1. The Impact of Ultra Thin ALD TiN Metal Gate on Low Frequency Noise of CMOS Transistors.
- Author
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Mercha, A., Singanamalla, R., Subramanian, V., Simoen, E., Sansen, W., Groeseneken, G., De Meyer, K., and Decoutere, S.
- Subjects
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NOISE , *COMPLEMENTARY metal oxide semiconductors , *TRANSISTOR-transistor logic circuits , *TRANSISTORS , *SEMICONDUCTORS , *BORON - Abstract
Inserting a thin metal layer at the Poly-Si/dielectric interface to eliminate gate depletion and boron penetration has recently attracted a considerable attention from the engineering community due to the compatibility of this metal gate stack with conventional poly-Si technology. In this contribution we use CMOS transistors with TiN metal gate of different number of deposition cycles on 2nm SiON gate oxide as a test vehicle to evaluate the work function control and eventual modifications of the interfaces and gate oxide quality. The flexibility in the work function control comes at a cost of degraded performances for lowest deposition cycles corresponding to the band edge work functions. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]
- Published
- 2007
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