1. Effect of In-Situ H Doping on the Electrical Properties of In 2 O 3 Thin-Film Transistors.
- Author
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Hu, Peixuan, Gao, Zhixiang, Yang, Lu, Li, Wanfa, Liu, Xiaohan, Li, Ting, Qian, Yujia, Liang, Lingyan, Hu, Yufang, and Cao, Hongtao
- Subjects
THIN film transistors ,X-ray photoelectron spectroscopy ,ATOMIC force microscopes ,THIN films ,TRANSISTORS ,THRESHOLD voltage ,METAL oxide semiconductors - Abstract
In this article, this research demonstrates the influence of in-situ introduction of H
2 into the working gas on the physical properties of post-annealed In2 O3 thin films and the performance of associated devices. A gradual increase in the H2 ratio leads to improved film quality, as indicated by spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and atomic force microscope analyses showing a reduction in defect states such as band-tail states and VO in the film, and a smoother surface morphology with the root mean square roughness approximately 0.446 nm. Furthermore, this hydrogen doping effect results in a distinct shift in the device's threshold voltage toward the positive direction, and an improvement in the field-effect mobility and subthreshold swing. Consequently, a high-performance In2 O3 :H TFT is developed, exhibiting a field-effect mobility of 47.8 cm2 /Vs, threshold voltage of −4.1 V and subthreshold swing of 0.25 V/dec. These findings highlight the potential of in-situ H doping as a promising approach to regulate In2 O3 -based TFTs. [ABSTRACT FROM AUTHOR]- Published
- 2024
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