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This paper discusses a novel methodology to increase the voltage droop compensation range in generalized solid-state bipolar high-voltage Marx modulators with one resonant stage. To maintain the modularity characteristic of bipolar Marx modulators, the imbedding of additional resonant stages is not straightforward. Nevertheless, this paper proposes to add a second resonant stage to the already existing resonant-type voltage droop compensation stage. This second stage increases the voltage droop compensation percentage of a generalized solid-state bipolar Marx generator. The compensation of the bipolar pulse voltage droop is now achieved by adding two auxiliary synchronous compensation resonant voltages, to the output capacitive decaying voltage. Simulation and experimental results are presented for six Marx plus two resonant stages, 16% voltage droop, with 3-kV pulse amplitude, 100- $\mu \text{s}$ pulsewidth, 40-ms relaxation time, and 10-Hz pulse repetition rate. [ABSTRACT FROM AUTHOR]

This paper presents the effect of stray capacitances in bipolar (negative and/or positive) pulses generated by the two different topologies of the solid-state Marx modulators. According to the analysis, the stray capacitances influence the energy transfer from the Marx modulator capacitors to the load affecting the bipolar (negative and/or positive) pulse rise time. This paper deals with the structure design to reduce the influence of the stray capacitance and to improve the pulse rise time of these bipolar solid-state Marx modulators. A four-stage laboratory prototype of the two topologies has been assembled using 1200-V insulated gate bipolar transistors and diodes, operating with 1000-V dc input voltage and 1-kHz frequency, producing 4-kV bipolar pulses, with 5- \mu \texts pulse duration and 120-ns rise time, into a resistive load. [ABSTRACT FROM PUBLISHER]

Two solid-state bipolar Marx modulators are analyzed and compared regarding hold-off semiconductor voltages and open-fault tolerance capability. Normal and abnormal operating conditions are considered, such as switch synchronization mismatches, failures, and open faults. Ten-stage laboratory prototypes of two bipolar Marx modulators have been assembled using 1200-V insulated gate bipolar transistors and matching diodes, to operate at 500-V dc input voltage. Outputs are 4-kV bipolar pulses, 1% duty ratio, into resistive loads, and 1-kHz frequency. Lack of synchronization and open-fault tests confirm that only topologies with redundant switches can operate without semiconductors being subjected to double hold-off voltages while presenting current paths to clear faults. [ABSTRACT FROM PUBLISHER]

This paper presents a novel technique for the voltage droop compensation of long pulses in solid-state bipolar high-voltage Marx generators. Considering the modularity of Marx generators the compensation consists in adding one extra stage to perform as a pulsewidth modulation circuit. This stage voltage is added to the output positive or negative pulses, and an output LfCf filter is included to smooth the voltage pulse waveform. A five-stage laboratory prototype of this circuit has been assembled using 1200-V Insulated Gate Bipolar Transistors and diodes with 1000-V dc input voltage. The circuit was operated at 50-Hz bipolar pulse rate, giving 4-kV bipolar pulses, into a resistive load, with 100- \mu \texts pulsewidth and 9.5-ms relaxation time. The circuit was able to compensate 10% of bipolar pulse voltage droop. [ABSTRACT FROM PUBLISHER]

This paper shows how to use modular Marx multilevel converter diode ( \textM^3 CD) modules to apply unipolar or bipolar high-voltage pulses for pulsed power applications. The \textM^3 CD cells allow the assembly of a multilevel converter without needing complex algorithms and parameter measurement to balance the capacitor voltages. This paper also explains how to supply all the modular cells in order to ensure galvanic isolation between control circuits and power circuits. The experimental results for a generator with seven levels, and unipolar and bipolar pulses into resistive, inductive, and capacitive loads are presented. [ABSTRACT FROM AUTHOR]