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Sn-doped β-GaO nano- and micrometer particles have been successfully synthesized by chemical vapor deposition process using CaF as dispersant and Ni ions as catalyst. X-ray diffraction indicates that the product was predominantly a single β-GaO phase with high purity. SEM shows that the product was formed by nano- and micrometer particles with the diameters ranging from 300 to 500 nm. A broad and strong emission band ranging from 300 to 650 nm exists because of larger surface area. The growth process of β-GaO nano- and micrometer particles agrees with the vapor-solid growth mechanism. [ABSTRACT FROM AUTHOR]

β-GaO nanorods have been synthesized by chemical vapor deposition using CaF as dispersant and Ni ions as catalyst. The composition, crystal structure, morphology, and optical property were characterized. X-ray diffraction data indicate the product to be high purity β-GaO. The nanorods are 40-100 nm in diameter and about several microns in length and present a core-shell structure. A broad and strong emission band ranging from 300 to 650 nm exists with four Gaussian bands centered at 357 (UV), 420 (blue), 475 (dark blue), and 529 nm (green). Growth of β-GaO nanorods agrees with the vapor-solid growth mechanism. [ABSTRACT FROM AUTHOR]

Abstract: Amorphous C–Si–O particles, prepared by pyrolyzing PDMS in a horizontal furnace using the carrier gas N2/H2 at 900°C, were characterized by electron microscopy, X-ray diffraction, FTIR spectroscopy, X-ray photoelectron spectroscopy and fluorescence spectroscopy. The particles possess four luminescence peaks at 440, 465, 533 and 620nm, and produce stable red, green or blue light emissions at room temperature when irradiated with appropriate wavelengths, the four peaks attribute to different defect centers in the particles. And the particles exhibit the highest photoluminescence intensity when annealed at 600°C. [ABSTRACT FROM AUTHOR]

Abstract: Cerium-doped Bi2Ti2O7 (BCTO) thin films have been grown on P-type Si 〈100〉 substrates by a chemical solution deposition (CSD) method. X-ray diffraction (XRD) analysis was carried out, which confirms that the crystallinity of the films increased with the enhancement of annealing temperature ranging from 550 to 750°C. The chemical stability of Bi2Ti2O7 was improved, since some Bi ions are substituted with the Ce ions. The AFM image of surface morphology of (Bi0.88Ce0.12)2Ti2O7 thin film was investigated. The section morphology was studied and the thickness was measured. The relaxation time and the leakage current behavior of (Bi0.88Ce0.12)2Ti2O7 thin films annealed at various temperatures were discussed. The current–voltage characteristics were explored, accordingly dielectric constant (DC) and dielectric loss (DL) were calculated at the frequency ranging from 1 to 2000kHz. At the characteristic frequency of 100kHz, DC and DL are calculated to be 214 and 0.06 respectively. The results showed that the film annealed at 700°C had good insulating properties and was considered using in advanced MOS transistors. [Copyright &y& Elsevier]

Abstract: Lanthanum-doped Bi2Ti2O7 thin films have been prepared using chemical solution deposition method, and then treated by different annealing temperatures. X-ray diffraction analysis confirmed that the crystallinity of the films increased with increasing annealing temperature and the optimum temperature was found to be 800 °C. The effects of relaxation time and various annealing temperatures and films thickness on the leakage current density were investigated. The results showed that the film annealed at 800°C had good insulating properties and can be considered using in advanced MOS transistors. [Copyright &y& Elsevier]