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1,350 results on '"Borghs, G."'

55. Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer

Author

Derluyn, J., Borghs, G., Boeykens, S., Germain, M., Cheng, K., Leys, M.R., Vandersmissen, R., Degroote, S., Das, J., and Ruythooren, W.

Subjects
Silicon nitride -- Electric properties, Aluminum compounds -- Electric properties, Gallium compounds -- Electric properties, High-electron-mobility transistors -- Design and construction, Physics
Abstract

An AlGaN/GaN high electron mobility transistor with a Si3N4 passivation layer is prepared that is deposited in situ in metal-organic chemical-vapor deposition reactor in the same growth sequence, as the rest of the layer stack. The SiN4 is shown to be of high quality and stoichiometric in composition.

Published
2005

56. Effect of surface localized states on conductivity in an organic crystal

Author

Reynaert, J., Poot, K., Arkhipov, V., Borghs, G., and Heremans, P.

Subjects
Tin compounds -- Electric properties, Gold -- Electric properties, Crystals -- Electric properties, Physics
Abstract

A study is carried out in which the current-voltage characteristics of perylene crystals are measured at different temperatures. The experimental data obtained are interpreted in terms of dopant-assisted charge injection across a metal-organics interface.

Published
2005

70. Influence of the morphology on the magneto-transport properties of laser-ablated ultrathin La0.7Ba0.3MnO3 films

Author

Das, A., Gordon, I., Wagner, P., Cannaerts, M., Moshchalkov, V.V., Bruynseraede, Y., Schuddinck, W., Tendeloo, G. Van, and Borghs, G.

Subjects
Thin films -- Magnetic properties, Physics
Abstract

Research into the thickness dependent properties of manganite films characterized by colossal negative magnetoresistance is presented. There were found to be three different thickness regimes with different electronic and morphological properties. The resistivity of the films rises slightly with falling thickness because of substrate-induced compressive strain.

Published
2001

72. Large-signal-modulation of high-efficiency light-emitting diodes for optical communication

Author

Windisch, R., Knobloch, A., Kuijk, M., Rooman, C., Dutta, B., Kiesel, P., Borghs, G., Dohler, G.H., and Heremans, P.

Subjects
Light-emitting diodes -- Research, Business, Computers, Electronics, Electronics and electrical industries
Abstract

Research into the dynamic behaviour of high-efficiency light-emitting diodes is presented. It was established that the small-signal time constants of light-emitting diodes are not always given by the radiative recombination lifetime.

Published
2000

73. Effect of mixing enthalpy on relaxed and strained growth of III-V(sup)I(sub)yV(sup)II(sub)1-y compound alloys using molecular-beam epitaxy

Author

Genoe, J., Nemeth, S., Grietens, B., Behet, M., Vounckx, R., and Borghs, G.

Subjects
Enthalpy -- Analysis, Crystals -- Growth, Epitaxy -- Analysis, Molecular beams -- Usage, Physics
Abstract

Results discuss a strict virtual crystal model for accurately describing the mixing enthalpy of III-V ternary alloys. Application of the model for analyzing both relaxed and strained layer growth on a substrate of different lattice constant is presented.

Published
2000

77. Growth and characterization of mid-infrared InGaAs/InAlAs strained triple-quantum-well light-emitting diodes grown on lattice-mismatched GaAs substrates

Author

Grietens, B., Hoof, C. Van, Daele, P. Van, and Borghs, G.

Subjects
Light-emitting diodes -- Research, Quantum wells -- Research, Gallium arsenide semiconductors -- Research, Physics
Abstract

Strained triple-quantum-well In0.9Ga0.1As/In0.8Al0.2As light-emitting diodes were grown on lattice-mismatched GaAs substrates by molecular-beam epitaxy. The diodes showed room temperature external electroluminescent light emission at 2.4 microns with efficiencies up to 0.000064 . The maximum output power at room temperature is 1.85 microW under pulsed operation at 150 mA. However, their optical performance were restricted by the nonradiative Shockley-Read-Hall recombination.

Published
1996

87. A Raman study of Au/Te/Au/GaAs (100) ohmic contacts

Author

Munder, H., Andrzejak, C., Berger, M.G., Luth, H., Borghs, G., Wuyts, K., Watte, J., and Silverans, R.E.

Subjects
Raman spectroscopy -- Usage, Electric contacts -- Research, Physics
Abstract

Micro Raman spectroscopy was used to analyze ohmic contacts brought about by high-energy pulsed laser beams alloying Au/Te/Au/n-GaAs. The results showed that there was no evidence for a doping of the contact region. A highly disordered GaAs surface layer was observed in the ohmic contacts. This was seen to be the case in both the furnace and laser annealed ohmic contacts.

Published
1992

89. Resonant Cavity LED’s

Author

Neve, H., primary, Blondelle, J., additional, Baets, R., additional, Demeester, P., additional, Daele, P., additional, and Borghs, G., additional

Published
1996
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91. Design of the tunnel contacts and the transport region of all-electrical spin-injection-detection devices

Author

Van Dorpe, P., Vanheertum, R., Boukari, H., Roy, Van W., and Borghs, G.

Subjects
Physics
Abstract

The optimal design of the doping level in a lateral spin-injection-detection device is discussed based on two-dimensional self-consistent simulations. The optimization is done in order to achieve an optimal tunnel barrier resistance and the doping of the spin-transport region is engineered to obtain optimal current distribution.

Published
2006

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