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Emitted photons stemming from the radiative recombination of electron–hole pairs carry chemical potential in radiative energy converters. This luminescent effect can substantially alter the local net photogeneration in near-field thermophotovoltaic cells. Several assumptions involving the luminescent effect are commonly made in modeling photovoltaic devices; in particular, the photon chemical potential is assumed to be zero or a constant prescribed by the bias voltage. The significance of photon chemical potential depends upon the emitter temperature, the semiconductor properties, and the injection level. Hence, these assumptions are questionable in near-field thermophotovoltaic devices with nanoscale separation distances between the emitter and the cell. In the present work, an iterative solver that combines fluctuational electrodynamics with the drift-diffusion model is developed to tackle the coupled photon and charge transport problem, enabling the determination of the spatial profile of photon chemical potential beyond the detailed balance approach. The difference between the results obtained by allowing the photon chemical potential to vary spatially and by assuming a constant value demonstrates the limitations of the conventional approaches. This study is critically important for performance evaluation of near-field thermophotovoltaic systems with nanoscale vacuum gaps. [ABSTRACT FROM AUTHOR]

The output power of thermophotovoltaic (TPV) cells may be greatly increased when the gap between the emitter and cell is reduced to submicron distances (near-field regime), at which photon tunneling due to evanescent waves becomes important. Accurate modeling of TPV cells in these conditions is crucial for the design and optimization of near-field TPV systems. The conventional or standard modeling method uses the summation of the dark current and the short-circuit current, while the direct method applies the photon chemical potential. It has been shown that the two methods are linked through a modification of the direct method using Wien's approximation. By contrasting different modeling approaches, we quantitatively analyze the effects of evanescent waves on the TPV cell performance parameters, especially the dark current, for different emitter and cell materials in the near-field regime. Our results show that the saturation current by radiative recombination is strongly affected by evanescent waves and the bandgap energy. The current-voltage characteristics calculated by different modeling methods are displayed to demonstrate that a constant saturation current typically used in the standard method could cause substantial error in the near-field regime. For a TPV system with an emitter operating at relatively low temperatures, we show that it is necessary to include the photon chemical potential in the computation of the net radiative heat transfer between the emitter and receiver. [ABSTRACT FROM AUTHOR]

We demonstrate GaAs thermophotovoltaic (TPV) devices with a patterned dielectric back contact (PDBC) architecture, featuring a dielectric spacer between the semiconductor and back metal contact over most of the back surface for high reflectance, and metal point contacts over a smaller area for electrical conduction. In the TPV application, high sub-bandgap reflectance is needed to reflect unused sub-bandgap photons to the thermal emitter to minimize energy losses in this portion of the thermal spectrum. We explore different PDBC fabrication processes with SU-8 and SiO 2 dielectric spacer layers to maximize sub-bandgap reflectance while minimizing series resistance to increase TPV conversion efficiency. We successfully demonstrate GaAs SU-8 PDBC TPV devices with 2200 °C blackbody-weighted sub-bandgap reflectance of 94.9% and 96.5% with and without a front metal grid, respectively. This is 0.7% and 2.3% (absolute) higher than the mean sub-bandgap reflectance of 94.2% for GaAs baseline TPV devices with 100% Au back contact with front metal grid. Lower sub-bandgap reflectance in TPV devices with front grids indicates the front grid induces light scattering leading to additional parasitic absorption in the TPV device. We also show that for higher contact coverage fractions, the PDBC reflectance cannot in general be treated by a linear interpolation using simple 1D transfer matrix method modeling and should be treated instead as a diffraction grating by solving Maxwell's equations in 3D. • We explore different patterned dielectric back contact (PDBC) fabrication processes with SU-8 and SiO 2 for TPV cells. • Sub-bandgap reflectance over 96% demonstrated using dielectric-metal point contact rear mirror structure, a gain of >1%. • PDBC structures should be modeled as a 3-dimensional diffraction grating by solving Maxwell's equations. • Front grids increase diffuse reflectance thus increasing absorption in the device. [ABSTRACT FROM AUTHOR]