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By virtue of the excellent plasticity and tunable transport properties, Ag2S-based materials demonstrate an intriguing prospect for flexible or hetero-shaped thermoelectric applications. Among them, Ag2S1-xTex exhibits rich and interesting variations in crystal structure, mechanical and thermoelectric transport properties. However, Te alloying obviously introduces extremely large order-disorder distributions of cations and anions, leading to quite complicated crystal structures and thermoelectric properties. Detailed composition-structure-performance correlation of Ag2S1-xTex still remains to be established. In this work, we designed and prepared a series of Ag2S1-xTex (x = 0–0.3) materials with low Te content. We discovered that the monoclinic-to-cubic phase transition occurs around x = 0.16 at room temperature. Te alloying plays a similar role as heating in facilitating this monoclinic-to-cubic phase transition, which is analyzed based on the thermodynamic principles. Compared with the monoclinic counterparts, the cubic-structured phases are more ductile and softer in mechanical properties. In addition, the cubic phases show a degenerately semiconducting behavior with higher thermoelectric performance. A maximum zT = 0.8 at 600 K and bending strain larger than 20% at room temperature were obtained in Ag2S0.7Te0.3. This work provides a useful guidance for designing Ag2S-based alloys with enhanced plasticity and high thermoelectric performance.

Grain boundary plays a vital role in thermoelectric transports, leading to distinct properties between single crystals and polycrystals. Manipulating the grain boundary to realize good thermoelectric properties in polycrystals similar as those of single crystals is a long-standing task, but it is quite challenging. Herein, we develop a liquid-phase sintering strategy to successfully introduce Mg2Cu nano-sintering-aid into the grain boundaries of Mg3(Bi, Sb)2-based materials. The nano-aid helps to enlarge the average grain size to 23.7 μm and effectively scatter phonons, leading to excellent electrical transports similar as those of single crystals and ultralow lattice thermal conductivity as well as exceptional thermoelectric figure of merit (1.5 at 500 K) and conversion efficiency (7.4% under temperature difference of 207 K). This work provides a simple but effective strategy for the fabrication of high-performance polycrystals for large-scale applications. The authors develop a liquid-phase sintering strategy to effectively enlarge material's grain sizes, thereby achieving single crystal-like electronic transport properties in polycrystalline Mg3(Bi, Sb)2. [ABSTRACT FROM AUTHOR]

Advanced design methods and manufacturing techniques are crucial for developing thermal management structures, essential for the efficient operation of complex equipment. This study provides a thorough review of design methodologies and advanced manufacturing technologies for thermal management materials and structures. It identifies key challenges and critically evaluates the integration of innovative design principles, such as biomimicry and topology optimization, into thermal management solutions. The analysis delves into the evolution of design theories and preparation techniques, with a specific focus on modern needs and research directions, particularly highlighting components fabricated using additive manufacturing and their effectiveness in meeting advanced thermal management requirements. Current research focuses on designing structures tailored to various cooling methods, including air‐cooling, liquid‐cooling, heat exchanger cooling, and heat pipe cooling. These designs utilize phase change materials, electrocaloric cooling, and thermoelectric cooling materials to achieve optimal thermal management performance. Additionally, emerging innovations like solid‐liquid mixed heat transfer and the elastocaloric effect are garnering increased interest. Enhancing the design of thermal management structures through rigorous numerical simulations is critical for improving engineering applicability. However, overcoming challenges related to the commercialization and practical utilization of these advanced structures remains a pressing need. [ABSTRACT FROM AUTHOR]

Thermoelectric (TE) materials are an important class of energy materials that can directly convert thermal energy into electrical energy. Screening high-performance thermoelectric materials and improving their TE properties are important goals of TE materials research. Based on the objective relationship among the molar Gibbs free energy (Gm), the chemical potential, the Fermi level, the electronegativity (X) and the TE property of a material, a new method for screening TE materials with high throughput is proposed. This method requires no experiments and no first principle or Ab initio calculation. It only needs to find or calculate the molar Gibbs free energy and electronegativity of the material. Here, by calculating a variety of typical and atypical TE materials, it is found that the molar Gibbs free energy of Bi2Te3 and Sb2Te3 from 298 to 600 K (Gm = −130.20~−248.82 kJ/mol) and the electronegativity of Bi2Te3 and Sb2Te3 and PbTe (X = 1.80~2.21) can be used as criteria to judge the potential of materials to become high-performance TE materials. For good TE compounds, Gm and X are required to meet the corresponding standards at the same time. By taking Gm = −130.20~−248.82 kJ/mol and X = 1.80~2.21 as screening criteria for high performance TE materials, it is found that the Gm and X of all 15 typical TE materials and 9 widely studied TE materials meet the requirement very well, except for the X of Mg2Si, and 64 pure substances are screened as potential TE materials from 102 atypical TE materials. In addition, with reference to their electronegativity, 44 pure substances are selected directly from a thermochemical data book as potential high-performance TE materials. A particular finding is that several carbides, such as Be2C, CaC2, BaC2, SmC2, TaC and NbC, may have certain TE properties. Because the Gm and X of pure substances can be easily found in thermochemical data books and calculated using the X of pure elements, respectively, the Gm and X of materials can be used as good high-throughput screening criteria for predicting TE properties.

Monocrystalline SnSe is one of the most promising thermoelectric materials with outstanding performance and a high abundance of constituting elements. However, polycrystalline SnSe, which is more robust for applications, only shows large figure‐of‐merit (zT) values in its high‐symmetry phase. Stabilizing the high‐symmetry phase at low temperatures can thus enhance the average zT value over a broad temperature range. In this work, the high‐symmetry rock‐salt SnSe phase is successfully obtained by alloying SnSe with AgVVI2 compounds (V = Sb, Bi; VI = Se, Te). These cubic SnSe phases show a unique portfolio of properties including a high optical dielectric constant, a large maximum of optical absorption, a large Born effective charge, and abnormal bond‐breaking behavior in laser‐assisted atom probe tomography. All of these characteristics are indicative of metavalent bonding. In contrast, the Pnma phase of SnSe employs covalent bonding. The enhanced symmetry at low temperatures is realized by tailoring chemical bonding. Concomitantly, zT near room temperature is increased by a factor of more than 10 from the pristine Pnma SnSe to Fm3¯${{\bar{3}}}$m SnSe alloys. This provides insights into the enhancement of the thermoelectric performance of SnSe and other chalcogenides over a broad temperature range by manipulating the chemical bonds. [ABSTRACT FROM AUTHOR]

The main bottleneck in obtaining high‐performance thermoelectric (TE) materials is identified as how to decouple the strong interrelationship between electrical and thermal parameters. Herein, a precise interface modification approach based on the powder atomic layer deposition (ALD) technology is presented to enhance the performance of CuNi alloys. ZnO and Al2O3 layers as well as their combinations are deposited on the surface of powders, typically in 10–100 ALD cycles, and their effects on the TE performance of bulks is thoroughly investigated. The enhancement of the Seebeck coefficient, caused by the energy filtering effect, compensates for the electrical conductivity deterioration due to the low electrical conductivity of oxide layers. Furthermore, the oxide layers may significantly increase the phonon scattering. Therefore, to reduce the resistivity of coating layer, a multilayer structure is deposited on the surface of powders by inserting Al2O3 into ZnO. The accurate microstructure characterization shows that the Al atoms diffused into ZnO and realized the doping effect after pressing. Al diffusion has the potential to increase the electrical conductivity and complexity of coating layers. Compared to pure CuNi, zT increases by 128% due to the decrease in resistivity and stronger phonon scattering in phase boundaries. [ABSTRACT FROM AUTHOR]

Due to their amorphous‐like ultralow lattice thermal conductivity both below and above the superionic phase transition, crystalline Cu‐ and Ag‐based superionic argyrodites have garnered widespread attention as promising thermoelectric materials. However, despite their intriguing properties, quantifying their lattice thermal conductivities and a comprehensive understanding of the microscopic dynamics that drive these extraordinary properties are still lacking. Here, an integrated experimental and theoretical approach is adopted to reveal the presence of Cu‐dominated low‐energy optical phonons in the Cu‐based argyrodite Cu7PS6. These phonons yield strong acoustic‐optical phonon scattering through avoided crossing, enabling ultralow lattice thermal conductivity. The Unified Theory of thermal transport is employed to analyze heat conduction and successfully reproduce the experimental amorphous‐like ultralow lattice thermal conductivities, ranging from 0.43 to 0.58 W m−1 K−1, in the temperature range of 100–400 K. The study reveals that the amorphous‐like ultralow thermal conductivity of Cu7PS6 stems from a significantly dominant wave‐like conduction mechanism. Moreover, the simulations elucidate the wave‐like thermal transport mainly results from the contribution of Cu‐associated low‐energy overlapping optical phonons. This study highlights the crucial role of low‐energy and overlapping optical modes in facilitating amorphous‐like ultralow thermal transport, providing a thorough understanding of the underlying complex dynamics of argyrodites. [ABSTRACT FROM AUTHOR]

GeSb2Te4 (GST124), one of the well‐known phase‐change materials for nonvolatile memory and rewritable optical storage, has been recently found to be promising thermoelectric materials with low lattice thermal conductivity and high electrical conductivity. However, its thermoelectric performance is greatly restricted by the excessively high hole concentration. Herein, the impact of a series of group IIIA (Al, Ga, In) and group VIA (S, Se) dopants on the electrical transport properties of polycrystalline GST124 has been studied. It is found that element sulfur (S) has the best doping efficiency because the GeS bonds are very strong and ionic that are beneficial for suppressing Ge vacancies to reduce the carrier concentration. Meanwhile, element indium (In) also shows decent doping efficiency because its ionic radius is close to the Ge ion and the InTe bonds have moderate bonding strength. Moreover, In doping introduces a resonant level in the valence band, leading to enhanced Seebeck coefficient and power factor. A high figure of merit (zT)of 0.73 at 700 K and an average zT of 0.48 over 300–750 K are obtained in Ge0.92In0.08Sb2Te4, which are 26% and 66% higher than pristine GST124. This study will advance the understanding and development of high‐performance GeSbTe‐based thermoelectric materials. [ABSTRACT FROM AUTHOR]

Finding a real thermoelectric (TE) material that excels in various aspects of TE performance, mechanical properties, TE power generation, and cooling is challenging for its commercialization. Herein, we report a novel multifunctional Ge0.78Cd0.06Pb0.1Sb0.06Te material with excellent TE performance and mechanical strength, which is utilized to construct candidate TE power generation and cooling devices near room temperature. Specifically, the effectiveness of band convergence, combined with optimized carrier concentration and electronic quality factor, distinctly boosts the Seebeck coefficient, thus greatly improving the power factor. Advanced electron microscopy observation indicates that complex multi‐scale hierarchical structures and strain field distributions lead to ultra‐low lattice thermal conductivity, and also effectively enhance mechanical properties. High ZT ~ 0.6 at 303 K, average ZTave ~ 1.18 from 303 to 553 K, and Vickers hardness of ~200 Hv in Ge0.78Cd0.06Pb0.1Sb0.06Te are obtained synchronously. Particularly, a 7‐pair TE cooling device with a maximum ΔT of ~45.9 K at Th = 328 K, and a conversion efficiency of ~5.2% at Th = 553 K achieving in a single‐leg device. The present findings demonstrate a unique approach to developing superior multifunctional GeTe‐based alloys, opening up a promising avenue for commercial applications. [ABSTRACT FROM AUTHOR]

The discovery of ductile Ag2(S, Se, Te) materials opens a new avenue toward high‐performance flexible/hetero‐shaped thermoelectrics. Specifically, the cubic‐structured materials are quite attractive by combining remarkable plasticity, decent thermoelectric figure of merit (zT), and no phase transition above room temperature. However, such materials are quite few and the understanding is inadequate on their mechanical and thermoelectric properties. Enlightened by the high‐entropy principles, a series of pseudo‐ternary Ag2S‐Ag2Se‐Ag2Te alloys is designed and comprehensive diagrams of composition‐structure‐plasticity‐zT are compiled. Subsequently, the compositional region for the cubic phase is outlined. As a high‐entropy example featuring with anion‐site alloying and disordered Ag ions, Ag2‐xS1/3Se1/3Te1/3 materials exhibit impressively large elongations of 60–97%, ultralow lattice thermal conductivities of ≈0.2 W m−1 K−1, and decent zT values of 0.45 at 300 K, 0.8 at 460 K. The materials can be readily rolled into thin foils, showing excellent flexibility. Finally, a six‐leg in‐plane device is fabricated, achieving an output voltage of 13.6 mV, a maximal power of 12.8 µW, and a power density of 14.3 W m−2 under the temperature difference of 30 K, much higher than the organic counterparts. This study largely enriches the members of cubic ductile inorganic materials for the applications in flexible and hetero‐shaped energy and electronic devices. [ABSTRACT FROM AUTHOR]

Introducing nanostructures into bulk thermoelectric materials is an effective strategy for reducing lattice thermal conductivity (κlat). However, large numbers of hanging bonds emerge on account of lattice mismatch usually at the interfaces between nanostructures and matrix, thereby significantly deteriorating carrier mobility (µH) and seriously limiting thermoelectric performance. Here, utilizing the cointroduction of Gd‐Cu2Te into n‐type PbSe as a paradigm, the zT could be greatly improved. The conduction band flattening caused by Gd doping can successfully compensate for the small Seebeck coefficient in n‐type PbSe, thus achieving extraordinary electrical performance. Further advanced electron microscopy and X‐ray absorption fine structure spectra directly demonstrate that most of the Cu forms nanoscale Cu2Se precipitates, especially a unique semi‐coherent interface between the PbSe matrix and the Cu2Se nanoprecipitate is observed for the first time. Such nanoprecipitate accompanied by the semi‐coherent interface not only ensures higher µH as an excellent charge transfer mediator but also collectively scatters the heat‐carrying phonons over a wide frequency range to obtain the ultralow κlat, resulting in the prominent improvement of the ratio µH/κlat. The present finding represents an important step forward in electron–phonon decoupling via constructing semi‐coherent nanostructure and interface engineering, which should be applicable for other thermoelectric materials. [ABSTRACT FROM AUTHOR]

The polycrystalline SnS with a similar layered crystal structure and band structure to SnSe exhibits enormous commercial thermoelectric potential due to its lower cost and environmentally friendly characteristics. However, the wider bandgap of SnS leads to low carrier concentration and inferior electrical transport performance. The two-dimensional interlayer hinders carrier transport, leading to interesting and mysterious anisotropic thermoelectric properties. Herein, we reported the optimized electron–phonon transport in anisotropic polycrystalline SnS by Ag doping and Se alloying, realizing a high quality factor B by multiple strategies of optimizing carrier concentration, modifying band structure, and introducing various defects; further potential performance is predicted by the single parabolic band model. Specifically, Ag-doped SnS not only significantly increases the carrier concentration and weighted mobility μw in both directions but also induces multi-scale precipitates proven by the Debye–Callaway model to suppress phonon transport. Moreover, additional Se alloying optimizes the electronic band structure and increases the Seebeck coefficient, further improving μW and boosting the maximum power factor to ∼3.72 μW cm−1 K−2 at 873 K in the out-of-plane direction. Consequently, the synergistic optimization of carrier and phonon transport achieved a high B of 0.7 and a maximum zTmax of ∼0.8 at 873 K in Ag0.02Sn0.98S0.99Se0.01. Additionally, the high B predicted a high zTmax∼1.5 based on optimized carrier transport characteristics, demonstrating the potential great-performance polycrystalline SnS. This work provides a promising avenue for optimizing the zT of polycrystalline SnS by transport engineering. [ABSTRACT FROM AUTHOR]

The thermoelectric figure-of-merit (zT) of p-type MNiSn (M = Ti, Zr, or Hf) half-Heusler compounds is lower than their η-type counterparts due to the presence of a donor in-gap state caused by Ni occupying tetrahedral interstitials. While ZrNiSn and TiNiSn, have been extensively studied, HfNiSn remains unexplored. Herein, this study reports an improved thermoelectric property in p-type HfNi1-xCoxSn. By doping 5 at% Co at the Ni sites, the Seebeck coefficient becomes reaching a peak value exceeding 200 μV K-1 that breaks the record of previous reports. A maximum power factor of ≈2.2 mW m-1 K-2 at 973 K is achieved by optimizing the carrier concentration. The enhanced p-type transport is ascribed to the reduced content of Ni defects, supported by first principle calculations and diffraction pattern refinement. Concomitantly, Co doping also softens the lattice and scatters phonons, resulting in a minimum lattice thermal conductivity of ≈1.8 W m-1 K-1. This leads to a peak zT of 0.55 at 973 K is realized, surpassing the best performing p-type MNiSn by 100%. This approach offers a new method to manipulate the intrinsic atomic disorder in half-Heusler materials, facilitating further optimization of their electronic and thermal properties. [ABSTRACT FROM AUTHOR]

Transition metals have excellent valence electrical properties and unique electronic state distribution and are regarded as potential materials for improving thermoelectric performance. However, the impact of transition metals on thermoelectric materials is restricted to the solid solution limit and doping efficiency, reinforcing the shortcomings in systematic research. Here, thermoelectric properties of transition metal (Ti, V, Cr, Zr, Nb, Mo)-doped PbS are compared and analyzed systematically based on the formation enthalpy. The DFT calculation indicates that the doping (except Zr) leads to the bandgap expansion and the density of states distortion near the Fermi level, while the localization property of the latter results in an invalid resonance level. The formation enthalpy dominates the carrier concentration due to the opposite trend of carrier concentration and formation enthalpy. The formation enthalpy of Zr, Ti, and Nb doping is more negative than others, leading to the more significant optimization of carrier concentration. The Moss–Burstein effect promotes the bandgap expansion, leading to weaker bipolar effects for Zr, Ti, and Nb doping. Eventually, the thermoelectric performance for Ti, Zr, and Nb doping is superior to others at high temperature. The Hume-Rothery rule of the formation enthalpy supplementation is more suitable for the doping and alloying in thermoelectricity. Thermodynamic stability analysis based on the formation enthalpy contribute the PbS-based thermoelectric devices evaluation. The present finding demonstrates the significant effect of formation enthalpy on the thermoelectric properties of PbS and provides a useful avenue for the doping modification and thermodynamic stability analysis of other thermoelectric alloy materials. [ABSTRACT FROM AUTHOR]

Studies of vacancy-mediated anomalous transport properties have flourished in diverse fields since these properties endow solid materials with fascinating photoelectric, ferroelectric, and spin-electric behaviors. Although phononic and electronic transport underpin the physical origin of thermoelectrics, vacancy has only played a stereotyped role as a scattering center. Here we reveal the multifunctionality of vacancy in tailoring the transport properties of an emerging thermoelectric material, defective n-type ZrNiBi. The phonon kinetic process is mediated in both propagating velocity and relaxation time: vacancy-induced local soft bonds lower the phonon velocity while acoustic-optical phonon coupling, anisotropic vibrations, and point-defect scattering induced by vacancy shorten the relaxation time. Consequently, defective ZrNiBi exhibits the lowest lattice thermal conductivity among the half-Heusler family. In addition, a vacancy-induced flat band features prominently in its electronic band structure, which is not only desirable for electron-sufficient thermoelectric materials but also interesting for driving other novel physical phenomena. Finally, better thermoelectric performance is established in a ZrNiBi-based compound. Our findings not only demonstrate a promising thermoelectric material but also promote the fascinating vacancy-mediated anomalous transport properties for multidisciplinary explorations. Vacancy has only played a stereotyped role as a scattering center in thermoelectrics, and the boundaries of its versatility have not been tested. Here, authors reveal the multifunctionality of vacancy in tailoring the phononic and electronic transport in a defective half-Heusler ZrNiBi. [ABSTRACT FROM AUTHOR]

Thermoelectric (TE) materials are an important class of energy materials that can directly convert thermal energy into electrical energy. Screening high-performance thermoelectric materials and improving their TE properties are important goals of TE materials research. Based on the objective relationship among the molar Gibbs free energy (Gm), the chemical potential, the Fermi level, the electronegativity (X) and the TE property of a material, a new method for screening TE materials with high throughput is proposed. This method requires no experiments and no first principle or Ab initio calculation. It only needs to find or calculate the molar Gibbs free energy and electronegativity of the material. Here, by calculating a variety of typical and atypical TE materials, it is found that the molar Gibbs free energy of Bi2Te3 and Sb2Te3 from 298 to 600 K (Gm = −130.20~−248.82 kJ/mol) and the electronegativity of Bi2Te3 and Sb2Te3 and PbTe (X = 1.80~2.21) can be used as criteria to judge the potential of materials to become high-performance TE materials. For good TE compounds, Gm and X are required to meet the corresponding standards at the same time. By taking Gm = −130.20~−248.82 kJ/mol and X = 1.80~2.21 as screening criteria for high performance TE materials, it is found that the Gm and X of all 15 typical TE materials and 9 widely studied TE materials meet the requirement very well, except for the X of Mg2Si, and 64 pure substances are screened as potential TE materials from 102 atypical TE materials. In addition, with reference to their electronegativity, 44 pure substances are selected directly from a thermochemical data book as potential high-performance TE materials. A particular finding is that several carbides, such as Be2C, CaC2, BaC2, SmC2, TaC and NbC, may have certain TE properties. Because the Gm and X of pure substances can be easily found in thermochemical data books and calculated using the X of pure elements, respectively, the Gm and X of materials can be used as good high-throughput screening criteria for predicting TE properties. [ABSTRACT FROM AUTHOR]

Ge-Sb-Te compounds (GST), the well-known phase-change materials, are considered to be promising thermoelectric (TE) materials due to their decent thermoelectric performance. While Ge2Sb2Te5 and GeSb2Te4 have been extensively studied, the TE performance of GeSb4Te7 has not been well explored. Reducing the excessive carrier concentration is crucial to improving TE performance for GeSb4Te7. In this work, we synthesize a series of Se-alloyed GeSb4Te7 compounds and systematically investigate their structures and transport properties. Raman analysis reveals that Se alloying introduces a new vibrational mode of GeSe2, enhancing the interatomic interaction forces within the layers and leading to the reduction of carrier concentration. Additionally, Se alloying also increases the effective mass and thus improves the Seebeck coefficient of GeSb4Te7. The decrease in carrier concentration reduces the carrier thermal conductivity, depressing the total thermal conductivity. Finally, a maximum zT value of 0.77 and an average zT value of 0.48 (300–750 K) have been obtained in GeSb4Te5.5Se1.5. This work investigates the Raman vibration modes and the TE performance in Se-alloyed GeSb4Te7 sheddinglight on the performance optimization of other GST materials. [ABSTRACT FROM AUTHOR]

Many thermoelectric materials benefit from complex microstructures. Grain boundaries (GBs) in nanocrystalline thermoelectrics cause desirable reduction in the thermal conductivity by scattering phonons, but often lead to unwanted loss in the electrical conductivity by scattering charge carriers. Therefore, modifying GBs to suppress their electrical resistivity plays a pivotal role in the enhancement of thermoelectric performance, zT. In this work, different characteristics of GB phases in Ti‐doped NbFeSb half‐Heusler compounds are revealed using a combination of scanning transmission electron microscopy and atom probe tomography. The GB phases adopt a hexagonal close‐packed lattice, which is structurally distinct from the half‐Heusler grains. Enrichment of Fe is found at GBs in Nb0.95Ti0.05FeSb, but accumulation of Ti dopants at GBs in Nb0.80Ti0.20FeSb, correlating to the bad and good electrical conductivity of the respective GBs. Such resistive to conductive GB phase transition opens up new design space to decouple the intertwined electronic and phononic transport in thermoelectric materials. [ABSTRACT FROM AUTHOR]

AgCrSe2-based compounds have attracted much attention as an environmentally friendly thermoelectric material in recent years due to the intriguing liquid-like properties. However, the ultra-low carrier concentration and the high AgCr deep-level defects limit the overall thermoelectric performance. Here, we successfully introduced Pb into Ag-deficient Ag0.97CrSe2 alloys to tune the carrier concentration across a broad temperature range. The Pb2+ as an acceptor dopant preferentially occupies Cr sites, boosting the hole carrier concentration to 1.77 × 1019 cm−3 at room temperature. Furthermore, the Pb strongly inhibits the creation of intrinsic AgCr defects, weakens the increased thermal excited ionization with the increasing temperature and slowed the rising trend of the carrier concentration. The designed carrier concentration matches the theoretically predicted optimized one over the entire temperature range, leading to a remarkable enhancement in power factor, especially the maximum power factor of ∼ 500 μW⋅m−1⋅K−2 at 750 K is superior to most previous results. Additionally, the abundant point defects promote phonon scattering, thus reducing the lattice thermal conductivity. As a result, the maximum figure of merit zT (∼ 0.51 at 750 K) is achieved in Ag0.97Cr0.995Pb0.005Se2. This work confirms the feasibility of manipulating deep-level defects to achieve temperature-dependent optimal carrier concentration and provides a valuable guidance for other thermoelectric materials. [ABSTRACT FROM AUTHOR]

Breaking the thermoelectric figure of merit zT barrier of SnTe enables it to become a promising alternative to PbTe; however, the inferior and strongly coupled physicochemical properties of pristine SnTe severely restrict the efficient optimization. Herein, we doped trivalent Sb in SnTe and incorporated SnS particles to achieve high quality factor B through a two-step optimization strategy of tuning the valence band structure and intercalating heterostructural precipitates, and well predicted the potential prospects. The high solubility limit of Sb not only reduced the carrier concentration nH but also significantly optimized the valence band structure and improved the Seebeck coefficient, thereby enhancing the weight mobility μw in the all-temperature region. Furthermore, the additional SnS, which tends to exist as precipitates with different micrometer-scale sizes, enhanced low-medium-frequency phonon scattering in a wider frequency range except for point defects scattering, suppressing the lattice thermal conductivity to 0.55 W m−1 K−1. As a result of this synergistic effect, a high B-factor of ∼0.82 greater than triple pure SnTe was obtained in Sn0.91Sb0.09Te-10%SnS, with an enhanced zT of ∼1.15 at 850 K. More importantly, the high B-factor accurately predicted an excellent zT value of ∼1.65 at the optimal Fermi level, which highlights the great potential of Sn1-xSbxTe-y%SnS-based materials. This work provides an effective route for stepwise optimization of electrical and thermal performance from the B-factor perspective and has guiding significance for other thermoelectric materials. [ABSTRACT FROM AUTHOR]

Increasing the figure of merit ZT of thermoelectric (TE) alloys is a challenge that is currently attempted through various metallurgy methods, including nanostructuring and dislocation engineering. Microstructures with such a level of complexity raise questions about the mechanical reliability of these new materials. Indeed, despite the values of hardness and elastic modulus known for the clear majority of TE materials, the data on deformation mechanisms are still rare. Focusing on the nanostructured p-type half-Heusler Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2, our multi-scale study aims to analyze the deformation mechanisms. Experiments conducted at macro-, meso-, and micro-scale are designed to trigger and assess plasticity mechanisms. Compression testing on bulk samples subject to a confining pressure environment and temperature leads to an exclusive brittle failure. The mixed-mode failure mechanisms involve switching between intra- and inter-granular crack propagation, depending on the grain size met by the crack tip. Cube-corner nanoindentation at meso-scale generates cracks and enables fracture toughness estimation, while TEM analysis of the crack tip area confirms no dislocation activity and 3D-Electron Back Scattered Diffraction technique confirms the mixed crack propagation behavior. At micro-scale, micro-pillar compression stress-strain curves and failure mechanisms are comparable with bulk samples testing analysis. These results can be used to provide design guidelines for more crack-resistant TE alloys. [ABSTRACT FROM AUTHOR]

As the pseudo-binary alloys between GeTe and Sb2Te3, GeSbTe-based compounds are promising thermoelectric materials. Although Ge2Sb2Te5 and GeSb2Te4 have widely been studied, the thermoelectric properties of GeSb4Te7 have not been well understood yet. In this work, we design a series of GeSb4-xBixTe7 solid solutions and systematically study the variation in the crystal structure, electrical, and thermal transport properties. Alloying Bi effectively reduces the carrier concentration and, thus, enhances the Seebeck coefficient. Meanwhile, the thermal conductivity is greatly reduced via large mass fluctuations. A maximum zT of 0.69 at 550 K and an average zT value of 0.52 between 300 and 700 K have been achieved for GeSb1.5Bi2.5Te7. These findings will promote the understanding and development of GeSbTe-based thermoelectric materials. [ABSTRACT FROM AUTHOR]

The recently discovered ductile/plastic inorganic semiconductors pave a new avenue toward flexible thermoelectrics. However, the power factors of current ductile/plastic inorganic semiconductors are usually low (below 5 µW cm−1 K−2) as compared with classic brittle inorganic thermoelectric materials, which greatly limit the electrical output power for flexible thermoelectrics. Here, large plasticity and high power factor in bulk two‐dimensional van der Waals (2D vdW) single‐crystalline SnSe2 are reported. SnSe2 crystals exhibit large plastic strains at room temperature and they can be morphed into various shapes without cracking, which is well captured by the inherent large deformability factor. As a semiconductor, the electrical transport properties of SnSe2 can be readily tuned in a wide range by doping a tiny amount of halogen elements. A high power factor of 10.8 µW cm−1 K−2 at 375 K along the in‐plane direction is achieved in plastic single‐crystalline Br‐doped SnSe2, which is the highest value among the reported flexible inorganic and organic thermoelectric materials. Combining the good plasticity, excellent power factors, as well as low‐cost and nontoxic elements, bulk 2D vdW single‐crystalline SnSe2 shows great promise to achieve high power density for flexible thermoelectrics. [ABSTRACT FROM AUTHOR]

The fact that the thermoelectric performance is far inferior to that of p-type PbTe has inspired many strategies to develop n-type PbTe thermoelectrics. Alloying PbS in n-type PbTe effectively changes the shape of a valley to trigger a heavier conduction band for improving the Seebeck coefficient, while the resulting small orbital overlap inevitably leads to phase separation hindering electron transport. The effect of vacancies on the solubility of sulfur in n-type PbTe is ambiguous; especially, the heterostructure due to phase separation in high-content PbS-alloyed PbTe also requires sufficient modification to optimize the electroacoustic transport. This motivates the current work on the introduction of vacancies by charge-balancing doping via Sb2Te3 and discovers striking new insight that the introduced vacancies can induce a new heterostructure of Pb2Sb2S5 and suppress the aggregation of Sb and PbS in high-solubility n-type PbTe–PbS. The modification of the band structure and optimization of the electron transport give rise to a prominent enhancement in electronic performance. Furthermore, the Debye–Callaway model validates the dramatic contribution of vacancy aggregation and heterostructures to lattice thermal conductivity. As a result, the synergistic modulation of electroacoustic characteristics achieves a significant improvement in both the maximum zT and the near-room-temperature zT. Understanding such unique findings is critical for applicability to other thermoelectric materials. [ABSTRACT FROM AUTHOR]

First‐principles calculation and Boltzmann transport theory have been combined to comparatively investigate the integration of Crystal Orbital Hamilton Populations (−ICOHP), band structures, phonon spectrums, lattice thermal conductivities, electronic transport properties, Seebeck coefficients, and thermoelectric figure of merits of β‐VA monolayers (Sb, As, and P). Calculations reveal that the thermoelectric properties increase with the decrease of the bond strength, which should be mainly due to the lower lattice thermal conductivity, suitable band gap, and weakened coupling of electrons and phonons. It is also found that the ZT value of the β‐Sb monolayer for the electronic along the x direction is the best among the β‐VA monolayers. Furthermore, the origin of the lowest lattice thermal conductivity of the β‐Sb monolayer in the β‐VA monolayers (Sb, As, and P) may be attributed to the more phonon scattering channels (P3) and the lower phonon velocity (v).The derived results are in good agreement with other theoretical results in the literature, and could provide a deep understanding of thermoelectric properties of the β‐VA monolayer materials. [ABSTRACT FROM AUTHOR]