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Deals with a study which utilized the metalorganic chemical vapor deposition (MOCVD) technique for the epitaxial growth of platinum thin films. Significance of MOCVD to thin film growth; Details on the deposition of thin films; Results of the x-ray diffraction analysis.

Considers the effects of growth parameters and substrate type on the characteristics of the metalorganic chemical vapor deposition-grown barium titanate thin films. Method used to study the surface and the cross-sectional morphology of the films; Surface morphology and microstructure of the thin films; Substrate effect on the thin film growth.

PbTiO3 thin films have been grown successfully for the first time by using purely metalorganic precursors, namely, titanium isopropoxide and tetraethyllead. A scanning electron micrograph showed dense and noncolumnar growth with good surface morphology. Temperature-dependent x-ray diffraction studies provide evidences for a reversible tetragonal to cubic phase transition around 540 °C. At room temperature, the dielectric constant is about 180. [ABSTRACT FROM AUTHOR]

Superconducting Tl2CaBa2Cu2Oy thin films have been successfully grown on the single-crystal sapphire (1102) substrate by using the metalorganic chemical vapor deposition technique. The growth rate of the films was about 5 μm/h. The as-deposited film was post-annealed in a partially sealed ceramic crucible in the presence of a Tl2Ca2Ba2Cu3Oy pellet to achieve the superconducting phase. The x-ray data show strong diffraction from the Tl2CaBa2Cu2Oy superconducting phase in addition to the trace amounts of Ca2CuO3 and BaCO3. Superconducting transition temperatures with onset above 100 K and zero resistance at 94 K can be obtained by further heat treatment at 500 °C in oxygen. [ABSTRACT FROM AUTHOR]