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The mechanism responsible for the charge transport in thin ferroelectric Hf0.5Zr0.5O2 films has been studied. It is shown that in these films the transport mechanism is phonon-assisted tunneling between the traps. The optimal thickness of dielectric film for TiN/Hf0.5Zr0.5O2/Pt structures is determined. As a result of comparing the experimental current–voltage (I–V) characteristics of TiN/Hf0.5Zr0.5O2/Pt structures with the calculated ones, the thermal and optical energies of the traps are determined and the concentration of the traps is estimated. A comparison between the transport properties of ferroelectric and amorphous Hf0.5Zr0.5O2 films is carried out. It is shown that the charge transport mechanism in this dielectric does not depend on its crystalline phase. A method for decreasing leakage currents in Hf0.5Zr0.5O2 is proposed. A study of the resource of repolarization cycles for TiN/Hf0.5Zr0.5O2/TiN metal-dielectric-metal (MDM) structures fully grown by atomic layer deposition (ALD) has been carried out.

The structural and electrical properties of materials based on hafnium oxide grown by atomic layer deposition (ALD) are analyzed. The possibility and prospects of the use of their nanoscale films in nonvolatile memory are considered. The possibility of scaling Ferroelectric random access memory (FRAM) to subμm dimensions while preserving the ferroelectric properties is shown.

The charge transport mechanism in thin amorphous and ferroelectric Hf0.5Zr0.5O2 films has been studied. It has been shown that the transport mechanism in studied materials does not depend on the crystal phase and is phonon-assisted tunneling between traps. The comparison of the experimental current–voltage characteristics of TiN/Hf0.5Zr0.5O2/Pt structures with the calculated ones provides the trap parameters: thermal energy of 1.25 eV and the optical energy of 2.5 eV. The trap concentration has been estimated as ~1019–1020 cm–3.

Сombining the sol–gel method and pen plotter printing, using the hydrolytically active heteroligand complex [Co(C5H7O2)2-x(C4H9O)x] as a component of a new functional ink, Co3O4 thin films were produced on the surface of substrates of various types. The influence of synthesis conditions and print modes on the microstructure, optical, electrophysical and sensor properties of planar nanomaterials was comprehensively studied. The optical band gap energies associated with charge transfer for transitions O2-→Co3+ and O2-→Co2+ of the obtained thin films were evaluated. Using Kelvin probe force microscopy and impedance spectroscopy, the electrophysical characteristics (the electronic work function of the film surface, the temperature dependence of electrical conductivity, and the activation energy of electrical conductivity) of the obtained Co3O4 films were determined. The sensitivity of printed cobalt(II, III) oxide thin films with respect to various gases (Н2, СН4, СО and NO2) was studied. It was established that the obtained samples demonstrated the highest sensor response when detecting CO and NO2 in the operating temperature range of 150–200°С. The prospects of the proposed synthesis method and printing technology when forming Co3O4 thin-film nanostructures to create electrodes of supercapacitors and receptor components of resistive CO and NO2 gas sensors were shown.

This work demonstrates by in vacuo X-ray photoelectron spectroscopy and grazing-incidence X-ray diffraction that Ru(EtCp)2 and O* radical-enhanced atomic layer deposition, where EtCp means the ethylcyclopentadienyl group, provides the growth of either RuO2 or Ru thin films depending on the deposition temperature (Tdep), while different mechanisms are responsible for the growth of RuO2 and Ru. The thin films deposited at temperatures ranging from 200 to 260 °C consisted of polycrystalline rutile RuO2 phase revealing, according to atomic force microscopy and the four-point probe method, a low roughness (∼1.7 nm at 15 nm film thickness) and a resistivity of ≈83 µΩ cm. This low-temperature RuO2 growth was based on Ru(EtCp)2 adsorption, subsequent ligand removal, and Ru oxidation by active oxygen. The clear saturative behavior with regard to the precursor and reactant doses and each purge time, as well as the good step coverage of the film growth onto 3D structures, inherent to genuine surface-controlled atomic layer deposition, were confirmed for the lowest Tdep of 200 °C. However, at Tdep = 260 °C, a competition between film growth and etching was found, resulted in not-saturative growth. At higher deposition temperatures (300-340 °C), the growth of metallic Ru thin films with a resistivity down to ≈12 µΩ cm was demonstrated, where the film growth was proved to follow a combustion mechanism known for molecular oxygen-based Ru growth processes. However, this process lacked the truly saturative growth with regard to the precursor and reactant doses due to the etching predominance.

Hf

The plasma-enhanced atomic layer deposition (PEALD) process using Ta(OC

The multilevel resistive switching effect in Pt/HfxAl1−xOy/TiN stacks has been studied by hard X-ray photoelectron spectroscopy (HAXPES). Atomic layer deposition was used to grow HfxAl1−xOy films with graded Al depth profile, where the engineered Al concentration across the film facilitates the desired oxygen vacancies' profile. The method to derive the electrical potential profile across dielectric from the HAXPES spectra is proposed. By combining the information on the chemical state at both interfaces with the extracted potential distribution, a qualitative model for the resistive switching effect in the Pt/HfxAl1−xOy/TiN metal–insulator–metal stack is proposed. According to this model, the conductive filaments controlling the resistivity are formed by the electric field driven condensation of the charged oxygen vacancies in the oxide.

A nonvolatile memory cell prototype based on the effect of resistive switching in thin Hf x Al1 − x O y oxide films grown by atomic layer deposition (ALD) with a Al depth-graded profile has been developed. This prototype imitates the arrangement of memory cells between the metallization layers of integral circuits. The obtained results are much superior to the parameters of conventional flash memory cells in increasing the reset speed and decreasing the reset voltage.

The crystalline structure and electrical response of La-doped HfO2-ZrO2 thin films of which processing temperature did not exceed 400 °C were examined, where the La-doping concentration was varied from zero to ≈2 mol. %. The film structure and associated properties were found to vary sensitively with the minute variation in the La-concentration, where the ferroelectric response at low La-concentration ( ≈1 mol. %, which was accompanied by a significant increase in dielectric permittivity. La-doping was found to be very effective in inhibiting the monoclinic phase formation and in decreasing the leakage current. Notably, the high coercive field, which was one of the most significant problems in this material system, could be decreased by ∼35% at the most promising La-concentration of 0.7 mol. %. As a result, a highly promising field cycling endurance up to 1011 cycles could be secured while maintaining a high remnant polarization value (≥25 μC/cm2). This is one of the best results in this field of the authors' knowledge.

The development of the reference samples SPAM-20 and SPAM-100 for the spatial characteristics of nanostructures, based on periodic multilayer Al2O3/TiO2 coatings and intended for monitoring measurement accuracy and certification of x-ray reflectometry measurement techniques, is discussed. The metrological characteristics of these standard samples are examined.

Comparative analysis of atomic-layer deposition of titanium dioxide in precursor systems Ti(OCH3)4-H2O and Ti(OC2H5)4-H2O demonstrated that the growth rate of titanium dioxide produced by atomic-layer deposition in the Ti(OCH3)4-H2O system can be adequately estimated using a model taking into account the number and size of ligands in the metal-containing precursor. Studies in simulated body fluids demonstrated that polycrystalline anatase TiO2 coatings are capable of accelerated osteointegration, which makes this precursor promising for development of new biomedical articles.

Bioactive materials are of great interest due to a strong bond between bioactive surface and bone material. Materials and techniques, used for pretreatment of implant surfaces, have a number of considerable disadvantages. Bioactive thin films, grown by Atomic Layer Deposition, can solve a number of problems of pretreatment, increase the quality and lifetime of implant. The article describes a structural approach to theoretical prediction of bioactive materials as well as experiments performed on new bioactive TiO2 surfaces with a different crystalline structure.

The atomic layer deposition of titanium oxide in the precursor systems Ti(OCH3)4-H2O and Ti(OC2H5)4-H2O was compared. The growth rate of titanium oxide formed by the atomic layer deposition in the Ti(OCH3)4-H2O system can be adequately estimated with due to regard for the number and size of ligands of a metal-containing precursor. The study in simulated body fluid solutions showed that polycrystallin TiO2 coatings with anatase structure are prone to accelerated osseointegration and, consequently, promising for the development of new biomedical products.

Quaternary alloyed HfAlTiO thin (~ 4–5 nm) films in the wide range of Ti content have been grown on Si substrates by Atomic Layer Deposition technique, and the effect of both the film composition and the interfacial reactions on the electrical properties of HfAlTiO films is investigated. It is shown that depending on the Ti content, the permittivity and the leakage current density Ileak in HfAlTiO films vary in the range k = 18 ÷ 28 and 0.01–2.4 A cm− 2, respectively. The incorporation of ultra thin SiN interlayer in Al/HfAlTiO/SiN/Si stack gives rise to the sharp (× 103) decrease of the Ileak ~ 6 · 10− 5 A/cm2 at the expense of the rather low capacitance equivalent thickness ~ 0.9 nm.

TiO 2 coatings were grown on Ti and Si by Atomic Layer Deposition (ALD) from titanium ethoxide and water at 300 °C in a wide range of the reaction cycles number N = 100–2000. TiO 2 coatings were found to be amorphous at low value of N N ≥ 300 revealed anatase polycrystalline structure. The TiO 2 coatings bioactivity was evaluated by hydroxyapatite forming ability by the technique of soaking in Simulated Body Fluid (SBF). Correlation between bioactivity and structural properties of TiO 2 was determined. X-ray diffraction and scanning electron microscopy with electron probe microanalysis showed that amorphous TiO 2 coating did not induce the hydroxyapatite growth whereas anatase resulted in the hydroxyapatite forming on the samples surfaces which confirmed TiO 2 anatase bioactivity.

A dependence of structural properties of TiO 2 films grown on both Si- and Ti-substrates by atomic layer deposition (ALD) at the temperature range of 250–300 °C from titanium ethoxide and water on the number of reaction cycles N was investigated using Fourier-transform infrared (FTIR) spectroscopy and X-Ray diffraction (XRD). TiO 2 films grown on both Si- and Ti-substrates revealed amorphous structure at low values of N N up to values 400–3600 resulted in the growth of polycrystalline TiO 2 with structure of anatase on both types of substrates and according to XRD-measurements the sizes of crystallites rose with the increase of N . The maximum anatase crystallite size for TiO 2 grown on Ti-substrate was found to be on ∼35% lower in comparing with that for TiO 2 grown on Si-substrate. A use of titanium methoxide as a Ti precursor with the ligand size smaller than in case of titanium ethoxide allowed to observe an influence of the ligand size on both the growth per cycle and structural properties of TiO 2 . The average growth per cycle of TiO 2 deposited from titanium methoxide and water (0.052 ± 0.01 nm/cycle) was essentially higher than that for TiO 2 grown from titanium ethoxide and water (0.043 ± 0.01 nm/cycle). Ligands of smaller sizes were found to promote the higher crystallinity of TiO 2 in comparison with the case of using the titanium precursor with ligands of bigger sizes.

International audience; The modification of the surface of low-density polyethylene (LDPE) and polyurethane (PU) by means of the pulsed ion-plasma deposition of nanostructural carbon coatings at 20–60°C has been studied. The effect of this low-temperature treatment on the biocompatibility of the LDPE and PU has been assessed. Optimum technological parameters for the formation of mosaic carbon nanostructures with a thickness of 0.3–15 nm and a cluster lateral size of 10–500 nm are determined. These structures give the polymer surface increased hemocompatible properties. The surface of samples was studied by methods of scanning electron microscopy, scanning probe microscopy, and Raman spectroscopy. The effect of the UV light of a krypton lamp (λ = 123.6 nm) and white synchrotron radiation on the surface of poly(methyl methacrylate) (PMMA) preliminarily treated in an oxygen-containing RF discharge plasma has been investigated by varying the duration of exposure (from several minutes to several dozen minutes) and the residual gas pressure (2 and 100 Pa). This processing ensures the smoothing of the surface relief on micro- and nanoscale levels, which can improve the biocompatibility of the modified PMMA film surface. The principles of a two-stage technology for rendering the titanium (implant) surface biocompatible are developed. This technology consists of the chemical pretreatment of the surface for creating a microrelief (2–3 μm roughness), followed by the deposition of a titanium oxide film with controlled composition (TiO2) and thickness (10–60 nm). The influence of the mechanisms and technological parameters of the oxide film deposition on its composition, structure, uniformity (conformal coating of involved shapes), and biocompatibility of the modified surface have been studied.

The influence of La content on the ferroelectric properties of HfO2-ZrO2 thin films was examined for integrated electrostatic supercapacitor applications. A transition from ferroelectric to antiferroelectric-like behavior, accompanied by a significant increase of energy storage density value and efficiency, was observed with the increasing La concentration in La-doped HfO2-ZrO2-based capacitor structures, where the processing temperature remained below 400 °C. The combination of high energy storage density value (≈50 J/cm3) with high efficiency (70%) was obtained for the film with the highest La content (2.0 mol. %). The 2.0 mol. % La-doped HfO2-ZrO2-based capacitor structures were field cycled up to 109 times and were found to provide >40 J/cm3 energy storage density along with up to 80% efficiency. Moreover, the high thermal stability of such capacitors was confirmed. The founded property combination makes the La-doped HfO2-ZrO2 thin films suitable for integrated energy storage and pulse-power devices.The influence of La content on the ferroelectric properties of HfO2-ZrO2 thin films was examined for integrated electrostatic supercapacitor applications. A transition from ferroelectric to antiferroelectric-like behavior, accompanied by a significant increase of energy storage density value and efficiency, was observed with the increasing La concentration in La-doped HfO2-ZrO2-based capacitor structures, where the processing temperature remained below 400 °C. The combination of high energy storage density value (≈50 J/cm3) with high efficiency (70%) was obtained for the film with the highest La content (2.0 mol. %). The 2.0 mol. % La-doped HfO2-ZrO2-based capacitor structures were field cycled up to 109 times and were found to provide >40 J/cm3 energy storage density along with up to 80% efficiency. Moreover, the high thermal stability of such capacitors was confirmed. The founded property combination makes the La-doped HfO2-ZrO2 thin films suitable for integrated energy storage and pulse-power devices.

The structure and chemical composition of the titanium dioxide thin films formed by atomiclayer deposition (ALD) from tetraethoxytitanium and water precursors were studied by Rutherford backscattering spectrometry, X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, Fourier transform infrared spectroscopy, and atomic force microscopy. The deposited films were demonstrated to have good stoichiometry and anatase type polycrystalline structure. The growth per cycle of titanium dioxide was calculated by an ALD model taking into account the sizes and number of ligands in reactant molecules.

Using the methods of Rutherford backscattering spectrometry, X-ray photoelectron spectroscopy, X-ray diffraction in the geometry of the grazing beam, and Fourier transform infrared spectroscopy, we studied the chemical composition and structure of thin films of titanium dioxide formed by atomic layer deposition from tetraethoxytitanium and water. It is shown that the films obtained are characterized by a high stoichiometry of composition and by amorphous or polycrystalline structure of the anatase modification, depending on the number of reaction cycles. Using a model of the process of atomic layer deposition that takes into account the size and number of ligands of the reacting molecules, we calculated the amount of titanium dioxide deposited in a single reaction cycle.

Hafnia was considered as a paraelectric material until observation of ferroelectric effect in thin films of doped HfO2 after high-temperature annealing (~1000°C). [T.S. Böscke et al., Appl. Phys. Lett. 99, 102903 (2011); S. Mueller et al., Adv. Function. Mater. 22, 2412 (2012)]. Of particular interest is the fact that ferroelectricity was also demonstrated in thin of the solid solution Hf0.5Zr0.5O2 which requires annealing at significantly lower temperatures [J. Müller et al., Appl. Phys. Lett. 99, 112901 (2011); J. Müller et al., Nano Lett. 12, 4318 (2012); M.H. Park et al., Appl. Phys. Lett. 102, 112914 (2013); A. Chernikova et al., Microelectron. Eng. 147, 15 (2015)]. Ferroelectricity in these materials is associated with the ability to stabilize noncentrosymmetric orthorhombic phase Pbc2 1 [J. Müller et al., Nano Lett. 12, 4318 (2012)]. It should be noted that the hafnia-based materials have a number of advantages over conventional ferroelectric regarding compatibility with technological processes used in microelectronics, and has already demonstrated their ability to provide very high density of elements. Taking into account advantages of the ferroelectric random access memory (FeRAM) as non-volatile, high-speed performance, high number of switching cycles, the discovery of ferroelectric effect in these materials gave an impetus for development of universal memory concept, which may lead to a significant breakthrough in the development of memory devices [M.H. Park et al., Adv. Mater. 27, 1811 (2015)]. An unsolved problem in the way of development of FeRAM-based universal memory is the spontaneous depolarization of the active medium, which leads to short data storage time (retention) that is observed in Ref. [C.-H. Cheng, A. Chin, IEEE Electron Dev. Lett. 35, 138 (2014)]. One of the possible reason of spontaneous depolarization is leakage currents through the ferroelectric thin films. High-κ Hf0.5Zr0.5O2 thin films (κ>16 depending on structure phase) can be used as sub-gate dielectrics in MOSFET and FinFET transistors instead of SiO2. Thus, it is very important to know charge transport mechanisms in thin dielectrics films to control the leakage currents for development of high quality memory devices. Purpose of the present work is to study charge transport mechanism in ferroelectric Hf0.5Zr0.5O2. Transport measurements were performed for TiN/Hf0.5Zr0.5O2/Pt structures. Test structure were fabricated with atomic layer deposition (ALD) technique. 10-nm-thick TiN layer was deposited on oxidized Si (100) substrate. Then the 10-nm-thick Hf0.5Zr0.5O2 films we deposited at 240°C from TEMAHf and TEMAZr precursors using H2O as oxygen source. Laser ellipsometry and Rutherford backscattering spectroscopy confirmed the thickness and stoichiometry of as deposited Hf0.5Zr0.5O2 films. Some samples were annealed at 400°C in N2 environment during 30sec (rapid thermal annealing, RTA). The crystalline structures of as deposited and annealed films were examined by symmetrical X-Ray diffraction (XRD). Pt top electrodes (thickness of ~30nm) were deposited through shadow mask with round holes (area is 7.1×104μm2) by electron beam evaporation on as deposited Hf0.5Zr0.5O2films and after RTA. The electronic structure of Hf0.5Zr0.5O2 was calculated within the spin polarized density functional theory using the ab initio simulation code Quantum ESPRESSO [P. Giannozzi et al., J. Phys.: Condens. Matter 21, 395502 (2009)] with B3LYP hybrid exchange-correlation functional. The oxygen vacancy was generated by the removal of an O atom, followed by relaxation of remaining atoms in 96-atom supercell. The XRD spectra of Hf0.5Zr0.5O2 films show that as deposited films have amorphous structure (a-Hf0.5Zr0.5O2), while annealed films are polycrystalline with monoclinic (P2 1/c), tetragonal (P4 2/nmc) and noncentralsymmetric orthorhombic (Pbc2 1) phases. The presence of ferroelectric properties of f-Hf0.5Zr0.5O2 films after RTA is confirmed by observing characteristic hysteresis on the P-V plate for Pt/ Hf0.5Zr0.5O2/TiN structures. Comparison of experimentally measured leakage currents-voltage dependencies at different temperatures (I-V-T) with Frenkel model of charged trap ionization returns overestimated value of dynamic permittivity with respect to predicted by ab initio calculations and underestimated value of frequency factor ν<

We report the possibility of employment of low temperature (≤330 °C) plasma-enhanced atomic layer deposition for the formation of both electrodes and hafnium-oxide based ferroelectric in the metal-insulator-metal structures. The structural and ferroelectric properties of La doped HfO2-based layers and its evolution with the change of both La content (2.1, 3.7 and 5.8 at. %) and the temperature of the rapid thermal processing (550–750 °C) were investigated in detail. Ferroelectric properties emerged only for 2.1 and 3.7 at. % of La due to the structural changes caused by the given doping levels. Ferroelectric properties were also found to depend strongly on annealing temperature, with the most robust ferroelectric response for lowest La concentration and intermediate 650 °C annealing temperature. The long term wake-up effect and such promising endurance characteristics as 3 × 108 switches by bipolar voltage cycles with 30 μs duration and ± 3 MV/cm amplitude without any decrease of remnant polarization value were demonstrated.

The tantalum oxide–platinum interface electronic properties determined by X-ray photoelectron spectroscopy are found to depend on the dielectric stoichiometry and platinum chemical state. We demonstrate the slow charging of the tantalum oxide in cases of Ta2O5/Pt and Ta2O5−y/Pt interfaces under the X-ray irradiation. This behavior is proposed to be related to the charge accumulation at oxygen vacancies induced traps. Based on the proposed methodology, we define the intrinsic conductive band offset (CBO) ∼1.3 eV (both for Ta2O5/Pt and Ta2O5−y/Pt) and CBO after the full saturation of the traps charging ∼0.5 eV, while the last one defines the energy position of charged traps below the bottom of conduction band. We demonstrate also the pining at the both Ta2O5/Pt and Ta2O5−y/Pt interfaces even in the “intrinsic” state, apparently induced by the presence of additional interfacial states. No shifts of Ta4f line and band alignment in over stoichiometric Ta2O5+x/Pt structure during X-ray irradiation, as well as t...

A combination of low-pressure mercury lamp radiation-assisted processes for removal of carbon contaminants from the silicon substrate, SiO 2 chemical vapor deposition (CVD) from an Si 2 H 6 /O 2 mixture, and annealing of the deposited layers has been employed to fabricate dielectric-semiconductor structures with sufficiently good properties at low temperature (250°C) using gas-phase techniques only.

The influence of a buffer (inert) gas atmosphere on structure, composition and tribological properties of MoSx films formed by pulsed laser deposition with various laser influence was investigated. The films were deposited at room temperature from an MoS1.8 target under vacuum conditions (4 × 10-4 Pa) and in Ar atmosphere at a gas pressure varying from 0.7 Pa to 4 Pa. Ablation under vacuum conditions using a relatively low laser fluence resulted in the deposition of amorphous films with conservation of stoichiometry. According to XPS analysis data, such films may contain many defects of chemical nature. Deposition at higher laser fluences resulted in substantial sulphur depletion and, under certain conditions, crystallization of the films. These microcrystalline films exhibited a lower friction coefficient than amorphous ones. Ablation at high laser fluences in Ar atmosphere allowed us to deposit MoSx films with various stoichiometries (x ⩽ 2.2) and tribological properties superior to those of the films deposited under vacuum conditions. These films have the amorphous structure and chemistry (according to XPS measurements) inherent in perfect MoS2.

The influence of intermediate energy ion (50 keV) irradiation on the structure and properties of amorphous carbon (a-C) graphite-like and diamond-like films was investigated. The C+ ions were implanted in a-C films during their laser plasma vacuum deposition (LPVD). The structure changes depend on the nature of the carbon films, on the fluence of irradiation and sample temperature.

Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO2/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO2 in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO2. The memristive properties of ALD grown TiN/HfO2/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware.

Using in situ x‐ray photoelectron spectroscopy we have investigated the possibility of photochemical organic contaminant removal from a silicon surface at room temperature in oxygen and fluorine containing atmospheres (O2, NF3/H 2, O2/NF3/H2). In contrast to UV irradiation in O2 and NF3/H2 reagents, the possibility of complete organic contaminant removal has been observed in O2/NF3/H2 gas mixture.

A mild N2O plasma treatment technique (low power and low substrate temperature) for carbon materials' (including graphite and carbon nanotubes) functionalization followed by subsequent high-k dielectric atomic layer deposition (ALD) was developed. It was shown that N2O plasma carbon functionalization leads to the formation of epoxide and carboxylic groups on the carbon surface which act as active centers for ALD and, as a result, conformal and uniform Al2O3 and TixAl1−xOy films' growth occurred on the carbon surfaces. It was shown that the electrical properties of multinary TixAl1−xOy oxides are more promising in comparison to single Al2O3 oxide. Some electrical properties of the TixAl1−xOy films observed were a high dielectric constant ∼19, low leakage current density (

The possibility of a low temperature technique development including combined photochemical processes of the silicon substrate cleaning, chemical vapor deposition and post treatment of SiO2 has been demonstrated.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

A versatile technique using pulsed laser-plasma ion source (PLPIS) was developed for various ion beam treatments of materials (ion implantation, ion beam mixing, and ion beam assisted deposition).