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In this study, we investigate the influence of an overlap between the gate and source/drain regions of a-Si:H thin film transistors (TFTs) on their electrical characteristics under tensile or compressive strain through experiment and mechanical simulation. The strain distribution in the a-Si:H TFT for a bending radius of 2mm reveals that the strain at both ends of the TFT is ten times larger than that at the source-drain current path. The overlap lowers the stress sustained by the TFT in the region comprised between the channel and the gate insulator; therefore, TFTs with the overlap operate even at a tensile strain of 2.54%. In particular, the overlap is remarkably effective on relaxing the stress sustained in the interface between the gate insulator and the gate electrode, consequently improving the electrical stability of the bent TFT. [ABSTRACT FROM AUTHOR]

This study examines the effect of microwave annealing upon the electrical characteristics of a representative ZnO thin-film transistor (TFT) deposited on a flexible plastic substrate. After microwave irradiation, the mobility of the TFT is increased from 0.2 to 1.5 cm²/(V s) and its on/off ratio increases from 36.5 to 6.9 x 106. The photoluminescence study reveals that the concentration of oxygen vacancies increases remarkably when the ZnO thin films are exposed to microwave radiation. In this paper, in addition to the results mentioned above, the correlation between the photoluminescence and electrical characteristics is discussed and the electrical characteristics of the ZnO TFT under strain are analyzed. [ABSTRACT FROM AUTHOR]

Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of 150 °C by spin coating in this work. The SiO2 bottom- and Al2O3 top-gate field-effect TFTs with p channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and 2.38 cm2/V s, respectively. The operating gate voltages for the top-gate transistor with an Al2O3 dielectric layer are actually lower, compared with the SiO2 bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter. [ABSTRACT FROM AUTHOR]

In this study, we investigate the electrical characteristics of bendable a-Si:H thin-film transistors (TFTs) with various channel widths as a function of bending stress. Compared with a narrower channel TFT, a wider channel TFT exhibits a stable performance even at a bending strain of 1.3%. Our stress and strain distribution analysis reveals an inverse relationship between the channel width and the channel stress. As the channel width widens from 8 to 50 μm, the stress experienced by the middle channel region decreases from 545 to 277 MPa. Moreover, a 50 μm-channel-width TFT operates stably even after a 15 000 bending cycle while the 8 μm-channel-width TFT fails to operate after a 2000 bending cycle. [ABSTRACT FROM AUTHOR]

We construct fully transparent nano-floating gate memory devices on a glass substrate. These memory thin-film transistors consist of channel layers of ZnO films, electrodes of Al/ITO, and floating gate nodes of Al nanoparticles, exhibiting a transmittance of [?] 71% in the visible region. Their electron mobility, on/off ratio, and threshold voltage shift are estimated to be 0.92 cm2 V [?] 1 s [?] 1, about 104, and 3.1 V, respectively. Moreover, their programming/erasing, endurance and retention are characterized in this study. Our study suggests that our memory devices have great potential for realizing transparent systems-on-glass. [ABSTRACT FROM AUTHOR]

Flexible electronic devices which are lightweight, thin and bendable have attracted increasing attention in recent years. In particular, solution processes have been spotlighted in the field of flexible electronics, since they provide the opportunity to fabricate flexible electronics using low-temperature processes at low-cost with high throughput. However, there are few reports which describe the characteristics of electronic devices on flexible substrates. In this study, we fabricated flexible thin-film transistors (TFTs) on plastic substrates with channel layers formed by the spin-coating of ZnO nanoparticles and investigated their electrical properties in the flat and bent states. To the best of our knowledge, this study is the first attempt to fabricate fully functional ZnO TFTs on flexible substrates through the solution process. The ZnO TFTs showed n-channel device characteristics and operated in enhancement mode. In the flat state, a representative ZnO TFT presented a very low field-effect mobility of 1.2 x 10[?]5 cm2 V[?]1 s[?]1, while its on/off ratio was as high as 1.5 x 103. When the TFT was in the bent state, some of the device parameters changed. The changes of the device parameters and the possible reasons for these changes will be described. The recovery characteristics of the TFTs after being subjected to cyclic bending will be discussed as well. [ABSTRACT FROM AUTHOR]