to combine three identical all-digital CMOS transmitter (Tx) chips. The open-drain CMOS Txs are flip-chip connected to the primary windings of three frequency selecting transformers realized on a single PCB interposer. The secondary windings of the three transformers are connected in series and they share a single output. Across 0.4 to 4 GHz, a peak power higher than 22.9 dBm is achieved collectively by the three sub-Txs with a drain efficiency (DE) better than 25%. The peak powers/DE of the three sub-Txs are 28.6 dBm/50%, 27.4 dBm/49%, and 24.7 dBm/34%, at 0.85, 2.1, and 3 GHz, respectively. This paper further demonstrates that the band selection can be achieved via reconfiguring the CMOS inverse Class-D switching power amplifiers. As demonstrated via continuous wave and 64-quadratic-amplitude modulation, WLAN, and LTE modulation tests, the reconfigurable Tx package exhibits high power and efficiency across all supported bands. [ABSTRACT FROM AUTHOR]

This paper demonstrates a wideband CMOS all-digital polar transmitter with flip-chip connection to three high-density-interconnection PCB interposers. The interposers are designed to extract power from a CMOS open-drain inverse Class-D power amplifier core. For a wide frequency range from 0.7 to 3.5 GHz, continuous-wave output power higher than 25.5 dBm and drain efficiency (DE) above 40% are demonstrated. The low-band package achieves a peak power of 29.2 dBm at 1.1 GHz with DE of 60%, the mid-band package outputs 28.8 dBm at 1.5 GHz with DE of 56%, and the high-band package generates 26 dBm at 3 GHz with DE of 49%. The amplitude modulation (AM) is achieved by digitally modulating the switch conductance of the inverse Class-D core, and the on-chip phase modulation is achieved by digitally weighing the in-phase and quadrature bias currents in the IQ mixer. Detailed modulation tests, involving 64 quadrature amplitude modulation (QAM) and 20-MHz WLAN and LTE signals, exhibit excellent power and efficiency at 0.6, 1.2, 1.8, 2.4, 3, and 3.6 GHz. The associated specifications on spectral masks and error vector magnitudes are satisfied. [ABSTRACT FROM AUTHOR]

This paper demonstrates a wideband CMOS all-digital polar transmitter with flip-chip connection to three high-density-interconnection PCB interposers. The interposers are designed to extract power from a CMOS open-drain inverse Class-D power amplifier core. For a wide frequency range from 0.7 to 3.5 GHz, continuous-wave output power higher than 25.5 dBm and drain efficiency (DE) above 40% are demonstrated. The low-band package achieves a peak power of 29.2 dBm at 1.1 GHz with DE of 60%, the mid-band package outputs 28.8 dBm at 1.5 GHz with DE of 56%, and the high-band package generates 26 dBm at 3 GHz with DE of 49%. The amplitude modulation (AM) is achieved by digitally modulating the switch conductance of the inverse Class-D core, and the on-chip phase modulation is achieved by digitally weighing the in-phase and quadrature bias currents in the IQ mixer. Detailed modulation tests, involving 64 quadrature amplitude modulation (QAM) and 20-MHz WLAN and LTE signals, exhibit excellent power and efficiency at 0.6, 1.2, 1.8, 2.4, 3, and 3.6 GHz. The associated specifications on spectral masks and error vector magnitudes are satisfied. [ABSTRACT FROM PUBLISHER]

Time-division duplex (TDD) systems rely on off-chip transmit/receive (T/R) switches to isolate the RX from the high-output power of the TX, while existing on-chip T/R switching solutions are narrow-band or high loss. This paper presents a wideband integrated T/R switching technique that eliminates the conventional, lossy series T/R switch from the signal path. The system reconfigures the PA as an LNA during the receive mode, and utilizes only DC mode control switches to enable TDD co-existence. To demonstrate this technique, a polar transmitter that can be re-purposed into a common-gate LNA is implemented in 65-nm CMOS. With an integrated front-end balun transformer, the transmitter achieves 20-dBm peak output power with 32.7% peak drain efficiency. In the receive mode, the PA is reconfigured into a wideband 3.4–5.4-GHz LNA achieving −6.7-dBm P1dB, and 5.1-dB noise figure. [ABSTRACT FROM AUTHOR]

This paper presents a RISC-V system-on-chip (SoC) with integrated voltage regulation, adaptive clocking, and power management implemented in a 28 nm fully depleted silicon-on-insulator process. A fully integrated simultaneous-switching switched-capacitor DC–DC converter supplies an application core using a clock from a free-running adaptive clock generator, achieving high system conversion efficiency (82%–89%) and energy efficiency (41.8 double-precision GFLOPS/W) while delivering up to 231 mW of power. A second core serves as an integrated power-management unit that can measure system state and actuate changes to core voltage and frequency, allowing the implementation of a wide variety of power-management algorithms that can respond at submicrosecond timescales while adding just 2.0% area overhead. A voltage dithering program allows operation across a wide continuous voltage range (0.45 V–1 V), while an adaptive voltage-scaling algorithm reduces the energy consumption of a synthetic benchmark by 39.8% with negligible performance penalty, demonstrating practical microsecond-scale power management for mobile SoCs. [ABSTRACT FROM AUTHOR]

This work demonstrates a RISC-V vector microprocessor implemented in 28 nm FDSOI with fully integrated simultaneous-switching switched-capacitor DC–DC (SC DC–DC) converters and adaptive clocking that generates four on-chip voltages between 0.45 and 1 V using only 1.0 V core and 1.8 V IO voltage inputs. The converters achieve high efficiency at the system level by switching simultaneously to avoid charge-sharing losses and by using an adaptive clock to maximize performance for the resulting voltage ripple. Details about the implementation of the DC–DC switches, DC–DC controller, and adaptive clock are provided, and the sources of conversion loss are analyzed based on measured results. This system pushes the capabilities of dynamic voltage scaling by enabling fast transitions (20 ns), simple packaging (no off-chip passives), low area overhead (16%), high conversion efficiency (80%–86%), and high energy efficiency (26.2 DP GFLOPS/W) for mobile devices. [ABSTRACT FROM PUBLISHER]

Integrating multiple power converters on-chip improves energy efficiency of manycore architectures. Switched-capacitor (SC) dc-dc converters are compatible with conventional CMOS processes, but traditional implementations suffer from limited conversion efficiency. We propose a dynamic voltage and frequency scaling scheme with SC converters that achieves high converter efficiency by allowing the output voltage to ripple and having the processor core frequency track the ripple. Minimum core energy is achieved by hopping between different converter modes and tuning body-bias voltages. A multicore processor model based on a 28-nm technology shows conversion efficiencies of 90% along with over 25% improvement in the overall chip energy efficiency. [ABSTRACT FROM AUTHOR]

This paper describes a mixed-signal I/Q 32-coefficient receive-side feedforward equalizer (RX-FFE) and 100-coefficient decision feedback equalizer (DFE) for a 60 GHz baseband. Integrated in 65 nm LP CMOS with variable gain amplifiers (VGA), analog phase rotator (PR), and clock generation and phase adjustment circuits, the I/Q equalizer supports 60 GHz WiGig non-line-of-sight (NLOS) channels with > 12 ns of delay spread while consuming 66 mW from a 1.2 V supply at 8 Gb/s. Energy-efficient equalization is achieved by the RX-FFE using a proposed switching matrix architecture, and by implementing the multi-coefficient FFE-DFE summing with cascoded current integration. [ABSTRACT FROM AUTHOR]

A 65-nm digitally modulated polar TX for WLAN 802.11g is fully integrated along with baseband digital filtering. The TX employs dynamic impedance modulation to improve efficiency at back-off powers. High-bandwidth phase modulation is achieved efficiently with an open-loop architecture. Operating from 1.2-V/1-V supplies, the TX delivers 16.8 dBm average power at -28-dB EVM with 24.5% drain efficiency, 22% PAE, 19.3% system efficiency, and 247-mW power consumption including the entire on-chip TX chain; the noise floor is -125 dBm/Hz at 200-MHz offset without external filtering. [ABSTRACT FROM PUBLISHER]

This paper provides a perspective on progress toward realization of efficient, fully integrated dc–dc conversion and regulation functionality in CMOS platforms. In providing a comparative assessment between the inductor-based and switched-capacitor approaches, the presentation reviews the salient features in effectiveness in utilization of switch technology and in use and implementation of passives. The analytical conclusions point toward the strong advantages of the switched-capacitor (SC) approach with respect to both switch utilization and much higher energy densities of capacitors versus inductors. The analysis is substantiated with a review of recently developed and published integrated dc–dc converters of both the inductor-based and SC types. [ABSTRACT FROM AUTHOR]

In this work, we have demonstrated a fully-integrated, high-efficiency CMOS inverse Class-D PA. Such efficient switching amplifiers can form the core of mixed-signal polar transmitters. A comprehensive analytical framework has been developed to determine optimum component values to maximize efficiency. Operating from a 1-V supply, the PA achieves a peak efficiency of 44% without any RF process options. This is comparable to that of state-of-the-art CMOS switching PAs despite using a much simpler output matching network. [ABSTRACT FROM PUBLISHER]

Many steeply switching logic devices have recently been proposed to overcome the energy efficiency limitations of CMOS technology. In this paper, circuit-level energy–performance analysis is used to derive the design requirements for these alternative switching devices. Using a simple analytical approach, this paper shows that the optimal Ion/Ioff and Edyn/Eleak ratios are set only by circuit-level parameters as well as the device transfer characteristic off-state Soff, on -state Son, and effective Seff inverse slopes. For a wide variety of switching device characteristics and circuit parameters, the optimal Edyn/Eleak ratio is approximately (K/\2)(Seff/Soff) - \0.56(Son/Soff) - \0.56, where K ranges from 6.23 to 11.9. Based upon this theoretical framework, simple requirements for Soff, Son, and Seff are established in order for an alternative switching device to be more energy efficient than a MOSFET. The results reemphasize that merely focusing on achieving the steepest local inverse slope S is insufficient, since energy dissipation is set mainly by Seff and not by S. Finally, the general shape of the energy–delay curve is also set by these inverse slopes, with its steepness directly proportional to Son/Soff. This analytical approach provides a simple method to assess the promise of any new device technology in potentially overcoming the energy efficiency limitations of CMOS technology. [ABSTRACT FROM AUTHOR]

This paper describes design techniques to maximize the efficiency and power density of fully integrated switched-capacitor (SC) DC-DC converters. Circuit design methods are proposed to enable simplified gate drivers while supporting multiple topologies (and hence output voltages). These methods are verified by a proof-of-concept converter prototype implemented in 0.374 mm^2 of a 32 nm SOI process. The 32-phase interleaved converter can be configured into three topologies to support output voltages of 0.5 V–1.2 V from a 2 V input supply, and achieves 79.76% efficiency at an output power density of 0.86 W/mm ^2. [ABSTRACT FROM PUBLISHER]

A 65-nm digitally modulated polar transmitter incorporates a fully integrated, efficient 2.4-GHz switching Inverse Class-D power amplifier. Low-power digital filtering on the amplitude path helps remove spectral images for coexistence. The transmitter integrates the complete LO distribution network and digital drivers. Operating from a 1-V supply, the PA has 21.8-dBm peak output power with 44% efficiency. Simple static predistortion helps the transmitter meet EVM and mask requirements of 802.11g 54-Mb/s WLAN data with 18% average efficiency. [ABSTRACT FROM AUTHOR]

Microelectromechanical relays have recently been proposed for ultra-low-power digital logic because their nearly ideal switching behavior can potentially enable reductions in supply voltage (Vdd) and, hence, energy per operation beyond the limits of MOSFETs. Using a calibrated analytical model, a sensitivity-based energy–delay optimization approach is developed in order to establish simple relay design guidelines. It is found that, at the optimal design point, every 2 \times energy increase can be traded off for a \sim\!\!\1.5\times reduction in relay delay. A contact-gap-to-actuation-gap thickness ratio of 0.7–0.8 is shown to result in the most energy-efficient relay operation, implying that pull-in operation is preferred for an energy-efficient relay design. Based on the analytical model and design guidelines, a scaling theory for relays is presented. A scaled relay technology is projected to provide >\10\times energy savings over an equivalent MOSFET technology, for circuits operating at clock frequencies up to \sim100 MHz. [ABSTRACT FROM AUTHOR]