1. In-situ study of the crystallization of amorphous CuInSe2 thin films and the effect of InCl3 treatment.
- Author
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Palmiotti, Elizabeth, Belfore, Benjamin, Poudel, Deewakar, Marsillac, Sylvain, and Rockett, Angus
- Subjects
- *
THIN films , *CRYSTALLIZATION , *GLASS , *COPPER indium selenide , *TREATMENT effectiveness , *X-ray diffraction - Abstract
• Crystallization temperature range independent of treatment and substrate. • Crystallization rate increases with Na 2 O and an InCl 3 solution treatment. • InCl 3 necessary for grain size enhancement. Amorphous CuInSe 2 films were deposited by rf-magnetron sputtering onto soda-lime glass and silicon substrates. Some were treated with an InCl 3 solution. The films were annealed in a nitrogen environment and studied using in-situ high-temperature x-ray diffraction. CuInSe 2 recrystallization began at ∼x223C270 °C and all samples showed increasing crystallinity up to ∼x223C380 °C. The onset and completion temperatures for crystallization varied minimally between samples. The as-deposited films (no InCl 3) showed CuSe phase formation at intermediate temperatures (180–250 °C). Na 2 O from the soda-lime glass increased net rate of crystallization. InCl 3 resulted in an even greater increase to crystallization rate and largely improved the final crystalline quality. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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